Zuo-Guang. Ye Advanced Dielectric Piezoelectric and Ferroelectric Materials: Synthesis, Characterisation and Applications
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Handbook of dielectric, piezoelectric and ferroelectric materials1030
much lower than that of crystal growth (~ 1200°C), the extremely high
surface energy of the films enhances defect formation in the films. A similar
mechanism of the defect formation for the crystals could be used to control
the vacancy formation in the films. A high
P
O
2
atmosphere suppresses the
defect formation at high temperatures, while a moderate
P
O
2
atmosphere is
preferable for achieving a low leakage current during subsequent cooling or
annealing to avoid the incorporation of oxygen into the lattice that creates
electron hole (carrier of the leakage current). Therefore, sintering under a
high
P
O
2
atmosphere and subsequent annealing under a low
P
O
2
atmosphere
would provide high-quality Bi
4
Ti
3
O
12
films and crystals with a superior
polarization-switching property as well as a low leakage current.
33.11 References
1. Wu, S Y, ‘Optical switching characteristics of epitaxial bismuth titanate films for
matrix-addressed displays’, Ferroelectrics, 1976 10 (1–4) 209–13.
2. Aurivillius, B, ‘Mixed bismuth oxide with layer lattices II. Structure of Bi
4
Ti
3
O
12
’,
Ark Kemi, 1949 1 (58) 499–512.
3. Subbarao, E C, ‘Ferroelectricity in Bi
4
Ti
3
O
12
and its solid solutions’, Phys Rev, 1961
122 (3) 804–7.
4. Cummins, S E, ‘Electrical and optical properties of ferroelectric Bi
4
Ti
3
O
12
single
crystals’, J Appl Phys, 1968 39 (5) 2268–74.
5. Irie, H, ‘Structure dependence of ferroelectric properties of bismuth layer-structured
ferroelectric single crystals’, J Appl Phys, 2001 90 (8) 4089–94.
6. Joshi, P C, ‘Structural and optical-properties of ferroelectric Bi
4
Ti
3
O
12
thin-films by
sol–gel technique’, Appl Phys Lett, 1991 59 (19) 2389–90.
7. Jo, W, ‘Structural and electrooptic properties of laser ablated Bi
4
Ti
3
O
12
Thin-Films
on SrTiO
3
(100) and SrTiO
3
(110)’, Appl Phys Lett, 1992 61 (13) 1516–18.
8. Rae, A D, et al. ‘Structure refinement of commensurately modulated bismuth titanate,
Bi
4
Ti
3
O
12
’, Acta Crystallogr, Sect B, 1990 46 474–87.
9. Shimakawa, Y, ‘Crystal structures and ferroelectric properties of SrBi
2
Ta
2
O
9
and
Sr
0.8
Bi
2.2
Ta
2
O
9
’, Appl Phys Lett, 1999 74 (13) 1904–6.
10. Soga, M, ‘Domain structure and polarization properties of lanthanum-substituted
bismuth titanate single crystals’, Appl Phys Lett, 2004 84 (1) 100–102.
11. Noguchi, Y J, ‘Defect control for large remanent polarization in bismuth titanate
ferroelectrics doping effect of higher-valent cations’, Jpn J Appl Phys, 2000 39
(12B) L1259–L62.
12. Noguchi, Y, ‘Oxygen stability and leakage current mechanism in ferroelectric La-
substituted Bi
4
Ti
3
O
12
single crystals’, Jpn J Appl Phys, 2005 44 (9B) 6998–7002.
13. Park, C H, ‘First-principles study of the oxygen-vacancy in ferroelectric perovskites’,
J Korean Phys Soc, 1998 32 S143–5.
14. Chan, N H, ‘Defect chemistry of BaTiO
3
’, J Electrochem Soc, 1976 123 (10) 1584–
5.
15. Chan, N-H, ‘Nonstoichiometry in undoped BaTiO
3
’, J Am Ceram Soc, 1981 64 (9)
556–62.
16. Raymond, M V, ‘Defect chemistry and transport properties of Pb(Zr
1/2
Ti
1/2
)O
3
’,
Integrated Ferroelectr, 1994 4 145–54.
WPNL2204
Crystal structure and defect control 1031
17. Takahashi, M, et al. ‘Electrical conduction mechanism in Bi
4
Ti
3
O
12
single crystal’,
Jpn J Appl Phys, 2002 41 (11B) 7053–6.
