Hoffman D.M., Singh B., Thomas J.H. (Eds). Handbook of Vacuum Science and Technology
Подождите немного. Документ загружается.
826
Index
Molecular motion, 12-13
impacts with chamber wall, 19
molecular mean free path, 17, 19
thermal transpiration, 20-21
time to form monolayer, 20
Molecular sieve, 234
Molybdenum, 456
Molybdenum disulphide, as seal metal, 481
Multi-fastener flanges, 414
Multiblade valves, 399
Multistage systems
diaphragm pumps, 86
vacuum blowers, 112-113
N
Near-threshold sputtering, 609
Needle valves, 311,407
Net pumping speed, 65
Next Linear Collider project, 801
Nickel, 456
as seal metal, 481
Nitride films, and pulsed laser deposition, 707
Nonevaporable getter pumps, 220, 247-252
combined with sputter-ion pump, 252
self-contained pumps, 250-251
for ultra-high vacuum, 220
uses of, 247-249, 249-252
Nonideal gases, 10
Off-axis substrate configuration, to avoid
splashing, 704-705
Oil contamination, 594-595
Oils,
as lubricant, 458-459
Optical coatings, sputter technology for, 625
Optical emission spectroscopy, plasma diagnos-
tic,
642
Optical products, roll-to-roll vacuum coating,
764
Optimum performance curve, 316
Organic materials, 460
deposition of, 775
and pulsed laser deposition, 707-708
Orifice flow technique, mass spectrometer cali-
bration, 367-369
Orifice geometry, 64
Original equipment manufacture (OEM) sup-
port, plasma etching tools, 666-667
0-ring-sealed
flanges, 412-417
Outgassing
and aluminum, 509-512
and aluminum alloy, 486
baked system for,
511
-512
and bakeout temperatures/times, 507
and chamber dimensions, 493
and chamber pressure,
491
-493
and construction materials, 447
andcyropump, 173
decreasing rate of, 506-507
by diffusion of absorbed gas to exposed sur-
face, 497-501
and elastomers, 488-489
experimental data on, 501
free outgassing rate, 485
and gaskets, 506-507
ion generation process, 345-346
mass analysis, 294
and metals/ceramics,
501
-504
and net pumping speed, 484-485
and nonmetallic materials, 490-491
outgassing rates, 23
and plastics, 488-489
and plastics/elastomers, 497-501
polymer seals, 468-471
polymers, 561-562
pressure versus time in, 495-497
and properties of materials, 485-491
and pumpdown from atmospheric pressure,
494
and pumpdown time, 68-69
pumpdown with, 495
rate during second pumpdown, 504-506
reported rates, 508
and stainless steel, 486
unbaked system for, 510-511
and water, 447
Oxide films, and pulsed laser deposition, 707
Oxygen-free, high-conductivity copper, in con-
struction of electrical conductors, 455-456
Oxygen plasmas, for cleaning, 577
Ozone
for cleaning, 576-577
and
0-ring
cracking, 466
Packaging products, roll-to-roll vacuum coating,
764
Index
827
Parallel, conductances in, 33
Parallel-plate triodes, plasma etching tool, 654
Partial pressure, 10
Partial pressure measurement, 290, 351-355
ion detector, 354-355
ion source, 351
mass
filter,
351, 354
Particle
filter,
to avoid splashing, 703-704
Particulates
defects, avoiding and welding, 542
filtration from environment, 588-589
and plasma etching, 640-641
process-related contamination, 596
removal, methods of, 569-570
Pascal, 3
Passive storage, 591
Penning discharge, 222
Penning gauge, 278
Permeability, 23
Permeation
and construction materials, 449
and nonmetallic materials, 490
polymer seals, 470-471
Perovskiles, and pulsed laser deposition, 706-
707
Phillips ionization gauge, 278
Phosphorous, in vacuum materials, 461
Phosphorous pentoxide, 591
Photo ionization, 307
Photoactivation, 52-53
Photodesorption, 598
Photon-stimulated desorption, 53
