Zuo-Guang. Ye Advanced Dielectric Piezoelectric and Ferroelectric Materials: Synthesis, Characterisation and Applications
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Index1040
visualisation of nano–domain
structure 662
polarisation rotation vs polarisation
extension 313–17
principle of property enhancement
256–60, 261, 262
domain size (domain wall density)
278–86
domain structure
BiT and RE-substituted BiT crystals
1020–3
field-dependent in PMN-PT single
crystals 349–57
PMN–PT crystals 106, 108, 109
PSN crystals 198–9
PSN–PT crystals 198–200
symmetry in multi-domain single
crystals 236, 237–41
domain tip propagation (forward growth)
624, 625–6
domain wall dynamics 382
domain wall pinning model 495
domain walls 785
formation 616–18, 619
fragile 56–7
loss of shape stability 642–4
motion 381–2, 475
thickness 286–8, 761
domain width 543–4
equilibrium domain width 575, 577
domains
electrostatic domain-domain
interaction 656–7
ferroelectric nanostructures 543–5,
570–99
BTO ultra-thin films 577–80,
586–91
domain evolution under electric
field 580–91
methods 572–3
nanodots and nanowires 591–7
PZT ultra-thin films 573–7, 579–80,
581–6
thin films 573–91
toroidal and circular ordering
553–4
ferroelectric size effect 758–61
modulation to produce DSLs 935–41
strain effects on ferroelectric thin
films and domain formation
783
domes 604–5
doping
and flux growth 63
and growth striation technique 937–8
modification of PMN–PT single
crystals 134, 135–6, 150
tungstic oxide-doped PMN–PT
crystals 348–9
see also ion substitution
dot-type domains 653–4
dry etching 740–1
dynamic RAMs (DRAMs) 541, 561, 877
e-beam lithography 561, 562
edge nucleation 49–50
effective distribution coefficient 188
effective Hamiltonian approach 572–3
domains in ferroelectric thin films
573–91
domains in nanodots and nanowire
591–7
effective nonlinear optical coefficient 950
effective symmetries 236, 237–41
elastic compliance constants 244, 245–6,
248
PMN–PT crystals 17, 18–21, 22, 252,
253, 254–6, 258
PZN–PT single crystals 249–54, 257
elastic loss 478–9, 480–3
elastic stiffness constants 244, 245, 248
PMN–PT and PZN–PT single crystals
249–56, 257, 258
elastic strain energy 248
electric field 267
barium titanate crystals with
engineered domain
configurations
domain size dependence 278–80
patterning electrodes 291–2, 293–4
piezoelectric properties under high
electric field 272–5
piezoelectric properties under low
ac electric field 275–7
uniaxial stress field 297–9
coercive field 145, 147, 870, 875
depolarisation field see depolarisation
field
WPNL2204
Index 1041
domain evolution in ferroelectric
nanostructures 580–91
BTO ultra-thin films 586–91
PZT ultra-thin films 581–6
effects on MPB phases 429–30
effects on properties of piezoelectric
crystals 130–2, 133, 134
dielectric behaviour 84–5, 86
piezoelectric behaviour 85–7,
130–1, 133
energy analysis of field-induced phase
transitions 366–88
inducement of domain structures and
phase transitions in PMN-PT
single crystals 333–65
inducement of piezoelectric property
enhancement 322–6, 327
local field and nano- and micro-
domain engineering 633, 635,
648–9
polarisation rotation 307–12
electric field poling see field poling
electrically erasable read-only memories
(EEPROMs) 541, 561
electrocaloric cooling 555–7
electrodes
bottom electrode of pMUT 738–9
interface with ferroelectric
nanostructures 557–8
patterning electrodes 290–4, 300
perovskite artificial superlattices
987–91
electromagnetic bandgap structures
(EBGs) 530–1
electromagnetic (EM) field analysis