18. Takahashi, M, et al. ‘Electrical conduction properties of La-substituted bismuth
titanate single crystals’, J Ceram Process Res, 2005 6 (4) 281–5.
19. Noguchi, Y, et al. ‘Impact of defect control on the polarization properties in Bi
4
Ti
3
O
12
ferroelectric single crystals’, Jpn J Appl Phys, 2005 44 (16–19) L570–2.
20. Soga, M, ‘Domain structure and polarization properties of lanthanum-substituted
bismuth titanate single crystals’, Appl Phys Lett, 2004 84 (1) 100–2.
21. Fujisaki, Y, ‘Significant enhancement of Bi
3.45
La
0.75
Ti
3
O
12
ferroelectricity derived
by sol-gel method’, Jpn J Appl Phys, 2003 42 (3B) L267–9.
22. Watanabe, T, ‘Effect of cosubstitution of La and V in Bi
4
Ti
3
O
12
thin films on the
low-temperature deposition’, Appl Phys Lett, 2002 80 (1) 100–2.
23. Uchida, H, ‘Approach for enhanced polarization of polycrystalline bismuth titanate
films by Nd
3+
/V
5+
cosubstitution’, Appl Phys Lett, 2002 81 (12) 2229–31.
24. Kojima, T, ‘Large remanent polarization of (Bi,Nd)
4
Ti
3
O
12
epitaxial thin films grown
by metalorganic chemical vapor deposition’, Appl Phys Lett, 2002 80 (15) 2746–8.
25. Kim, S H, ‘Ferroelectric properties of Ta- and Mn-doped Bi
3.3
La
1.0
Ti
3
O
12
thin films’,
Ferroelectrics, 2002 271 1757–62.
26. Kang, B S, ‘Retention characteristics of Bi
3.25
La
0.75
Ti
3
O
12
thin films’, Jpn J Appl
Phys, 2002 41 (8) 5281–3.
27. Hayashi, T, ‘Preparation and properties of Bi
4–x
La
x
Ti
3
O
12
ferroelectric thin films
using excimer UV irradiation’, Jpn J Appl Phys, 2002 41 (11B) 6814–19.
28. Tokumitsu, E, ‘Fabrication and characterization of metal-ferroelectric–metal–insulator–
semiconductor (MFMIS) structures using ferroelectric (Bi,La)
4
Ti
3
O
12
films’, Jpn J
Appl Phys, 2001 40 (9B) 5576–9.
29. Hou, Y, ‘Bi
3.25
La
0.75
Ti
3
O
12
thin films prepared on Si (100) by metalorganic
decomposition method’, Appl Phys Lett, 2001 78 (12) 1733–5.
30. Ding, Y, et al. ‘Why lanthanum-substituted bismuth titanate becomes fatigue free in
a ferroelectric capacitor with platinum electrodes’, Appl Phys Lett, 2001 78 (26)
4175–7.
31. Chon, U, ‘Degradation mechanism of ferroelectric properties in Pt/Bi
4–x
La
x
Ti
3
O
12
/
Pt capacitors during forming gas annealing’, Appl Phys Lett, 2001 79 (15) 2450–52.
32. Park, B H, ‘Lanthanum-substituted bismuth titanate for use in non-volatile memories’,
Nature, 1999 401 (6754) 682–4.
33. Osada, M, ‘Cation distribution and structural instability in Bi
4–x
La
x
Ti
3
O
12
’, Jpn J
Appl Phys, 2001 40 (9B) 5572–5.
34. Shimakawa, Y, et al. ‘Crystal and electronic structures of Bi
4–x
La
x
Ti
3
O
12
ferroelectric
materials’, Appl Phys Lett, 2001 79 (17) 2791–3.
35. Goto, T, ‘Effects of Nd substitution on the polarization properties and electronic
structures of bismuth titanate single crystals’, Mater Res Bull, 2005 40 (6) 1044–51.
36. Newnham, R E, ‘Structural basis of ferroelectricity in bismuth titanate family’,
Mater Res Bull, 1971 6 (10) 1029–39.
37. Dorrian, J F, ‘Crystal-structure of Bi
4
Ti
3
O
12
’, Ferroelectrics, 1971 3 (1) 17–27.
