Zuo-Guang. Ye Advanced Dielectric Piezoelectric and Ferroelectric Materials: Synthesis, Characterisation and Applications
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Part III Morphotropic phase boundary and related
phenomena
14 From the structure of relaxors to the structure of
MPB systems 391
J-M KIAT and B DKHIL, Ecole Centrale Paris, France
14.1 Introduction 391
14.2 Historical context 392
14.3 Structure of archetypal relaxors PbMg
1/3
Nb
2/3
O
3
(PMN)
and PbSc
1/2
Nb
1/2
O
3
(PSN) 395
14.4 Towards the MPB: substitution of titanium 412
14.5 Stability of the MPB phases under external and internal
fields 429
14.6 Conclusions and future trends 432
14.7 Acknowledgements 440
14.8 References 440
15 Size effects on the macroscopic properties of the
relaxor ferroelectric Pb(Mg
1/3
Nb
2/3
)O
3
–PbTiO
3
solid
solution 447
M ALGUERÓ, J RICOTE, P RAMOS and R JIMÉNEZ, Instituto de Ciencia
de Materiales de Madrid (CSIC), Spain, J CARREAUD, J-M KIAT and
B DKHIL, Ecole Centrale Paris, France and J HOLC and M KOSEC,
Institute Jozef Stefan, Slovenia
15.1 Introduction 447
15.2 Size effects in ferroelectrics 448
15.3 The relaxor ferroelectric Pb(Mg
1/3
Nb
2/3
)O
3
–PbTiO
3
solid
solution 450
15.4 Processing of submicrometre- and nanostructured
Pb(Mg
1/3
Nb
2/3
)O
3
–PbTiO
3
ceramics 452
15.5 Size effects on the macroscopic properties of
0.8Pb(Mg
1/3
Nb
2/3
)O
3
–0.2PbTiO
3
453
15.6 Size effects on the macroscopic properties of
0.65Pb(Mg
1/3
Nb
2/3
)O
3
–0.35PbTiO
3
461
15.7 Final remarks and future trends 466
15.8 References 467
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Part IV High-power piezoelectric and microwave
dielectric materials
16 Loss mechanisms and high-power piezoelectric
components 475
K UCHINO, Pennsylvania State University and Micromechatronics
Inc., USA; J H ZHENG, Y GAO, S URAL, S-H PARK and
N BHATTACHARYA, Pennsylvania State University, USA and
S HIROSE, Yamagata University, Japan
16.1 Introduction 475
16.2 General consideration of loss and hysteresis in
piezoelectrics 476
16.3 Losses at a piezoelectric resonance 484
16.4 Heat generation in piezoelectrics 488
16.5 Loss anisotropy 490
16.6 High-power piezoelectric ceramics 491
16.7 High-power piezoelectric components 498
16.8 Summary and conclusions 500
16.9 Future trends 501
16.10 Acknowledgement 501
16.11 References 501
17 Bismuth-based pyrochlore dielectric ceramics for
microwave applications 503
HONG WANG and X YAO, Xi’an Jiaotong University, China
17.1 Introduction 503
17.2 Crystal structures in the BZN system 504
17.3 Phase equilibrium and phase relation of BZN pyrochlores 509
17.4 Dielectric properties of BZN pyrochlores 514
17.5 Potential RF and microwave applications 525
17.6 Summary and future trends 532
17.7 Acknowledgements 534
17.8 References 534
Part V Nanoscale piezo- and ferroelectrics
18 Ferroelectric nanostructures for device applications 541
J F SCOTT, Cambridge University, UK
18.1 Introduction 541
18.2 Ferroelectric nanostructures 542
18.3 Self-patterning 549
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18.4 Magnetoelectrics and magnetoelectric devices 551
18.5 Toroidal and circular ordering of ferroelectric domains in
ferroics 553
18.6 Electron emission from ferroelectrics 554
18.7 Base–metal–electrode capacitors 555
18.8 Electrocaloric cooling for mainframes and MEMs 555
18.9 Interfacial phenomena 557
18.10 Phased-array radar 558
18.11 Focal-plane arrays 559
18.12 Ferroelectric superlattices 559
18.13 Ultra-thin single crystals 559
18.14 Summary 560
18.15 Future trends 561
18.16 Further reading 563
18.17 References 563
19 Domains in ferroelectric nanostructures from first
principles 570
I A KORNEV, University of Arkansas, USA and Mads Clausen
Institute, University of Southern Denmark, Denmark and B-K LAI,
I N
AUMOV, I PONOMAREVA, H FU and L BELLAICHE, University of
Arkansas, USA
19.1 Introduction 570
19.2 Methods 572
19.3 Domains in ferroelectric thin films 573
19.4 Domains in one-dimensional and zero-dimensional
ferroelectrics 591
19.5 Conclusions 597
19.6 Acknowledgments 597
19.7 References 597