989–91
electromechanical coupling factors 110,
244–5, 246, 248, 480–1
barium titanate crystals with
engineered domain
configurations 275–7
bismuth-based perovskite single
crystals 143–5
BLSF 837–8
BITN and BITV 844, 845, 847
orientation effect 260, 262
PIMNT ceramics 209, 212, 213
Bridgman-grown crystals 219, 220,
221, 223, 224
PMN–PT crystals 17, 18–21, 22, 130,
131, 132, 133
complete set material properties
252, 253, 254–6, 258, 259
pMUT 749, 750
PSN–PT crystal 198
PYNT single crystal 139–41, 142
PZN–PT single crystals 249–54, 256,
257
SSCG single crystals 165, 167, 168,
170
electron beam writing 935, 939
electron cyclotron resonance (ECR) gun
975–6
electron emission 554–5
electron probe microanalyser (EPMA)
218–19
electronic band structure, BiT 1011–15
ab initio calculations 1015–17
effects of rare earth substitution
1027–8
electronic lone pair 397–9
electro-optic effect 631, 957–60
electrophoretic deposition 753
electrostatic domain-domain interaction
656–7
ellipsometry 983–4, 985
end-effect 13, 14
energy analysis of phase transitions
366–88
energy-based modelling 373–4
equations of energy equilibrium 374–5
future trends 382–3
irreversible work and hysteresis loss
378–81
work-energy analysis 376–8, 379, 380
see also effective Hamiltonian
approach; free energy
engineered domain configuration 266–
303, 770, 801
crystal structure and crystallographic
orientation dependence 269–77
piezoelectric properties under high
electric field 272–5
piezoelectric properties under low
ac electric field 275–7
domain size dependence 278–86
on electric field and temperature
278–80
WPNL2204
Index1042
piezoelectric property using 31
resonators 281–4
piezoelectric property using 33
resonators 284–6
effect on piezoelectric property 268–9,
270
future trends 300–1
history of 267–8
intrinsic and extrinsic effects 298–300
patterning electrode 290–4, 300
role of non-180° domain wall region
on piezoelectric properties
286–90
uniaxial stress field 294–8, 299, 300
epitaxial thin films
with extended structural defects
697–709
see also molecular beam epitaxy
(MBE)
equilibrium domain width 575, 577
equivalent circuits
parameters for pMUT 749–50, 751
piezoelectric resonance 486–7
error amplification factors 242, 243
error propagation 245–8
etching
DRIE 734
PZT thick film 740–2
ethylene glycol 866, 868, 876
exaggerated grain growth 159
extended structural defects 695–723
‘extender’ ferroelectrics 313–17
extensive losses 478–81
experimental example 481–2
physical meaning 482–4
external screening 634–5
extinction coefficient 984, 986
extrinsic contributions 262–3
extrinsic effects 298–300
Farnell’s theory 988–9, 990
fatigue 865
ferroelectric correlation length 910–11
ferroelectric-ferromagnetic materials 553
ferroelectric-gate field effect transistor
(FET) 549
ferroelectric nanostructures 541–69
base-metal-electrode capacitors 555
domains in see domains
electron emission 554–5
electrocaloric cooling for mainframes
and MEMs 555–7
focal-plane arrays 559
future trends 561–2
interfacial phenomena 557–8
magnetoelectrics and magnetoelectric
devices 551–3
phased-array radar 558
self-patterning 549–51, 562
superlattices 559
toroidal and circular ordering of
domains 553–4
ultra-thin single crystals 559–61
ferroelectric-relaxor crossover 906–12
ferroelectric size effect 757–62
ferroelectric superlattices 559
ferroelectric thin films see thin films
Fibonacci superlattices 946, 947, 951,
955–6
field cooling technique 61
field-cooling-zero-field-heating (FC-
ZFH) 335
field poling 333–65