pH adjusters, for cleaning, 575
Picture framing, 726
Pinhole flaking, 568
Pipe flow geometry, 64
Piranah solution, 575
Pirani gauges, 265-266
Plasma cleaning, 571, 577
Plasma diagnostics
ellipsometry, 641
impedance measures, 641
in situ rate measurements, 641
Langmuir probe, 642-643
laser absorption spectroscopy, 642
laser-induced fluorescence, 643
laser reflection interferometry, 641
mass and energy sampling, 642
microwave interferometry, 642
optical emission spectroscopy, 642
Plasma disk source method, plasma etching, 663
Plasma enhanced chemical vapor deposition,
711-728
densities on plasmas, 714
development of, 715-716
materials deposited by, 715
operational factors, 711-717
particulate control, 718
remote deposition, 722-723
scaleup, 723-727
uses of, 716-717
Plasma etching, 628-667
contamination control, 640-641
and damage, 640
end point detection, 666
etch profile control (anisotropy), 635-638
high etch rate, 635
ion-bombardment-enhanced etching, 636
ion-enhanced etching, 636
layers in semiconductor integrated circuits,
634
low-pressure etching, 636
physical processes in, 628-631
selectivity, 638-639
sheath formation,
631
-633
steps in, 633
trends related to, 665
uniformity of
etch,
639-640
uses of, 628
water temperature effects, 637-638
Plasma etching tools
advanced etch reactors, 649-667
barrel reactors, 644-645
cluster tools, 666
development of tool, 643-644
diffusion source configuration, 663-664
diode configuration limitations, 649
electron cyclotron resonance sources, 662-
664
electrostatic chucks, 666
helical inductive couplers, 659-660
helical resonators, 660-661
high-pressure diodes, 645-646
hollow-anode-enhanced triodes, 654-656
induced DC bias, 648-647
inductively coupled plasmas, 658-662
low-pressure etching, 646-647, 650-651
magnetic enhancement, 650-651, 652-653
magnetically enhanced reactive ion etcher
(MERIE), 652
828
Index
Plasma etching tools (continued)
magnetically enhanced triodes, 656-658
magnetron sputtering, 652-653
matching network, 648, 662, 664
original equipment manufacture (OEM) sup-
port, 666-667
parallel-plate triodes, 654
plasma disk source method, 663
plasma generation, control of, 651-652
reactive ion etchers, 646-647
spiral inductive couplers, 661-662
substrate bias, control of, 651-652
Plasma potential, 630
Plasma-related applications, mass analysis,
294-295
Plastics
and outgassing, 488-489
outgassing, 497-501
Plexiglass, 460
PNEUROP flanges, 414
Poiseuille's equation, 35-36
Polishing, 554
aluminum alloys, 559
chemical polishing, 557
copper, 560-561
electropolishing, 556-558
fine/course abrasive powder, 555
low-carbon steel, 558
stainless steel, 556-558
Polyimide
as electrical insulator, 457
as seal material, 472
Polymer seals, 463-472
compression, 466-467
design factors in use of, 472-474
limitations in use of, 463-464
0-ring
material selection,
471
-472
outgassing, 468-471
permeation, 470-471
selection criteria, 465-466
trade names, 464-465
Polymers
cleaning, 569
outgassing, 561-562
properties of, 448
Polymethylmetacrylate, for vacuum chamber,
460
Polystyrene divinylbenzene, 460
Polytetrafluoroethylene (PTFE), as electrical in-
sulator, 457
Polyurethane, as seal material, 472
Polyvinyl chloride (PVC), in vacuum materials,
460
Poppet valves, 392-393, 394, 405, 407
Pores,
47-48
Porosity, avoiding and welding, 542
Positive ray analyzer, 336
Power common, mass flow controller, 384
Precipitated calcium carbonate, 570
Pressure
gas,
8, 15-16
and outgassing, 491-492, 495-497
Pressure gauges
