90 2 Energy-Loss Instrumentation
Fiber-optic coupling is less satisfactory for electrons of higher energy
(>200 keV), some of which penetrate the scintillator and cause radiation damage
(darkening) of the fibers or generate x-rays that could damage a nearby diode array.
Some electrons are backscattered from the fiber plate, causing light emission into
adjacent diodes and thereby augmenting the tails on the response function (Gubbens
et al., 1991). These problems are avoidable by using a self-supporting scintillator
and glass lenses to transfer the image from the scintillator to the array. Lens optics
allows the sensitivity of the detector to be varied (by means of an aperture stop) and
makes it easier to introduce magnification or demagnification, so that the resolu-
tion of the conversion screen and the detector can be matched in order to optimize
the energy resolution and DQE (Batson, 1988). However, the light coupling is less
efficient, resulting in decreased noise performance of the system.
2.5.3 Direct Exposure Systems
Although diode arrays are designed to detect visible photons, they also respond
to charged particles such as electrons. A single 100-keV electron generates about
27,000 electron–hole pairs in silicon, well above CCD readout noise, allowing a
directly exposed array to achieve high DQE at low electron intensities. At very low
intensity (less than one electron/diode within the integration period) there is the
possibility of operation in an electron counting mode.
This high sensitivity can be a disadvantage, since the saturation charge of even
a large-aperture photodiode array is equivalent to only a few hundred directly inci-
dent electrons, giving a dynamic range of ≈10
2
for a single readout. However, the
sensitivity can be reduced by shortening the integration time and accumulating a
large number of readouts, thereby increasing the dynamic range (Egerton, 1984).
But to record the entire spectrum with a reasonable incident beam current (>1 pA),
some form of dual system is needed, either using serial recording to record the low-
loss region (Bourdillon and Stobbs, 1986) or using fast beam switching and a dual
integration time on a CCD array (Gubbens et al., 2010).
Direct exposure involves some risk of radiation damage to the diode array. To
prevent rapid damage to field-effect transistors located along the edge of a photodi-
ode array, Jones et al. (1982) masked this area from the beam. Even then, radiation
damage can cause a gradual increase in dark current, resulting in increased diode
shot noise and reduced dynamic range (Shuman, 1981). The damage mechanism is
believed to involve creation of electron–hole pairs within the SiO
2
passivating layer
covering the diodes (Snow et al., 1967) and has been reported to be higher at 20-keV
incident energy compared to 100 keV (Roberts et al., 1982). When bias voltages are
removed, the device may recover, especially if the electron beam is left on (Egerton
and Cheng, 1982).
Since the dark current diminishes with decreasing temperature, cooling the array
reduces the symptoms of electron-beam damage. Measurements on a photodiode
array cooled to −30
◦
C suggested an operating lifetime of at least 1000 h (Egerton
and Cheng, 1982). Jones et al. (1982) reported no observable degradation for an