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Introduction and Basic Characteristics

3–18

Motorola TMOS Power MOSFET Transistor Device Data

Absolute Maximum Ratings

Absolute maximum ratings represent the extreme capabili-

ties of the device. They can best be described as device

characterization boundaries and are given to facilitate “worst

case” design.

Drain–to–Source Voltage (V

DSS

, V

DGR

)

– This represents

the lower limit of the devices blocking voltage capability from

drain–to–source when either the gate is shorted to the

source (V

DSS

), or when a 1 MΩ gate–to–source resistor is

present (V

DGR

). It is measured at a specific leakage current

and has a positive temperature coefficient. The voltage

across the Power MOSFET should never exceed this rating

in order to prevent breakdown of the drain–to–source

junction.

Maximum Gate–to–Source Voltage (V

, V

GSM

)

– The

maximum allowable gate–to–source voltage as either a con-

tinuous condition (V

), or as a single pulse non–repetitive

condition (V

GSM

). Exceeding this limit may result in perma-

nent device degradation.

Continuous Drain Current (I

)

– The dc current level that

will raise the devices junction temperature to it’s rated maxi-

mum while it’s reference temperature is held at 25°C. This

can be calculated by the equation:

where,

= SQRT (P

DS(on)

@ MAX T

)

SQRT

DS(on)

MAX T

= Square root

= Device’s maximum power dissipation

= Device’s “on” resistance

= Device’s maximum rated junction temperature

Pulsed Drain Current (I

)

– The maximum allowable peak

drain current the device can safely handle under a 10 µs

pulsed condition. This rating takes into consideration the de-

vices thermal limitation as well as R

DS(on)

, wire bond and

source metal limitations.

Drain–to–Source Avalanche Energy (EAS)

– This specifi-

cation defines the maximum allowable energy that the device

can safely handle in avalanche due to an inductive current

spike. It is tested at the I

of the device as a single pulse

non–repetitive condition. This value has a negative tempera-

ture coefficient as shown by the “Maximum Avalanche Ener-

gy versus Starting Junction Temperature” figure shown in the

data sheet. For repetitive avalanche conditions, this value

should be derated using the “Thermal Response” figure

shown in the data sheet for calculating the junction tempera-

ture and the “Maximum Avalanche Energy versus Starting

Junction Temperature” figure also shown in the data sheet.

Maximum Power Dissipation (P

)

– Specifies the power

dissipation limit which takes the junction temperature to it’s

maximum rating while the reference temperature is being

held at 25°C. It is calculated by the following equation:

where,

= (T

– T

)/R

thjr

= Maximum power dissipation

= Maximum allowable junction temperature

= Reference (case and or ambient) temperature

= Thermal resistance junction–to–reference

= (case or ambient)

Junction Temperature (T

)

– This value represents the

maximum allowable junction temperature of the device. It is

derived and based off of long term Reliability data. Exceed-

ing this value will only serve to shorten the device’s long term

operating life.

Thermal Resistance (R

thjc

, R

thja

)

– The quantity that resists

or impedes the flow of heat energy in a device is called ther-

mal resistance. Thermal resistance values are needed for

proper thermal design. These values are measured as de-

tailed in Motorola Application Note AN1083.

Electrical Characteristics

The intent of this section in the data sheet is to provide de-

tailed device characterization so that the designer can pre-

dict with a high degree of accuracy the behavior of the device

in a specific application.

Drain–to–Source Breakdown Voltage (V

(BR)DSS

)

– As de-

scribed earlier, this represents the lower limit of the devices

blocking voltage capability from drain–to–source with the

gate shorted to the source. It is measured at a specific leak-

age current and has a positive temperature coefficient.

Zero Gate Voltage Drain Current (I

DSS

)

– The direct current

into the drain terminal of the device when the gate–to–source

voltage is zero and the drain terminal is reversed biased with

respect to the source terminal. This parameter generally in-

creases with temperature as shown in the “Drain–to–Source

Leakage Current versus Voltage” figure found in the device’s

data sheet.

Gate–Body Leakage Current (I

GSS

)

– The direct current

into the gate terminal of the device when the gate terminal is

biased with either a positive or negative voltage with respect

to the source terminal and the drain terminal is short–

circuited to the source terminal.

Gate Threshold Voltage (V

GS(th)

)

– The forward gate–to–

source voltage at which the magnitude of drain current has

been increased to some low threshold value, usually

specified as 250 µA or 1 mA. This parameter has a negative

temperature coefficient.

Drain–to–Source On–Resistance (R

DS(on)

)

– The dc resis-

tance between the drain–to–source terminals with a speci-

fied gate–to–source voltage applied to bias the device into

the on–state. This parameter has a positive temperature

coefficient.

Drain–to–Source On–Voltage (V

DS(on)

)

– The dc voltage

between the drain–to–source terminals with a specified

gate–to–source voltage applied to bias the device into the

on–state. This parameter has a positive temperature coeffi-

cient.