and domain structures 349–57
effect on optical properties 357–9
Landau free energy analysis 359–62
preparation of DSLs 935, 939–41
and thermal stability 341–9
figures of merit 93, 94
pyroelectric properties of BLSF
ceramics 841, 842
film thickness
PZT ultra-thin films and domains 577,
585
size and distribution of nano-islands
602–4
fine pitch phased array transducers
115–16, 117–21
finger domains 642, 643–4, 646
finger width of interdigital electrodes
989–91
finite element analysis (FEA) 736
finite element code 383
first-principles-based methods 571–2
domains in ferroelectric
nanostructures 572–3
flap control 90–1
‘flash’ EEPROMs 541, 561
WPNL2204
Index 1043
flexoelectric effect 766
flextensional actuators 87
flow velocity gradient 801
fluorite 511–13
flux density 736
flux growth 38–72, 74, 135, 158, 166
commonly encountered problems 52–7
effect of flux composition 42–4
future trends 62–4
high PT content 47–52, 53
low PT content 44–7
PIMNT single crystals 212–15
properties of crystals 57–60
comparison with reported property
values 60–2
PSN and PSN-PT crystals 186–91
set-up and growth results 40–2
flux-to-solute ratio 44
flux trappings 55
focal-plane arrays 559
focused ion beams (FIBs) 547, 548, 560
forward growth (domain tip propagation)
624, 625–6
Fox-Scott mechanism 552
fractal patterns 653, 654–5
fragile domain walls 56–7
FRAMs 541, 542, 548–9, 560, 561, 877,
878
free energy
anisotropy of a free energy and
piezoelectric enhancement
317–26, 327
compositionally induced phase
transitions 322, 323
electric field and stress-induced
piezoelectric enhancement
322–6, 327
thermally induced phase transitions
319–21
electric field-induced domain
structures and phase transitions
in PMN-PT single crystals
359–62
Gibbs free energy 318–19, 375, 376,
377–8, 379, 381, 481
per unit surface of crystal 758
see also energy analysis of phase
transitions
frequency
dielectric properties and 83–4
high-frequency resonance in DSLs
954–7
multiplication of domain patterns
650–1, 652
frequency constant 223–4
full-set material properties 235–65
correlation between single domain and
multi-domain properties 256–60,
261, 262
PMN–PT multidomain crystals poled
along (001) 252, 253, 254–5
PZN–PT multidomain crystals
poled along (001) 248–54
poled along (011) 256, 257
technical challenges and
characterisation methods
237–48
effective symmetries of multi-
domain single crystal systems
236, 237–41
experimental procedure and error
analysis 244–8
factors affecting self-consistency
of full-set data 236, 242–4
fundamental lattice loss portion 475
gallium orthophosphate 147–9
generic phase diagram 130, 132
Gibbs free energy 318–19, 375, 376,
377–8, 379, 381, 481
Gibbs loss tangents 491, 492
Ginzburg-Landau theory 571
glasses 960–1
Goldschmidt tolerance factor 135–6
gradients, compositional 683–6, 687,
764–6
Graham-Charlier expansion 395–7, 398
grain boundaries 674
grain orientation 819, 869
BLSF 818–51
effects on electrical properties
823–47
by hot-forging 823
grain-oriented ceramics along
engineered domain direction
301
SBT from soft chemical methods
869–70, 872
WPNL2204
Index1044
grain orientation factor see degree of
orientation
grain size effects see size effects
green compacts 802, 803, 804
growth direction
control and flux growth 63
and property variations of PMN-PT
crystals 22, 24–5
growth striation technique 935, 936–8
half-loop dislocations 700, 701, 702, 703,
709
hard PZT 266, 491–5
origin 495–7
semi-hard 497–8, 499
harmonic imaging 116, 118, 120–1
harmonic imaging transducer 94–5