38. Withers, R L, ‘The crystal-chemistry underlying ferroelectricity in Bi
4
Ti
3
O
12
,
Bi
3
TiNbO
9
, and Bi
2
WO
6
’, J Solid State Chem, 1991 94 (2) 404–17.
39. Zhong, W, ‘Giant LO-TO splitting in perovskite ferroelectrics’, Phys Rev Lett, 1994
72 (22) 3618–21.
40. Brown, I D, ‘Bond-valence parameters obtained from a systematic analysis of the
inorganic crystal-structure database’, Acta Crystallogr, Sect B, 1985 41 (Aug) 244–7.
WPNL2204
Handbook of dielectric, piezoelectric and ferroelectric materials1032
41. Okeeffe., M, ‘The prediction and interpretation of bond lengths in crystals’, Structure
and Bonding, 1989 71 161–90.
42. Thompson, J G, ‘Revised structure of Bi
3
TiNbO
9
’, Acta Crystallogr, Sect B, 1991 47
174–80.
43. Hervoches, C H, ‘Structural behavior of the four-layer Aurivillius-phase ferroelectrics
SrBi
4
Ti
4
O
15
and Bi
5
Ti
3
FeO
l5
’, J Solid State Chem, 2002 164 (2) 280–91.
44. Frit, B, ‘The crystal-chemistry and dielectric-properties of the Aurivillius family of
complex bismuth oxides with perovskite-like layered structures’, J Alloys Compd,
1992 188 (1–2) 27–35.
45. Merz, W J, ‘Domain formation and domain wall motions in ferroelectric BaTiO
3
single crystals’, Phys Rev, 1954 95 (3) 690–98.
46. Goo, E K W, ‘Transmission Electron-microscopy of Pb(Zr
0.52
Ti
0.48
)O
3
’, J Am Ceram
Soc, 1981 64 (9) 517–19.
47. Li, Y L, et al. ‘Effect of electrical boundary conditions on ferroelectric domain
structures in thin films’, Appl Phys Lett, 2002 81 (3) 427–9.
48. Ding, Y, ‘Ferroelectric switching mechanism in SrBi
2
Ta
2
O
9
’, Appl Phys Lett, 2001
79 (7) 1015–17.
49. Kijima, T, ‘Effect of high-pressure oxygen annealing on Bi
2
SiO
5
-added ferroelectric
thin films’, Jpn J Appl Phys, 2002 41 (10B) L1164–6.
50. Noguchi, Y, ‘Large remanent polarization of vanadium-doped Bi
4
Ti
3
O
12
’, Appl Phys
Lett, 2001 78 (13) 1903–5.
51. Cohen, R E, ‘Origin of ferroelectricity in perovskite oxides’, Nature, 1992 358 136–
8.
52. Watson, G W, ‘Ab initio calculation of the origin of the distortion of α-PbO’, Phys
Rev B, 1999 59 (13) 8481–6.
53. Noguchi, Y, ‘Chemical bonding and electronic states in α-PbO: analysis by an ab
initio band calculation’, J Ceram Soc Jpn, 2004 112 (1) 50–56.
54. Iniguez, J, ‘First-principles study of (BiScO
3
)(1–x)–(PbTiO
3
)(x) piezoelectric alloys’,
Phys Rev B, 2003 67 (22) 224107.