Forward Transconductance (g

)

– The ratio of the

change in drain current due to a change in gate–to–source

voltage (i.e., ∆ I

/∆ V

Device Capacitance (C

iss

, C

oss

, C

rss

)

– Power MOSFET

devices have internal parasitic capacitance from terminal–

to–terminal. This capacitance is voltage dependent as

shown by the “Capacitance Variation” figure on the device’s

data sheet. C

iss

is the capacitance between the gate–to–

source terminals with the drain terminal short–circuited to the

source terminal for alternating current. C

oss

is the capaci-

tance between the drain–to–source terminals with the gate

3–19

Introduction and Basic CharacteristicsMotorola TMOS Power MOSFET Transistors Device Data

short–circuited to the source terminal for alternating current.

rss

is the capacitance between the drain–to–gate terminals

with the source terminal connected to the guard terminal of a

three–terminal bridge (Ref. IEEE No. 255). Figures 3–2, 3–3

and 3–4 show test circuits used for Power MOSFET capaci-

tance measurements.

CAP.

METER

GUARD

–

L = 2.5 mH

0.1

µF

Figure 3–2. C

iss

Test Configuration

CAP.

METER

GUARD

–

Figure 3–3. C

oss

Test Configuration

CAP.

METER

GUARD

–

Figure 3–4. C

rss

Test Configuration

Resistive Switching (t

d(on)

, t

d(off)

, t

)

– MOSFET switch-

ing speeds are very fast, relative to comparably sized bipolar

transistors. They are tested and measured using a resistive

switching test circuit as shown in Figure 3–5. A typical

switching waveform showing parameter measurement points

is shown in Figure 3–6.

LOW

IMPEDANCE

DRIVER

PULSE

GENERATOR

GS(on)

–

MTP

3055V

Figure 3–5. Switching Test Circuit

OUTPUT, V

out

INVERTED

INPUT, V

10%

50%

90%

50%

90%

10%

d(off)

off

PULSE WIDTH

Figure 3–6. Switching Waveforms

Gate Charge (Q

, Q

)

– Gate charge values are used to

size the gate drive circuit and to estimate switching speeds

and switching losses. Q

is defined as the total gate charge

required to charge the device’s input capacitance to the ap-

plied gate voltage. Q1 is defined as the charge required to

charge the devices input capacitance to the V

GS(on)

required

to maintain the test current I

. The time required to deliver

this charge is called turn–on delay time. Q2 is defined as the

charge time required for the drain–to–source voltage to drop

to V

DS(on)

Forward On–Voltage (V

)

– The dc voltage between the

source–to–drain terminals when the power MOSFET’s intrin-

sic body diode is forward biased.

Reverse Recovery Time (t

, t

, Q

)

– The intrinsic

body diode of a power MOSFET is a minority carrier device

and thus has a finite reverse recovery time. T

is defined as

the time between the dropping I

current’s zero crossing

point to the peak I

. T

is defined as the time between the

peak I

to a projected I

zero current crossing point

through a 25% I

projection as shown in Figure 3–7. Total

reverse recovery time, t

, is defined as the sum of t

and t

is defined as the integral of the area made up by the I

waveform and V

, the reapplied blocking voltage which

forces reverse recovery.

Figure 3–7. Diode Reverse Recovery Waveform

di/dt

0.25 I

TIME

Introduction and Basic Characteristics

3–20

Motorola TMOS Power MOSFET Transistor Device Data

4–1

Motorola TMOS Power MOSFET Transistor Device Data

Data Sheets

Section Four

Device

Operating

Temperature Range

Package

SEMICONDUCTOR

TECHNICAL DATA

SINGLE IGBT

GATE DRIVER

ORDERING INFORMATION

MC33153D

MC33153P

= –40° to +105°C

SO–8

DIP–8

D SUFFIX

PLASTIC PACKAGE

CASE 751

(SO–8)

(Top View)

Current Sense

Input

Kelvin Gnd

Input

Fault Blanking/

Desaturation Input

Drive Output

PIN CONNECTIONS

P SUFFIX

PLASTIC PACKAGE

CASE 626

Fault Output

4–2

Motorola TMOS Power MOSFET Transistor Device Data

The MC33153 is specifcally designed as an IGBT driver for high power

applications that include ac induction motor control, brushless dc motor con-

trol and uninterruptable power supplies. Although designed for driving dis-

crete and module IGBTs, this device offers a cost effective solution for

driving power MOSFETs and Bipolar Transistors. Device protection features

include the choice of desaturation or overcurrent sensing and undervoltage

detection. These devices are available in dual–in–line and surface mount

packages and include the following features:

• High Current Output Stage: 1.0 A Source/2.0 A Sink

• Protection Circuits for Both Conventional and Sense IGBT’s

• Programmable Fault Blanking Time

• Protection against Overcurrent and Short Circuit

• Undervoltage Lockout Optimzed for IGBT’s

• Negative Gate Drive Capability

• Cost Effectively Drives Power MOSFETs and Bipolar Transistors

Representative Block Diagram

This device contains 133 active transistors.