heat generation 379
loss mechanisms 488–90
Helmholtz free energy 481
heterogeneous thin films 764–7
heterolayered BST/BZN thin films
524–5
heterophase structure 657–8
heterostructures 934–5
hexagon domains 647–8
hexagonally poled LT (HPLT) crystal 953
high Curie temperature
high-performance piezoelectric
crystals 130–57
crystal growth 135
modification of single crystals
135–6
bismuth-based perovskite single
crystals 141–5, 146, 147, 148,
149, 174
future trends 150–1
non-perovskite single crystals
145–9
relaxor-PT systems with high
Curie temperature 137–41
MPB systems 467
PIMNT system see PIMNT system
high-energy ball milling 726
high-frequency linear array transducers
116, 118
high-frequency resonance, in DSLs
954–7
high-K dielectrics 531
high-power piezoelectric ceramics
491–500
high-power components 498–500
origin of 495–7
semi-hard PZT-based ceramics 497–8
very hard PZT-based ceramics 491–5
high-resolution transmission electron
microscopy (HRTEM)
analysis of defects in PZT single
crystalline films 702–7
nano-islands 611–12
hole conduction 1007, 1023–5
hopping dipoles model 523
hot-forging 801, 869
BLSF 818–51
hot pressing 452–3, 454, 455, 801
hydrolysis 853, 854
hydrothermal method 887
hysteresis
energy analysis of phase transitions
378–81
loss mechanisms see loss mechanisms
hysteresis loops 477
micro- and nano-domain engineering
658–60
nano-islands 614
PMN–PT 460, 461, 464, 465–6,
860–2
polarisation–electric field loops see
polarisation-electric field
hysteresis loops
PZT single crystalline films 716, 717,
718
SZO/STO artificial superlattices 999,
1000
impedance
ac impedance spectroscopy 1017–18
barium titanate crystals with
engineered domain
configurations 282, 283, 298
frequency dependence for BLSF
ceramics 839, 840
BITN and BITV 844–5, 846, 847
multilayer/composite single crystal
phased array 124, 125
multilayer single crystal probe 121,
122
pMUT 749, 750, 751
WPNL2204
Index 1045
imperfections see defects
impurity-induced clusters 910–11
in-line acoustic wave excitation 955–6
in-plane actuators 87
in-situ reflection high-energy electric
diffraction (RHEED) 973–4,
975, 977, 978
incommensurate systems 421
incomplete screening 636, 637, 640
ineffective screening 636
inelastic scattering 953
infrared dielectric response 516, 518–19
inkjet printers 562
instabilities
domain pattern-induced 263
free energy and piezoelectric
enhancement 317–26, 327
insulin inhaler 561
integrated circuits (IC) 531, 532, 533
intensive losses 476–8, 480–1
interdiffusion 674–86
in BST-based ceramic composites
675–83
concentration gradients in ceramics
683–6, 687
interdigital capacitor (IDC) 526, 527
interdigital electrodes 988–91, 992
interface control
Bridgman growth 13, 14
ferroelectric nanocomposites 670–91
concentration gradients 683–6,
687
future trends 686–7
improved in ceramic composites
677–9
improved in ceramics with
compositional gradient 684–6,
687
interface defects 671–4
interface engineering 618–20
interfacial phenomena 557–8
internal bias electric field 497
internal energy 374–5, 376, 377, 378,
379, 380–1
intrinsic effects 298–300
ion beam sputtering (IBS) 977–80
ion exchangeable layered perovskite
885–7
ion substitution
BZN-based pyrochlore ceramics
515–16, 517
lead-free relaxors
ferroelectric-relaxor crossover
906–12
relaxor behaviour and in barium
titanate-based ceramics
897–900, 901
modification of PMN-PT single
crystals 134, 135–6, 150
ionic complexes 49–50
ionic-type phononic crystal (ITPC) 957,
958
iron chromate 855
irreversible work 378–81