20 Nanosized ferroelectric crystals 600
I SZAFRANIAK-WIZA, Poznan University of Technology, Poland and
M ALEXE and D HESSE, Max Planck Institute of Microstructure
Physics, Germany
20.1 Introduction 600
20.2 Preparation of nano-islands 601
20.3 Physical properties of the nano-islands 610
20.4 Conclusions and future trends 618
20.5 Acknowledgments 620
20.6 References 620
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21 Nano- and micro-domain engineering in normal and
relaxor ferroelectrics 622
V Y SHUR, Ural State University, Russia
21.1 Introduction 622
21.2 Main experimental stages of domain structure evolution
during polarization reversal in normal ferroelectrics 624
21.3 Materials and experimental conditions 627
21.4 General consideration 631
21.5 Domain growth: from quasi-equilibrium to highly non-
equilibrium 638
21.6 Self-assembled nanoscale domain structures 645
21.7 Modern tricks in nanoscale domain engineering 649
21.8 Polarization reversal in relaxors 657
21.9 Conclusions and future trends 663
21.10 Acknowledgments 664
21.11 References 664
22 Interface control in 3D ferroelectric nano-composites 670
C ELISSALDE and M MAGLIONE, University of Bordeaux1, France
22.1 Introduction 670
22.2 Interface defects and dielectric properties of bulk
ferroelectric materials 671
22.3 Interdiffusion in bulk ceramics and composites 674
22.4 Summary and future trends 686
22.5 References 687
Part VI Piezo- and ferroelectric films 693
23 Single crystalline PZT films and the impact of extended
structural defects on the ferroelectric properties 695
I VREJOIU, D HESSE, and M ALEXE, Max Planck Institute of
Microstructure Physics, Germany
23.1 Introduction 695
23.2 Pulsed laser deposition of epitaxial ferroelectric oxide
thin films 696
23.3 Epitaxial ferroelectric oxide thin films and nanostructures
with extended structural defects 697
23.4 Single crystalline PbTiO
3
and PZT 20/80 films free from
extended structural defects 709
23.5 Comparison of ferroelectric properties of PZT 20/80 films
with and without extended structural defects 714
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23.6 Summary 717
23.7 Acknowledgments 719
23.8 References 719
24 Piezoelectric thick films for MEMS application 724
Z WANG, W ZHU and J MIAO, Nanyang Technological University,
Singapore
24.1 Introduction 724
24.2 A composite coating process for preparing thick film on
silicon wafer 725
24.3 Characterization of spin-coated thick films 729
24.4 Piezoelectric micromachined ultrasonic transducer
(pMUT) based on thick PZT film 733
24.5 Microfabrication of thick film pMUT 737
24.6 Performances of thick film pMUT 742
24.7 Summary 751
24.8 Future perspective 753
24.9 References 753
25 Symmetry engineering and size effects in
ferroelectric thin films 756
B NOHEDA, University of Groningen, The Netherlands and
G CATALAN, University of Cambridge, UK
25.1 Introduction 756
25.2 Size effects 757
25.3 Heterogeneous thin films: superlattices and gradients 764
25.4 Symmetry and ferroelectric properties: polarization
rotation and lattice softening 767
25.5 Strain effects on ferroelectric thin films 776
25.6 Conclusion and future trends 783
25.7 Further reading 785
25.8 Acknowledgements 786
25.9 References 786
Part VII Novel processing and new materials
26 Processing of textured piezoelectric and dielectric
perovskite-structured ceramics by the
reactive-templated grain growth method 799
T KIMURA, Keio University, Japan
26.1 Enhancement of piezoelectric properties of perovskite-
structured ceramics by texture formation 799
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26.2 Reactive-templated grain growth method 801
26.3 Selection of reactive templates 807
26.4 Factors determining texture development 809
26.5 Application to solid solutions 911
26.6 Conclusions and future trends 813
26.7 References 814
27 Grain orientation and electrical properties of bismuth
layer-structured ferroelectrics 818
T Takenaka, Tokyo University of Science, Japan
27.1 Introduction 818
27.2 Bismuth layer-structured ferroelectrics (BLSF) 819
27.3 Grain orientation and hot-forging (HF) method 822