capacitance gauges, 778
ion gauges, 778
roll-to-roll vacuum coating, 778
thermal conduction gauges, 778
Pressure measurement, gauges, types of, 258-
282
Pressure rate-of-rise technique, mass spectrome-
ter calibration, 366-367
Pressure ratio
lighter gases, 133
vapor jet pumps, 132
Pressure regions, 3-5
Pressure stability,
vapor
jet pumps, 146-148
Pressure units, conversion factors, 4
Primary backstreaming, 137-138
Printing products, roll-to-roll vacuum coating,
765
Process control, mass analysis, 295-296
Process pumping, 74-75
Process-related contamination, 596
Process specifications, 600
Processing environment, and surface prepara-
tion,
587-589
Processing of
parts,
566-567
and surface chemistry, 566-567
and surface morphology, 566
Product dehydration systems, vacuum blowers,
114-115
Protective coatings, aluminum, 541
Pulsed laser deposition, 694-707
ablation mechanism, 698-699
advantages to, 700-701
and crystallinity enhancement, 700-701
development of, 694-695
and diamondlike carbon, 706
future view of, 708
large-area uniformity,
701
-702
Index
829
limitations of, 701-705
and metal films, 706
modifications to system, 696-697
multilayer growth, 701
and nitride films, 707
operational factors, 695-697
and organic materials, 707-708
and oxide films, 707
and perovskites, 706-707
and reactive deposition, 701
and semiconductors, 706
splashing, 702-705
and target/substrate geometry, 696
types of
lasers,
695-696
Pump protection valves, 407
Pumpdown, 65-69
constant speed case, 66-67
constant throughput case, 67
initial, from atmospheric pressure, 494
and outgassing, 68-69, 494-495, 504-506
in presence of
leak,
67-68
in presence of outgassing, 68-69
second pumpdown, 504-506
time frame, 65-66
Pumping chamber, diaphragm pumps, 84-85
Pumping speed, 23, 64-65
diaphragm pumps, 87-88
geometries used, 64
and outgassing, 493
sputter-ion pumps, 229-231
turbomolecular pumps, 189
vacuum blowers, 103-104
vapor jet pumps, 122-126
Pyralin, 457
Pyre ML, 457
Pyrex, 452
Quadrupole instruments, ion generation, 307
Quadrupole ion trap, 319
Quadrupole mass filters, 316
Quartz viewports, 444-445
Radial seal, 473
Radial sources, ion generation, 306
Radioactive gases, turbomolecular pumps,
204
Radiated heat, aluminum, absorption of, 536-
537
Rate sensor, mass analysis, 296
Reactive cleaning, 575-578
Reactive ion beam etching, 682
Reactive ion etchers, plasma etching, 646-647
Reactive sputtering, 621-623, 772-774
Rectangular flanges, 425
Refrigerator operation, cryogenic pumps, 152-
153
Regeneration, cryogenic pumps, 165-167, 180
Reinburg reactors, 645-646
Release agents, for stripping, 563
Remote deposition, 722-723
Removable surfaces, 562-565
stripping, 562-564
Residual gas analyzers, 298, 492
Resistive heating, for evaporation, 768
Resolving power, mass analysis, 300
Resonance gauges, 278-279
Rexolite, 460
Reynolds number, 26
RF diodes, sputter deposition, 614-615
RF ion source, 674
Rhenium, 456
ion generation, 305
Rinsing, in cleaning process, 578-580
Robotic arms, coaxial feedthrough, 442
Roll-to-roll vacuum coating, 761-787
abrasion resistance, 786
adhesion, causes of, 786-787
boat materials, 769-770
cathodic arc deposition, 774
chemical vapor deposition, 775
corrosion rates, decreasing, 785-786
crucible materials, 769-770
deposition materials, 766
development of, 761-762
electron beam heating, 768-769
environmental problems of, 785-787
evaporation, 766-769
film measurement after deposition, 784
inductive heating, 768
monitoring/control, 783-784
organic materials, deposition of, 775