isolated domains, growth of 638–41
Kay–Dunn law 544
Kerr-form nonlinearity 943
Kittel’s law 543–4, 758–61, 785
Kolmogorov–Avrami (K–A) approach
660–1
KTP superlattices 938–41
lamellar domains 464, 465
Landau-Ginzburg-Devonshire (LGD)
theory 305
free energy and piezoelectric effect
enhancement 317–26, 327
Landau-type free energy analysis
359–62
langasite 145–7
lanthanum-substituted BiT see BLT
LAO substrates 601, 605–6
laser ablation 656, 696
laser MBE system 973–4
lattice distortions
BiT 1008–9
BLT and domain structure 1022–3
perovskite artificial lattices 980–3
lattice mismatch 605–7
lattice relaxation 995–6
lattice softening 770, 775–6
layered perovskite K
2
NbO
3
F 884–95
potassium niobate nanoparticles
885–9, 890, 891
conversion to nanosheets in water
887–8
ion exchangeability 886–7
WPNL2204
Index1046
re-stacking of nanosheets 888–9,
890, 891
potassium niobate thin film 889–94
lead-free materials 328, 467, 848–9, 884
lead-free relaxors 896–929
ceramics containing bismuth 918–24,
924
perovskite type 918–23
TTB type 923–4
derived from barium titanate 897–906,
924
relations between relaxor
behaviour and ionic
substitutions in solid solutions
897–900, 901
relaxor characteristics in solid
solutions 900–2
relaxor compositions in ternary
systems 902–4, 905, 906
X-ray diffraction and Raman
studies 904–6
ferroelectric-relaxor crossover 906–12
perovskite-type relaxor not derived
from barium titanate 906
with tetragonal bronze structure
912–17, 923–4
lead magnesium niobate see PMN
lead oxides
chemical behaviour 8–9, 10
flux growth 40, 42–4
lead titanate (PT or PTO) 333
electric field and stress-induced
enhancement of piezoelectric
properties 324–6, 327
nano-islands 602, 603–4
polarisation rotation and anisotropy
factors 314–16
PT-rich surface layer in flux growth
56–7
PT/STO system 616
single crystalline films free from
extended structural defects
709–14, 715
thin films and strain effects 781–2,
783
lead zinc niobate-lead titanate see
PZN–PT
lead zirconate titanate see PZT
leakage current 558
BiT crystals 1006–7, 1023–4
BTO/STO superlattices 987–8
density for thick films 733
RE-substituted BiT crystals 1024–5
light deflection at domain boundaries 631
linear electro-optic effect 631, 957–60
lines 653, 654
lithium niobate (LN) 145, 266
nano- and micro-domain engineering
in single crystals 622–69
superlattices 559, 936–42
lithium tantalate (LT) 266
nano- and micro-domain engineering
in single crystals 622–69
superlattices 936, 938–41
lithographic patterning 623
LN see lithium niobate
local field 633, 635
self-assembled nanoscale domain
structure 648–9
lone pair, electronic 397–9
loss anisotropy 490–1, 492, 493
loss mechanisms 475–502
experimental example 481–2
future trends 501
heat generation in piezoelectrics
488–90
high-power piezoelectric ceramics
491–6
origin of 495–8
high-power piezoelectric components
498–500
physical meaning of extensive losses
482–4
piezoelectric resonance 484–8
losses as a function of vibration
velocity 487–8
theoretical formulas 476–81
see also dielectric losses
low-symmetry ferroelectric phases
771–6
low-temperature co-fired ceramic (LTCC)
devices 503–4, 529
LT see lithium tantalate
macroscopic polarisation 591–2, 594–5
magnesium oxide substrates 601, 605,
606, 607–8
magnetoelectric composite 545, 547
WPNL2204
Index 1047
magnetoelectrics/magnetoelectric devices
551–3, 562
mainframe computers 555–7
martensitic transformation 421
Maxwell-Wagner effect 764, 765
maze domain structure 661, 662
mechanical quality factor 475, 484
BLSF 839
