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DEUTCHMAN AND PARTYKA
form-graphite. With advanced processes like chemical vapor deposition (CVD) and ion
beam enhanced deposition, it is possible to influence, to
a
certain degree, the energy and
charge states of the particles in the vapor phase, thus allowing some control over the
energy state (stable or metastable) and crystallographic and stoichiometric form of the
deposited films. Thus it is feasible to synthesize a variety of diamond and diamondlike
films with
a
range of mechanical, chemical, optical, electronic, and themla1 properties.’-”
Practical applications for the various films on actual engineered components will be deter-
mined by the film properties desired (i.e.. hardness, resistivity, optical transmission, etc.)
and the nature of the deposition process used to produce the films.
3.0
FILM DEPOSITION TECHNIQUES
The development
of
techniques and technologies capable
of
the deposition
of
continuous
thin diamond and diamondlike carbon films has been sparked by advances in the semicon-
ductor and thin film deposition indu~try.”~ These new techniques enable diamond film
deposition on the surfaces
of
both semiconductor and nonsemiconductor materials for
potential use in
a
wide variety of applications, both electronic and nonelectronic. Two
distinct coating methodologies have been developed, one relying
on
deposition from an
excited plasma discharge sustained in
a
low pressure atmosphere of hydrocarbon gases
(plasma-assisted CVDD), and one relying on the direct deposition of carbon films, either
without or with simultaneous bombardment by an intense flux
of
high energy ions (ion
beam enhanced deposition).
3.1
Plasma-Assisted Chemical Vapor Deposition (PACVD)
Techniques
Deposition of diamondlike carbon films with the plasma-assisted CVD technique proceeds
by exciting hydrogen-hydrocarbon-argon gas mixtures either in
a
glow discharge””’ or
with microwave radiation’””* (Fig.
1).
In both cases a plasma is produced, and free carbon
atoms are generated by the thermal decomposition of the hydrocarbon gas component.
The carbon atoms liberated in the plasma have enough energy to allow tetragonal car-
bon-carbon (diamond) bonding, making possible the condensation of diamond and dia-
mondlike carbon films. The films produced are actually mixtures
of
trigonally bonded
carbon (graphite), tetragonally bonded carbon (diamond), and other allotropic crystalline
To dissociate the hydrocarbon starting gas and provide enough thermal energy to
allow formation of trigonal and/or tetragonal carbon bonding, temperatures in the plasma
discharge must exceed 2000°F. Deposition rates on the order of
1
pmhr are achievable.
The presence of free hydrogen in the processing gas helps to promote film growth with
higher concentrations of tetragonally bonded diamond versus trigonally bonded graphite.
This occurs because graphitic bonds are much more chemically reactive than are diamond
bonds, resulting in selective etching
of
the graphite component
of
the films by free hydro-
gen gas in the plasma. However the presence
of
hydrogen trapped in the deposited diamond
films can produce high levels of tensile stresses, leading to embrittlement and buckling.
Applications for diamond films formed by the PACVD techniques are limited to
those in which the substrate can be raised
to
temperatures
in
excess
of
2000°F. Also. the
diamond films deposited by this technique grow epitaxially and therefore condense on
and adhere best to crystalline substrates like silicon and germanium. Therefore diamond
films deposited by PACVD techniques are best suited for applications in semiconductor