pressure gauging, 778
resistive heating, 768
sputtering, 770-774
steps in process, 765
substrates (webs), 779-783
830
Index
Roll-to-roll vacuum coating {continued)
types of units for, 762-763
uses of, 763-765
vacuum pumps, 115-111
Rotameters, 377
Rough pumping sputter-ion pumps, 233-236
Rutherford backscattering spectrometry, 672,
751-757
instrumentation, 753-754
operational factors, 751-753
Safety factors
cleaning, 586
tolerable forepressure, 129-130
vapor jet pumps, 129-130
Sample introduction system, 755-757
horizontal introduction system, 756
instrumentation, 756
pumpdown time, 756
Sanford, 454
Saponifiers
for cleaning, 572-574
types of, 572-574
Sapphire viewports, 445
Scaleup
modular scaleup, 724-725
plasma-enhanced chemical vapor deposition,
723-727
Scan rate, mass analysis, 300
Scroll pumps, 235
Sealed gas sample analysis, uses of, 296-297
Seals
bonnet seals, 402
demountable seals, 512-518
dynamic seals, 463
elastomer seals, 472-474
metal seals, 464,474-482
polymer seals, 463-472
static seals, 463
within valves, 402
Secondary backstreaming, 137-138
Secondary ion mass spectrometry, 308, 373,
745-751
dynamic SIMS, 748-749
operational factors, 745-748
static SIMS, 749-751
Selectivity, plasma etching, 638-639
Selenium, in vacuum materials, 461
SEMI flanges, 425, 426
Semiconductors
and pulsed laser deposition, 706
turbomolecular pumps, 206-207
Sensing techniques, mass flow controller, 378-
379
Sequenced start systems, vacuum blowers, 108-
109
Series, conductances in, 33-34
Sheath formation
plasma etching,
631
-633
presheath, Bohm criteria, 632-633
Sheaths, nature of, 631
Shock-wave-induced droplet expulsion, and
splashing, 702
Shutoff valves, types of, 391-396
Signal common, mass flow controller, 384
Silica gel, 591
Silver
avoiding, 461
as electrical conductors, 456
as seal metal, 481
Simple oxides, and pulsed laser deposition,
707
Single-wafer etchers, 649-650
Single-wafer tool, 624
Skull, 770
Slit valves, 393
Slush hydrogen pumping systems, vacuum
blowers, 113-114
Snow-Floss, 570
Soaking, cleaning, 580
Soft start valves, 407
Solubility, and construction materials, 447, 449
Solvents
cautions in use of, 438
for cleaning,
571
-572
densifing, 572
polar/nonpolar, 571
solubility parameter, 571
types of, 571-572
Somorjai's notation, 42
Sorption pump, 235-236
operation of, 236
Space missions, mass spectrometers, 336
Special construction ion sources, ion generation,
307
Spectrum
fingerprints,
344
Spiral inductive couplers, plasma etching tool,
661-662
Index
831
Splashing, 702-705
avoidance of, 703-705
causes of, 702-703
Split flow turbomolecular pumps, 200
Spraying
cleaning, 581
particulate removal, 570
Sputter cleaning, 598
Sputter deposition,
611
-624
bias sputtering, 623-624
DC diodes, 613-614
ion beam, 683-687
magnetron sputtering, 616-623
mass analysis, 371-372
RF diodes, 614-615
Sputter etching, compared to sputter deposition,
611-512
Sputter ion pumps, 220-242
combined with nonevaporable getter pumps,
252
construction of, 227-229
operation of, 221-227
operational life of, 231-232
pressure measurement with, 232
pumping speed, 229-231
rough pumping sputter-ion pumps, 233-236
start-up/running of, 236-240
troubleshooting/maintenance of, 240-241
for ultra-high vacuum, 219
uses of, 232-233
Sputter plate, 176
Sputtering, 609-626
amplified sputtering, 626
bias sputtering, 623-624
and deposition,
611
-624
and energy levels, 609-610
future view of, 626
high-rate sputtering, 771-772
industrial uses of, 624-626
intrinsic resputtering, 612
ionized sputter deposition, 626