WPNL2204
Index
(001) poling 106–7, 110, 369, 373
engineered domain configuration in
barium titanate 271, 272–3,
275–7
PMN–PT crystals 252, 253, 254–5
Bridgman growth 26, 32, 33, 35
PZN–PT crystals 248–54
(011) poling
PMN–PT crystals 26–30, 32, 33–4,
35
PZN–PT crystals 256, 257
(110) poling 370–3
(111) poling
engineered domain configuration in
barium titanate 270–1, 273–4
PMN-PT crystals 258, 259
Bridgman growth 26, 27, 35
ab initio band structure calculations
1015–17
abnormal grain growth (AGG) 159
ac impedance spectroscopy 1017–18
accommodation region 436
acoustics 953–7
high-frequency resonance in DSLs
954–7
polariton excitation in DSLs 957, 958
actuators 87–92
for cryogenic actuation 91–2
for deformable mirrors 88–90
MLCA 447
for rotorcraft flap control 90–1
adaptive phase model 420–1, 775
admittance 485–6, 991, 992
BTO/STO superlattices 991–2, 994
amplitude squeezing 960
anisotropic diffuse scattering 408, 409–10,
411
anisotropy
dielectric and piezoelectric anisotropy
factors 314–16
and domain engineering 367–8
ferroelectric single crystals 367–8
of a free energy and piezoelectric
enhancement 317–26, 327
loss anisotropy 490–1, 492, 493
annealing 612–13
and leakage current of BiT crystals
1023–5
and polarisation properties of BiT
crystals 1025–6
antennas 527–9
antiphase domain boundary (ADB)
1022–3
artificial superlattices 559, 764, 765, 934,
971
dielectric see dielectric superlattices
perovskite see perovskite artificial
superlattices
artificially produced nucleation sites
638
atomic force microscopy (AFM)
nano-writing 545, 547
single crystalline films without
structural defects 711–13
backswitched poling 649–52, 653
backswitching, spontaneous 624, 625,
626, 640, 641, 644
band structure see electronic band
structure
bandwidth 94
1033
WPNL2204
Index1034
barium-sodium niobate oxide system 914,
915, 916
barium titanate (BT or BTO) 205, 807–8,
879
BTO/STO artificial superlattices see
BTO/STO artificial
superlattices
concentration gradient 683–4, 685
improved control of interfaces
684–6, 687
engineered domain configuration 267,
269–300
(001) oriented single crystals 271,
272–3, 275–7
(111) oriented single crystals 270–1,
273–4
crystal structure and
crystallographic orientation
dependence 269–77
domain size dependence on electric
field and temperature 278–80
domain size dependence of
piezoelectric property using 31
resonators 281–4
domain size dependence of
piezoelectric property using 33
resonators 284–6
future trends 300–1
intrinsic and extrinsic effects
298–300
patterning electrode 290–4, 300
piezoelectric properties measured
under high electric field 272–5
piezoelectric properties measured
under low ac electric field
275–7
role of non–180° domain wall
region 286–90
uniaxial stress field 294–8, 299, 300
lead-free relaxor ceramics derived
from 897–906, 924
ferroelectric-relaxor crossover
906–12
nanopowders 879
polarisation rotation and anisotropy
factors 314–16
size effects 448–9
thermally induced phase transitions
and ‘rotator’ character 319–21
thin films
domain evolution under electric
field 586–91
domains in ultra-thin films 577–80
fully strained 779–81
strain relaxation and domain
formation 783
under tensile strain 781–2
barium titanate–barium zirconate–barium
lithium fluoride system 903,
904
barium titanate–barium zirconate–calcium
titanate system 902–3, 904, 905
barium titanate–potassium niobate–
calcium titanate system 903,
904, 905, 906
base–metal–electrode capacitors 555
beam control, optical 961
benders 87
birefringence 358–9
birefringent domains 198, 199, 200
bismuth
bismuth-based perovskite single
crystals see BSPT
bismuth-based pyrochlore ceramics
see BZN-based pyrochlore
ceramics
lead-free relaxors containing 918–24
perovskite type 918–23
TTB type 923–4
bismuth ferrate 778–9
bismuth lanthanum titanate see BLT
bismuth layer-structured ferroelectrics
(BLSF) 808–9, 818–51, 865,
869
future trends 847–9
grain orientation effects on electrical
properties 823–47
dielectric properties 825–8, 829
hysteresis loops and remanent
polarisation 833–6
microstructure 823–5