high-power piezoelectric ceramics
494, 495–6
losses at a piezoelectric resonance
484, 486, 487–8
mechanical softening 24
mechanochemical activation/
mechanosynthesis 452–3, 454,
455
medical nanostructure devices 561–2
medical ultrasonic transducers 101–29,
227–8
commercialisation of single crystal
transducers 112–21
future for single crystals 121–5, 126
future trends 125–6
piezoelectric single crystals 92–5,
102–7
characterisation 105–7, 108, 109,
110, 111
crystal growth 102–5
PIMNT crystals 222–5, 227–8
single crystals vs conventional PZT
ceramics 107–12, 113
melt growth 61–2
melting behaviour 511–13
merging (coalescence of domains) 624,
625, 626
domain shape evolution during 641–2,
643
metal alkoxides 853–4
metal–insulator–metal (MIM) thin film
capacitors 531
metal–oxygen–metal (M–O–M) networks
853–4
(1-x)PMN-xPT using THOME 863–4
methanol 866, 867
2-methoxyethanol 865
microcracking 351, 352, 354, 355, 357
microelectromechanical systems (MEMS)
electrocaloric cooling 555–7
piezoelectric thick films for 724–55
soft chemical methods and 877–8
microfluidic tranport 561–2
micromechanics models 383
microstructure
grain orientation and 823–5
loss portion 475
spin-coated thick films 729–31
microwaves
applications of BZN-based
pyrochlores 525–31
dielectric response of BZN-based
pyrochlores 516, 518–19
tunable microwave devices 526–7,
681–3
misfit dislocations
critical thickness for PTO films 710
nano-islands 611–12
and domain wall formation
616–18, 619
impact on ferroelectric switching
614–16
PZT single crystalline films 695,
697–8, 703
see also dislocations
mode coupling 244
modelling of MPB phase diagrams 421–5
molecular beam epitaxy (MBE)
laser MBE system 973–4
reactive MBE system 974–7, 978, 980
molten salt synthesis 801–2
monoclinic phases 339
adaptive phase 420–1
BZN-based pyrochlore and
zirconolite-like structure 507,
508
melting behaviour 511–13
phase formation 509–11, 512
phase transition and phase
relations 513–14
low-symmetry phases in ferroelectric
thin films 771–6
PMN-PT 415, 451
polarisation rotation and 305–12,
412–20
PSN-PT 178, 180, 182–3, 184,
417–20
monodomains 582, 585, 590–1
morphotropic phase boundary (MPB)
130, 132, 173–4, 180, 181, 207
WPNL2204
Index1048
compositionally induced phase
transitions 322, 323
ferroelectric thin films 767–9
MPB systems 391–446
CIRs 425–9
concentration evolution 438–40
future trends 432–40
modelling of MPB phase diagrams
421–5
monoclinic phase as adaptive
phase 420–1
polarisation rotation via
monoclinic phase 412–20
stability of MPB phases under
external and internal fields
429–32, 433, 434
substitution of titanium 412–29
PIMNT 211
PMN–PT 362, 451, 855–6
PSN–PT 176, 201
morphotropic phase diagram
182–4
morphotropic phase region (MPR)
438–40
morphotropic phase transition
temperature 130, 132, 173–4,
207
PIMNT 215, 221–2
PSN–PT 183–4
MRAMs 548–9, 561
multi-crucible Bridgman growth system
9–12, 30
multi-domain single crystal systems
235–65
correlation between single domain and
multi-domain properties 256–60,
261, 262
effective symmetries 237–41
PMN–PT crystals poled along (001)
252, 253, 254–5
PZN–PT crystals
poled along (001) 248–54
poled along (011) 256, 257
multi-field-induced phase transitions
368–73
multilayer ceramic actuators (MLCA)
447
multilayer ceramic capacitors (MLCC)
447, 503, 504, 686, 879
multilayer copper-embedded transformers
498–500
multilayer/polymer composite single
crystal phased array 123–5, 126
multilayer/polymer composite transducer
110
multilayer single crystal probe 121–3