knock on effects, 609
magnetron sputtering, 616-623, 624-625
materials/alloys for, 774
nature of, 609
near-threshold sputtering, 609
reactive sputtering, 621-623, 772-774
roll-to-roll vacuum coating, 770-774
sputter yields, 609-610
Sputtering systems, cryogenic pumps, 176-177
Square card diagram, 105
Stainless steel
alloys, types of, 554-555
cleaning of, 568-569
in construction of vacuum chamber, 452-453
corrosion rate, 540
mill plate/finishes, types of, 555-556
and outgassing, 486
polishing, 556-558
relative thickness, 534-535
Stanford Positron-Electron Asymmetric Ring
(SPEAR), 793, 794, 796, 797-798
Stai<:ell geometry, 224
Static process, calibration of gauges, 287
Static seals, 463
Static secondary ion mass spectrometry, 749-
751
Static volume expansion, mass spectrometer
calibration, 365
Stellarators, 474
Sticking coefficient, 43-44
Storage, 590-591
active storage, 591
passive storage, 591
Storage rings, 790-798
development of, 790-795
materials used, 797
pumping system developments, 796-798
Stripping, 562-564
methods for, 563
Sublimation pumps, 242-247
control units for, 247
electron bombardment heating, sublimation
from, 247
operation of, 243-244
titanium spheres, sublimation from, 246-247
for ultra-high vacuum, 219-220
uses of, 244-245
wire sublimator sources, 246
Subsurface boiling, and splashing, 702
Sulfur, in vacuum materials, 461
Super-Conducting Super Collider, 790, 798
Superconducting RF accelerators, 800-801
development of, 800-801
Supercritical fluids, 572
Supermagnetron, 657
Surface adsorption isotherms, 45-47
Surface analytical methods
electron spectroscopies, 732-745
in-line use, 757
832
Index
Surface analytical methods (continued)
Rutherford backscattering spectrometry,
751-755
sample introduction system, 755-757
secondary ion mass spectrometry, 745-751
Surface area, 44
Surface migration, backstreaming, 140
Surface modification, 554-565
aluminum alloys, 559-560
ceramics, 561
copper, 560-561
glass,
561
hardening of surface, 565-566
low-carbon steel, 558
polymers, 561-562
removable surfaces, 562-565
stainless steel, 554-558
Surface physics
adsorption,
40-41,
43-47
capillary action, 47-48
chemisorption, 40, 42
condensation, 48-49
desorption, 49-52, 53-54
gas release from surface, 54
photoactivation, 52-53
surface area, characteristics of, 44
Surface preparation
cleaning, 553,567-601
processing of parts, 566-567
surface modification, 554-565
Surface roughness, necessity of, 554
Surface tension, and cleaning, 574
Surface-to-volume ratio, and pump perfor-
mance, 74
Surf-riding mechanism, 632
System-related contamination, 592-596
Tailing contribution, mass analysis, 299
Tantalum, 456
Tee element, inlet systems, 302-303
Teflon, 457, 569
Televac, 269
Temperature, of
gas,
9
Temperature desorption spectroscopy, 373
Terpenes, 572
Thermal conduction gauges, 778
Thermal conductivity
aluminum, 536
coefficient of, 21
Thermal conductivity gauges, 265-270
Thermal conductors, materials for, 457-458
Thermal desorption, 50-52, 596-597
Thermal insulators, construction materials,
457-458
Thermal radiation, cryogenic pumps, 162
Thermal siphoning, mass flow controller, 385
Thermal time constant, aluminum, 537-538
Thermal transpiration, 20-21
Thermistor gauges, 268
Thermocouple gauges, 266-268
Thin-film magnetoresistance (MR) read heads,
686
Thoria-coated cathodes, ion generation, 305
Thorialed tungsten, 305
Throttling valves, 398
Throughput
conversion factors, 31
gas transport, 61-62
maximum, 127-128
vapor jet pumps, 124, 127-128
