Enhancement of piezoelectric properties in perovskite crystals 317
caused by composition variation at a morphotropic phase boundary,
temperature-induced phase transitions, or electric field and stress-induced
metastable states. It will be further shown that whether the enhancement
happens by polarization rotation or by polarization extension (contraction) is
determined by the anisotropy of the free energy profile.
Polarization rotation is used for increasing the piezoelectric response of
some crystals by so-called domain engineering (see Chapter 10). According
to the definition of Bell (2001), a domain engineered crystal is one which
has been poled by the application of a sufficiently high field along one of the
possible polar axes of the crystal other than the zero-field polar axis, creating
a set of domains in which the polarizations are oriented such that their angles
to the poling direction are minimized. In a perovskite material there are
therefore three possible sets of poling directions 〈111〉
C
, 〈101〉
C
and 〈001〉
C
,
if monoclinic phases are ignored (Wada et al., 1998, 1999, 2004, 2005 Park
et al., 1999; Park and Shrout, 1997; Erhart and Cao, 2003, Erhart, 2004;
Davis et al., 2005). Obviously, domain engineering can be used to enhance
(increase) piezoelectric properties only in ‘rotator’ ferroelectrics; indeed, the
domain engineered crystals with the largest enhancement of the piezoelectric
properties are strong ‘rotators’ such as PMN–xPT and PZN–xPT (Park and
Shrout, 1997). In contrast, ‘extender’ ferroelectrics such as PbTiO
3
, where
the zero-field piezoelectric coefficient is highest along the polar axis, will
not profit from domain engineering. Thus,
d
33
*
for example, can be enhanced
only by domain-engineering in ‘rotator’ ferroelectrics. As already mentioned,
this can be changed under external bias fields (electric or mechanical).
Since poling along the zero-field non-polar direction creates domain walls
in the crystals, the question is posed whether enhanced piezoelectric response
is due to the presence of domain walls or is related to piezoelectric anisotropy
(that is, their intrinsic ‘rotator’ character). It can be shown that in some
domain engineered crystals the enhancement is largely accomplished by
their ‘rotator’ character (Damjanovic et al., 2003b; Zhang et al., 2003b).
However, there is strong evidence that increased density of domain walls in
domain engineered crystals can further enhance this intrinsic effect (Wada et
al., 2004, 2005). The effect seems to be related to the broadening of the
domain walls by the driving field (Rao and Wang, 2007).
11.3 Anisotropy of a free energy and piezoelectric
enhancement
In this section we discuss enhancement of the piezoelectric effect in terms of
the crystal’s free energy. It will be shown that the enhancement may be
induced by proximity of thermally induced phase transitions, by presence of
a morphotropic phase boundary, and by special configurations of external
electric field and stresses. In each case, the origin of the piezoelectric (and