piezoelectric properties 836–41
pyroelectric properties 841–3
recent progress on bismuth
titanate–based system 843–7
resistivities 828–33
grain orientation and hot-forging
822–3
WPNL2204
Index 1035
phase relation 821–2
bismuth titanate (BiT or BIT) 543, 807,
818, 820, 821, 822, 1006–32
crystal structure 1006, 1007, 1008–11
bond valence analysis and role of
bismuth in ferroelectric phase
transition 1009–11, 1012
ferroelectric distortion and
spontaneous polarisation
1008–9
defect structure 1015–20
ab initio band structure
calculations 1015–17
defect-formation mechanism
1018–20
electrical conductivity by ac
impedance spectroscopy
1017–18
neutron diffraction 1015, 1016
domain structure 1020–3
effects of rare earth substitution on
band structure and chemical
bonding 1027–8
electronic band structure and density
of states 1011–15
future trends 1029–30
grain orientation effects on electrical
properties
crystalline structure 824–5
recent progress 843–7
resistivity 830–1, 832–3
leakage current 1023–5
novel sol-gel route to 873–6, 877
polarisation properties 1025–6
BITN ceramics 843–7
BITV ceramics 843–7
blisters 738–9
BLT (bismuth lanthanum titanate) 1007,
1029
band structure and chemical bonding
1027–8
defect structure 1016–18
domain structure 1021–3
leakage current 1024–5
novel sol-gel route to 875–6, 877, 878
polarisation properties 1025–6
BNKT 803–7, 810, 811, 812
BNT (neodymium-substituted BiT) 1007,
1014, 1015, 1029
band structure and chemical bonding
1027–8
bond valence analysis 1009–11, 1012
boron oxides 40, 42–4, 48–50, 52, 53,
189–90
Bragg condition 942–3
branching 655
Bridgman growth 4–37, 97, 104–5, 135,
158, 166
apparatus 9–12
data for selection of crystals 31–5
future trends 30–1
imperfections 13–15
interface control 13
optimisation of cut directions 25–30
phase equilibrium 6
PIMNT and PSMNT single crystals
216–26
platinum crucible leakage and lead
oxide chemistry 6–9
procedures 12–13
property characterisation 15–25
interrelationship of properties 21–5
property variations 17–21
recent progress for PMN–PT crystal
74–81
BSPT 425
high Curie temperature crystals 134,
141–5, 146, 148, 149, 150, 174
BST
BST/BZN thin films 524–5
BST/MgO and BST/MgTiO
3
ceramic
composites 675–83
thin films 521–3
BTN 820
BTO/STO artificial superlattices 559,
971–3, 1001
dielectric permittivity 991–5
mechanism of permittivity
enhancement 995–6
temperature dependence of
permittivity 997–8
lattice distortions 980–3
optical constants 984–7
reactive MBE system 976–7, 978
BTT 821, 822
bubble domains 582, 584–5, 586, 590
buffer layer 738–9
bulk screening 635, 659–60
WPNL2204
Index1036
butterfly-type diffuse scattering 408,
409–10, 411
BZN-based pyrochlore ceramics 503–38
crystal structures in BZN system
504–9
cubic pyrochlore 505–7
monoclinic zirconolite-like
structure 507, 508
non-stoichiometric pyrochlores and
local crystal chemistry 507–9
dielectric properties 514–25
basic properties 514–15
dielectric relaxation 520–1
dielectric tunability in thin films
521–5
effect of ion substitution 515–16,
517
microwave and infrared dielectric
response 516, 518–19
future trends 531–3
phase equilibrium and phase relation
509–14
melting behaviour 511–13
phase diagram 509, 510
phase formation of cubic and
monoclinic pyrochlores 509–11,
512
phase transition and phase relation
513–14
potential RF and microwave
applications 525–31
BZT SSCG 159, 160, 162–3, 170
dielectric and piezoelectric properties
163–5
CaCu
3
Ti
4
O
12
674
calcined compact 803, 804, 805
capacitive microfabricated ultrasound
transducer (cMUT) 101, 125–6
capacitors
base–metal–electrode 555
BZN and tunable capacitors 523, 525,
526, 527
MLCC 447, 503, 504, 686, 879
nano-capacitors on carbon nanotubes
545
carbon nanotubes 545, 550
with piezoelectric/pyroelectric PZT
tips 562
cascaded nonlinearity 960
charge coefficient 93, 94
charge screening 634–5, 761–2
charge-voltage curves 992, 993, 999,
1000
charged boundaries 672–4
charged defects 671–4
chemical bonding 1027–8
chemical diffusion 935, 938–9
chemical inhomogeneity regions (CIRs)
425–9, 436, 438, 450–1