27.4 Grain orientation effects on electrical properties 823
27.5 Conclusions and future trends 847
27.6 Acknowledgments 849
27.7 References 849
28 Novel solution routes to ferroelectrics and relaxors 852
K BABOORAM and Z-G YE, Simon Fraser University, Canada
28.1 Introduction 852
28.2 Soft chemical methods for the synthesis of mixed metal
oxides 853
28.3 Polyethylene glycol-based new sol–gel route to relaxor
ferroelectric solid solution (1–x)Pb(Mg
1/3
Nb
2/3
)O
3
−xPbTiO
3
(x = 0.1 and 0.35) 855
28.4 New soft chemical methods for the synthesis of
ferroelectric SrBi
2
Ta
2
O
9
865
28.5 Novel sol–gel route to ferroelectric Bi
4
Ti
3
O
12
and
Bi
4–x
La
x
Ti
3
O
12
ceramics 873
28.6 Future trends 876
28.7 Acknowledgments 879
28.8 References 879
29 Room temperature preparation of KNbO
3
nanoparticles and thin film from a perovskite
nanosheet 884
K TODA and M SAT O , Niigata University, Japan
29.1 Introduction 884
29.2 Mechanisms of generation of KNbO
3
nanoparticles 885
29.3 Fabrication of KNbO
3
thin film 889
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29.4 Conclusions and future trends 894
29.5 References 894
30 Lead-free relaxors 896
A SIMON and J RAVEZ, University of Bordeaux1, France
30.1 Introduction 896
30.2 Lead-free relaxor ceramics derived from BaTiO
3
897
30.3 Perovskite-type relaxor not derived from BaTiO
3
906
30.4 Crossover from a ferroelectric to a relaxor state 906
30.5 Lead-free relaxors with tetragonal bronze (TTB) structure 912
30.6 Ceramics containing bismuth 918
30.7 Conclusions 924
30.8 References 924
Part VIII Novel properties of ferroelectrics and related
materials
31 Novel physical effects in dielectric superlattices and
their applications 933
Y Q QIN and S N ZHU, Nanjing University, China
31.1 Introduction 933
31.2 Preparation of DSLs by modulation of ferroelectric
domains 935
31.3 Preparation of DSL by the photorefractive effect 941
31.4 Application of DSLs in nonlinear parametric interactions 942
31.5 Application of DSLs in acoustics 953
31.6 Application of DSLs in electro-optic technology 957
31.7 Outlook 960
31.8 Acknowledgments 961
31.9 References and further reading
32 Dielectric and optical properties of perovskite
artificial superlattices 971
T TSURUMI and T HARIGAI, Tokyo Institute of Technology, Japan
32.1 Introduction 971
32.2 Preparation of artificial superlattices 973
32.3 Lattice distortions in artificial superlattices 980
32.4 Optical property of artificial superlattices 983
32.5 Dielectric properties of artificial superlattices 987
32.6 Conclusions and future trends 1001
32.7 References 1002
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33 Crystal structure and defect control in
Bi
4
Ti
3
O
12
-based layered ferroelectric single
crystals 1006
Y NOGUCHI and M MIYAYAMA, The University of Tokyo, Japan
33.1 Introduction 1006
33.2 Crystal structure 1008
33.3 Electronic band structure and density of states (DOS) 1011
33.4 Defect structure 1015
33.5 Domain structure 1020
33.6 Leakage current 1023
33.7 Polarization properties 1025
33.8 Effects of La and Nd substitutions on the electronic band
structure and chemical bonding 1027
33.9 Summary 1028
33.10 Future trends 1029
33.11 References 1030
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Contributor contact details
Editor
Zuo-Guang Ye
Department of Chemistry
Simon Fraser University
8888 University Drive
Burnaby
BC, V5A 1S6
Canada
E-mail: zye@sfu.ca
Chapter 1
Pengdi Han*, Jian Tian and
Weiling Yan
H. C. Materials Corporation
479 Quadrangle Drive
Suite-E
Bolingbrook, IL 60440
USA
E-mail: p-han1@uiuc.edu;
han@hcmat.com
Chapter 2
L-C Lim
Department of Mechanical
Engineering
National University of Singapore
9 Engineering Drive
Singapore 117576
and
Microfine Materials Technologies
Pte Ltd
10 Bukit Batok Crescent
#06-02 The Spire
Singapore 658079
E-mail: mpelimlc@nus.edu.sg
Chapter 3
Wesley S Hackenberger*, Jun Luo,
Xiaoning Jiang, Kevin A Snook
and P W Rehrig
TRS Technologies Inc.
2820 E. College Avenue
State College, PA 16801
USA
(* = main contact)
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