Throughput pumps, 60
Throughput Q, 30
Time to form monolayer, 20
meaning of, 4
Time-of-flight mass spectrometry, 299, 322-
323,
373-374
operational factors, 749-751
Titanium, 456
Titanium hydride, 226
Titanium spheres, sublimation from, 246-247
Tokamaks, 802, 805-809
future view, 810
historical view, 805-806, 808-809
impurity problem, 806-808
plasma interaction in vessel wall, 806
Tolerable forcpressure
backing pump criteria, 128-129
discharge pressure, 128
and pressure ratio, 130-131
safety aspects, 129-130
vapor jet pumps. 128-132
for various gases, 131-132
Torr, 3
Transfer standards, mass spectrometer calibra-
tion, 370
Traps,
vapor jet pumps, 133
Trichloroethylene, 571
Triode geometry, advantages of. 224-225
Triode hot cathode ionization gauges, 271-273
Triodes, plasma etching tools, 654-658
Index
833
True splashing, 702
Tubulations, vacuum valves, 402-403
Tungsten, 456
ion generation, 304-305, 346-347
Tungsten sputter, 456
Turbine-lype pumps, 76
Turbomolecular pumps, 95, 183-212
backing pumps, 202
baking out, 202-203
balancing/vibration, 194
combined with cryopumps, 205-207
combined with MDP pumps, 197-200
compression, 188
cooling of, 203
corrosive gases, pumping of, 203-204
design elements, 190-195
development of, 184, 192
drive systems, 194-195
features/applications, 201
guidelines for operation of,
211
-212
and magnetic fields, 203
molecular drag pumps, 195-197
operating principles, 183-184
performance factors, 184-188
pumping speed, 189, 190
radioactive gases, pumping of, 204
rotators/stators,
191
-192, 194
rotor suspension, 192-194
in semiconductor manufacturing, 206-207
special measures/applications, 208-210
split flow pumps, 200
trade names for, 200-201
ultimate pressure, 190
for ultra-high vacuum, 218-219
venting of, 202, 205-206
Turbulent gas flow, 26, 27-28
Two-stage valves, 405
U
Ultimate pressure, 69-71
molecular drag pumps, 195-196
pump limit versus system limit, 70-71
turbomolecular pumps, 190
Ultra-high vacuum, 7, 71-72
cryogenic pumps, 217-218
definition of, 214
diffusion pumps, 217
getter pumps, 220, 242-252
sputter-ion pumps, 219, 220-242
sublimation pumps, 219-220
system design for, 215-216
turbomolecular pumps, 218-219
Ultra-high-vacuum technology, 789-810
cold-bore machines, 798-800
development of, 789-790
magnetic fusion, 801-810
Next Linear Collider project, 801
storage rings, 790-789
superconducting RF accelerators, 800-801
Ultrapure water
large volumes, making of, 580
for rinsing, 578-580
Ultrasonic cleaning, 582-584
cavitation bubbles, formation of, 582-583
factors related to, 583
and
fixturing,
584
limitations of, 583-584
Ultrasonic desorption, 53, 598
Unconstrained flanges, 518
Vacuum
applications of, 5
definition of, 3
degree of, 4
high vacuum, 6-7
low-vacuum, 5
medium-vacuum, 5
pressure regions, 3-5
ultra-high vacuum, 7, 215-252
Vacuum applications
ion beam technology, 672-691
mass analysis, 298
plasma etching, 628-667
plasma-enhanced chemical vapor deposition,
711-728
pulsed laser deposition, 694-707
sputtering, 609-626
surface analytical methods, 732-757
Vacuum blowers, 97-115
blower rotating speed control, 109
bypass valves, 109-110
components of, 97-100
compression ratio, 101-102
cool gas feedback blowers, 111
discharge gas cooling, 108
gas carryback, 103
gas species, 102
inlet throttling systems, 109
liquid-sealed blowers, 112
834
Index
maximum allowable compression ratio, 107-
108
maximum allowable discharge temperature,
107
maximum allowable temperature rise, 106-
107
multistage systems, 112-113
operating principles, 100-101