chemical solution deposition (CSD) 601
chemically ordered regions (CORs) 394,
403–8, 425, 438, 450–1
interaction with PNRs 408–12
see also chemical inhomogeneity
regions (CIRs)
chirped-periodic DSL 960
circular domains 553–4
cluster nucleation 49
coalescence of residual domains see
merging
cobaltous ferrite magneto-electric
composite 545, 547
coercive field 145, 147
SBT from soft chemical methods 870,
875
complete screening 636, 640
component count ratio 532
composite coating process 724, 725–9
composite films see thick films
compositional gradients 764–6
interface control 683–6, 687
compositional segregation 40, 44, 75–7,
81, 193–4
compositional variation
compositionally induced phase
transitions 322, 323
PIMNT crystal 218–19
PMN-PT crystals 106
field dependent domain structures
349–57
field poling effect on optical
properties 357–9
thermal stability and field poling
341–9
PSMNT crystal 219
self-consistency of full-set data
242–4
WPNL2204
Index 1037
size effects on macroscopic properties
of PMN-PT 453–66
compound semiconductor superlattices
971
compressive strain
domains in nanodots and nanowires
593–7
domains in PZT ultra-thin films 574,
575, 577–9, 585
compressive stresses 312
concentration profile 105–6
conductivity 475, 830–2, 1017–18
see also resistivity
congruent LN (CLN) 627–8
congruent LT (CLT) 627–8
conical second-harmonic (SH) beam 953
constitutive models 383
continuous phase transitions 366
conversion efficiency 949–50
cooling treatments 917
copper-electrode-embedded multilayer
transformers 498–500
co-precipitation method 852, 854–5
SBT 866–73, 874, 875
core-shell structure 677–9, 680, 683–4,
685
improved control of interfaces 684–6,
687
corner nucleation 46, 49–50
correlated nucleation 645–9
correlation length 910–11
coupled-mode theory 959
cracks
flux growth 55–6
microcracking 351, 352, 354, 355,
357
critical thickness 761, 779
cross-field acoustic wave excitation
955–6
crosshatched (tweedlike) domains 464,
465
crosslinking 857
cryogenic actuation 91–2
crystal cuts
field poling and PMN-PT single
crystals
field-dependent domain structures
349–57
optical properties 357–9
thermal stability 341–8
optimisation of cut directions 25–30
polarising microscopy applied to
perovskite structure crystals
336–41
crystal deformation, under external fields
305–17
polarisation rotation and monoclinic
phases 305–12
polarisation rotation vs polarisation
extension 313–17
crystal growth
Bridgman growth see Bridgman
growth
flux growth see flux growth
for medical ultrasonic transducers
102–5
PSN and PSN–PT 185–91
growth mechanism 188–91
SSCG see solid-state single crystal
growth
zone-melting growth 81–3
crystal structures
BiT 1006, 1007, 1008–11
in BZN system 504–9
grain orientation and in BLSF 823–5
crystal symmetry 237
novel crystal symmetries in fully
strained films 779–81
crystal thickness, and domain walls
543–4
crystal variant-based modelling 367–8
crystallisation temperature 604–5
crystallographic shear 706
cubic pyrochlore 504, 505–7
melting behaviour 511–13
phase formation 509–11, 512
phase transition and phase relations
513–14
Curie temperature 112, 131–2, 133,
173–4
BLSF 828, 829, 842
BITN and BITV ceramics 843–4
Bridgman growth 18–19, 20
ceramics containing bismuth 918, 919,
920, 921
flux growth 46, 47
mapping of Curie temperature
50–2
WPNL2204
Index1038
high Curie temperature see high Curie
temperature
Curie-Weiss law 896
cut directions, optimisation of 25–30
see also crystal cuts
dash-like domains 653–4
‘dead layer’ model 762–4
dealcoholation 854
deep reactive ion etching (DRIE) 734
defects
BiT and RE-substituted BiT single
crystals 1015–20
defect-formation mechanism
1018–20
Bridgman growth 13–15
extended structural defects and
ferroelectric properties of
single crystalline PZT films
695–723
interface defects and dielectric
properties 671–4
nano-islands and registration 609–10
deformable mirrors 88–90
degree of orientation (orientation factor)
BLSF 823, 825
BITN and BITV 845, 847
remanent polarisation 835
and RTGG process 809
dehydration 854
dendrite domains 642, 643–5
densification rate 809–10