multiple nucleation 53–4
multi-step deposition 607–9
nano-array of platinum nanowires/PZT
545–7, 561
nanodots 591–7
nano-islands 550–1, 600–21
future trends 618–20
physical properties 610–18
dislocations and domain wall
formation 616–18, 619
ferroelectric properties 613–14
growth mechanism 612–13
misfit dislocations and ferroelectric
switching 614–16
structural investigation 610–12
preparation 601–10
control of size and distribution
602–4
effect of lattice mismatch 605–7
influence of crystallisation
temperature 604–5
multi-step deposition 607–9
registration 609–10
nanoparticles, potassium niobate 885–9,
890, 891
nano-powders 878–9
nanoscale domain arrays 645–6
nanosheets 884–95
preparation of nanoparticles from
885–9
conversion of K
2
NbO
3
F to 887–8
re-stacking 888–9, 890, 891
preparation of thin films 889–94
nano-spheres 550
nano-toroids 547–8
nano-trenches 561
nanotubes
carbon 545, 550, 562
ferroelectric 545, 546, 550
nano-twinning 775
nanowires 591–7
WPNL2204
Index 1049
nano-writing 545, 547
NBT 818, 820–1, 826
NCBT 821, 825, 826, 848
piezoelectric properties 837–9
pyroelectric properties 841–3
neodymium-substituted BiT see BNT
neutron diffraction 1015, 1016
niobate oxide systems 914–17
niobium-doped STO substrate 987–8
non-180° domain walls 286–90
non-conventional sintering 679–83
non-crystallographic crystal faces 45
nonlinear Bragg law 952
nonlinear parametric interactions 933–4,
942–53
optical frequency conversion
1D periodic DSL 944–5
1D quasi-periodic DSLs 945–52
2D DSLs 952–3
wave vector conservation 942–3
non-perovskite piezoelectric single
crystals 134, 145–9, 150
non-planar nanoferroelectrics 784
non-stoichiometric BZN-based
pyrochlores 507–9
non-volatile random access memories
(FRAMs) 541, 542, 548–9, 560,
561, 877, 878
nucleation 624–5, 632
artificially produced nucleation sites
638
elementary nucleation processes
632–8
flux growth 46, 49–50
multiple nucleation 53–4
side-wall nucleation 41, 54
nano- and micro-domain engineering
relaxors and polarisation
reversal 661
NXBT system 828
one-dimensional (1D) DSLs 943
periodic 944–5
quasi-periodic 945–52
optical beam control 961
optical constants 984–7
optical extinction angles 337–41
optical frequency conversion 933–4, 943,
944–53
in 1D quasi-periodic DSLs 945–52
in 2D DSLs 952–3
and optical parametric oscillation in
1D periodic DSL 944–5
optical parametric amplification (OPA)
934
optical parametric generation (OPG)
933–4
optical parametric oscillators (OPOs)
934, 944–5
optical transmission 357–8
optimisation of cut directions 25–30
organic thin-film transistors (OTFT) 531,
532, 533
orientation effect 256, 259–60, 261, 262
orientation factor see degree of
orientation
orthorhombic phase 307, 309, 310
out-of-phase boundaries (OPBs) 706
output sound pressure level (SPL) 745–7
overpoling 58, 59, 60, 61–2
oxide superlattices 971
see also perovskite artifical
superlattices
oxyborate crystals 149
oxyfluorides 917
oxygen deficiency 14–15
oxygen deficiency diffusion model 497
oxygen-titanium bond oscillations 910–11
parasitic crystals 41, 54
partial density of states (PDOS) 1013–15
partial dislocations 700, 702, 703
patterning electrodes 290–4, 300
PBN 818, 820
PBT 821
Pechini method 856–7
periodic DSLs 944–5
periodically poled crystals 559
perovskite artificial superlattices
971–1005
dielectric properties 987–1000
BTO/STO superlattices 991–8
electrodes and measuring 987–91
SZO/STO superlattices 998–1000
future trends 1001–2
lattice distortions 980–3
optical property 983–7
optical constants 984–7
WPNL2204