power requirements, 104-106
pressure level, 101-102
product dehydration systems, 114-115
pumping efficiency,
101
-103
pumping speed calculations, 103-104
rotational speed, 102
sequenced start systems, 108-109
slush hydrogen pumping systems, 113-114
Vacuum chamber, removing air from, 59-60
Vacuum chamber materials,
451
-455
aluminum, 453-455
glass,
451-452
steel, 452-453
Vacuum measuring instruments, 282-286
combination instruments, 282, 284
intelligent gauge tubes, 286
modular instruments, 284
single-measurement instruments, 282
Vacuum pumps
cryogenic pumps, 149-181
cryopumps, 776-777
diaphragm pumps, 84-96
diffusion pumps, 776
gas transport, 61-62
performance parameters, 62-64
process pumping, 74-75
pump system relationships, 73-77
pumpdown time, 65-69
pumping speed, 64-65
roll-to-roll vacuum coating, 775-777
turbomolecular pumps, 183-212
types of pumps, 75-76
ultimate pressure, 69-71
valved pumping system, 82-83
valveless systems, 80-82
Vacuum valves
actuation of
valves,
400-401
butterfly valves, 397, 398, 407
conductance, 402-403
control valves, 397-398
diaphragm valves, 393, 396
flanges, 402-403
gate valves, 393, 395, 406, 407
installation of, 407-408
multiblade valves, 399
poppet valves, 392-393, 404, 405, 407
sealing of actuating motion, 400
seals within valves, 402
shutoff valves, 391-396
slit valves, 393
specialized valves, types of, 404-407
throttling valves, 398
tubulations, 402-403
Valved pumping system, 82-83
Valveless systems, 80-82
van der Waals forces, 41
Vapor cleaning, 581-582
system for, 581-582
Vapor contamination, 588
Vapor deposition, mass analysis, 371
Vapor drying, 585
Vapor jet pumps, 76
backing pump requirements, 128-129
backstreaming, 137-143
baffles, 132-133
cold caps, 146
design features, 144-145
discharge pressure, 128
fluid breakdown/purification, 136-137
gas type and speed, 125-126
gas type and tolerable forepressure, 131-
132
operating range, 121
performance factors,
121
-122
pressure ratio, 132, 133
pressure ratio effects, 130-131
pressure stability, 146-147
pumping fluid section, 133, 135
pumping mechanism, 117-120
pumping speed, 122-126
pumping stages, number of, 120
residual gas analysis, 135-136
safety factors, 129-130
size effects, 124-125
speed-efficiency capture probability, 123
throughput, 124, 127-128
tolerable forepressure, 128-132
traps,
133
ultimate pressure, 132-137
vapor/gas interaction, 120-121
Index
835
Vapor pressure, 10
cryogenic pumps, 157-159
high-vapor-pressure materials, 460-461
low-vapor pressure materials, 446-447
Vee-grove
joints,
545, 546
Viewports
glass viewports, 444
mounting system for, 445
quartz viewports, 444-445
sapphire viewports, 445
Virtual
leak,
473
Viscous gas flow, 28
circular tube, 35-36
rectangular duct, 36
Viton, 464-465, 569
Viton E60C, 465
Viton gaskets, 412
Volatile organic compounds, 572
Volume, gas, 8-9
Volumetric flow rate, gas flow, 30
w
Wall creep
and contamination, 592-593
minimizing, 593
Water, and outgassing, 447
Water vapor, 45
cyrogenic pumps, 177-178
Webs,
779-783
defects, types of, 783
handling of, 780-782
materials for, 779-780
roll-to-roll vacuum coating, 762-763, 779-
783
temperature control, 782-783
Welding
AC-TIG method, 547
aluminum, 541-548
crack defects, avoiding, 542-546
DC-TIG methods, 547
particulate defects, avoiding, 542
porosity, avoiding, 542
Whiskers, removal from ion pump, 240-
250
Wire seals, 515
Wire-sealed flanges, 423-424
X-ray photoelectron spectroscopy, 732, 733,
736,
737-740
X-ray sources, 744-745
Zinc, 446
avoiding, 461