density of states (DOS) 1011–15
depolarisation field 572–3, 585, 633–5,
643, 659, 660
thin films
ferroelectric size effect 757–62
fully strained films 779–81
diabetes 561–2
diaphragm-type pMUT 733–6
see also piezoelectric micromachined
ultrasonic transducer (pMUT)
dicing process 114, 228
dielectric anisotropy factor 314–16
dielectric constants 245
barium titanate-derived lead-free
ceramics 898–9
BLSF 825–7, 842
BZN pyrochlores 514, 515
ceramics containing bismuth 918, 919,
920, 921
PIMNT ceramics 209, 211
Bridgman-grown crystals 220, 222,
223
flux-grown crystals 215
PMN-PT single crystals 16, 18, 78–9,
80, 110
complete set material properties
252, 253, 254–6, 258
covariation with piezoelectric
constant 22–3
temperature dependence 112, 113
PSN-PT 184, 186
from sol-gel method 858–60
PZN–PT single crystals 248–54, 256,
257
PZT single crystalline films 716–17
SBT from soft chemical methods 870,
873
SSCG single crystals 163, 165, 166–7,
168, 169, 170
dielectric losses 478–9, 480–3
BLSF 825, 827, 842
BTO/STO superlattices 992, 993
BZN-based pyrochlores 516, 519
ceramics containing bismuth 918, 919
and dc bias 84–5, 86
interdiffusion in ceramic composites
677–8, 679, 682, 683
PIMNT crystals 215
PYNT single crystal 138, 139
SZO/STO superlattices 998, 999
dielectric permittivity
bismuth-based perovskite single
crystals 143
BNZ-based pyrochlores 516, 517, 518
Farnell’s theory 988–9, 990
grain boundary enhancement 674
perovskite artificial superlattices
988–1000
BTO/STO superlattices 991–5
permittivity enhancement in BTO/
STO superlattices 995–6
temperature dependence in BTO/
STO superlattices 997–8
SZO/STO superlattices 998–100
PMN 392, 393
PMN–PT 450
WPNL2204
Index 1039
and dc bias 84–5, 86
and frequency 83–4
size effects 455–8, 459, 461–2,
463
thermal stability 341, 342, 344–6,
347
PSN crystals 191–2
PSN–PT crystals 180, 181, 192–4
PYNT single crystal 138, 139
size effects and 448–9, 455–8, 459,
461–2, 463
tungstic oxide–doped PMN–PT
crystals 348
dielectric relaxation
BZN-based pyrochlores 520–1
interface defects 672, 673
dielectric size effect 762–4
dielectric superlattices (DSLs) 933–70
application in acoustics 953–7, 958
application in electro-optic technology
957–60
application in nonlinear parametric
interactions 942–53
future trends 960–1
preparation by modulation of
ferroelectric domains 935–41
preparation by photorefractive effect
941–2
dielectric tunability 521–5, 532
difference frequency generation (DFG)
933
differential scanning calorimetry (DSC)
180–2, 183, 196
differential thermal analysis (DTA)
863–4
diffuse scattering 393–4, 401, 402
interaction between CORs and PNRs
408–12
diffusion
chemical diffusion technique for
preparation of DSLs 935,
938–9
direction and RTGG method 811–13
Dion-Jacobson phase 885, 886
dipole-dipole interaction energy 579
directivity 747–9
discontinuous grain growth 159
discontinuous phase transitions 366
dislocations 15
misfit dislocations see misfit
dislocations
nano-islands 611–12, 614–18, 619
PZT single crystalline films 695,
697–8, 700–7
threading dislocations 695, 697–8,
700–7
distorted 90° domain wall region 286–90
domain engineering 228, 235–65, 266,
328
anisotropy and 367–8
characterisation of domain engineered
crystals 237–48
complete set material properties
248–56, 257
engineered domain configuration see
engineered domain
configuration
enhancement of functional properties
260–3
ferroelectric single crystals 367–8
nano- and micro-domain engineering
622–69
artificially produced nucleation
sites 638
backswitch poling 649–52, 653
dendrite domain structures 642,
643–5
domain observation in LN and LT
629–31
domain shape evolution during
merging 641–2, 643
elementary nucleation processes
632–8
experimental conditions 627–31
future trends 663–4
growth of isolated domains 638–41
loss of domain wall shape stability
642–4
modern tricks 649–57
oriented quasi-regular domain rays
652–7
polarisation reversal in relaxors
657–62
self-assembled nanoscale domain
structures 645–9
stages of domain structure
evolution during polarisation
reversal 624–6
WPNL2204