Short Circuit

Latch

Overcurrent

Latch

Fault

Output

Current

Sense

Input

Kelvin

Gnd

Fault

Blanking/

Desaturation

Input

Drive

Output

Short Circuit

Comparator

Overcurrent

Comparator

Fault Blanking/

Desaturation

Comparator

Under

Voltage

Lockout

Input

4 5

130 mV

65 mV

270 mA

6.5 V

Output

Stage

12 V/

11 V

4–3

Motorola TMOS Power MOSFET Transistor Device Data

MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage V

to V

– V

Kelvin Ground to V

KGnd – V

Logic Input V

–0.3 to V

Current Sense Input V

–0.3 to V

Blanking/Desaturation Input V

–0.3 to V

Gate Drive Output

Source Current

Sink Current

Diode Clamp Current

1.0

2.0

1.0

Fault Output

Source Current

Sink Curent

Power Dissipation and Thermal Characteristics

D Suffix SO–8 Package, Case 751

Maximum Power Dissipation @ T

= 50°C

Thermal Resistance, Junction–to–Air

P Suffix DIP–8 Package, Case 626

Maximum Power Dissipation @ T

= 50°C

Thermal Resistance, Junction–to–Air

θJA

0.56

180

1.0

100

°C/W

Operating Junction Temperature T

+150 °C

Operating Ambient Temperature T

–40 to +105 °C

Storage Temperature Range T

stg

–65 to +150 °C

ELECTRICAL CHARACTERISTICS (V

= 15 V, V

= 0 V, Kelvin Gnd connected to V

. For typical values

= 25°C, for min/max values T

is the operating ambient temperature range that applies (Note 1), unless otherwise noted.)

Characteristic

Symbol Min Typ Max Unit

LOGIC INPUT

Input Threshold Voltage

High State (Logic 1)

Low State (Logic 0)

–

1.2

2.70

2.30

3.2

–

Input Current

High State (V

= 3.0 V)

Low State (V

= 1.2 V)

–

130

500

100

µA

DRIVE OUTPUT

Output Voltage

Low State (I

Sink

= 1.0 A)

High State (I

Source

= 500 mA)

–

2.0

13.9

2.5

–

Output Pull–Down Resistor R

– – 200 kΩ

FAULT OUTPUT

Output voltage

Low State (I

Sink

= 5.0 mA)

High State (I

Source

= 20 mA)

–

0.2

13.3

1.0

–

SWITCHING CHARACTERISTICS

Propagation Delay (50% Input to 50% Output C

= 1.0 nF)

Logic Input to Drive Output Rise

Logic Input to Drive Output Fall

PLH(in/out)

PHL

(in/out)

–

120

300

Drive Output Rise Time (10% to 90%) C

= 1.0 nF t

– 17 55 ns

Drive Output Fall Time (90% to 10%) C

= 1.0 nF t

– 17 55 ns

Propagation Delay µs

Current Sense Input to Drive Output t

P(OC)

– 0.3 1.0

NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

low

= –40°C for MC33153 T

high

= +105°C for MC33153

4–4

Motorola TMOS Power MOSFET Transistor Device Data

ELECTRICAL CHARACTERISTICS (continued)

= 15 V, V

= 0 V, Kelvin Gnd connected to V

. For typical values

= 25°C, for min/max values T

is the operating ambient temperature range that applies (Note 1), unless otherwise noted.)

Characteristic UnitMaxTypMinSymbol

SWITCHING CHARACTERISTICS (continued)

Fault Blanking/Desaturation Input to Drive Output t

P(FLT)

– 0.3 1.0

UVLO

Startup Voltage V

start

– 12 12.6 V

Disable Voltage V

dis

10.4 11 – V

COMPARATORS

Overcurrent Threshold Voltage (V

Pin8

> 7.0 V) V

SOC

50 65 80 mV

Short Circuit Threshold Voltage (V

Pin8

> 7.0 V) V

SSC

100 130 160 mV

Fault Blanking/Desaturation Threshold (V

Pin1

> 100 mV) V

th(FLT)

6.0 6.5 7.0 V

Current Sense Input Current (V

= 0 V) I

– –1.4 –10 µA

FAULT BLANKING/DESATURATION INPUT

Current Source (V

Pin8

= 0 V, V

Pin4

= 0 V) I

chg

–200 –270 –300 µA

Discharge Current (V

Pin8

= 15 V, V

Pin4

= 5.0 V) I

dschg

1.0 2.5 – mA

TOTAL DEVICE

Power Supply Current

Standby (V

= V

, Output Open)

Operating (C

= 1.0 nF, f = 20 kHz)

–

7.2

7.9

NOTE: 1. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

low

= –40°C for MC33153 T

high

= +105°C for MC33153

1.5

, OUTPUT VOLTAGE (V)

, INPUT VOLTAGE (V)

URRE

)

Figure 1. Input Current versus Input Voltage

, INPUT VOLTAGE (V)

Figure 2. Output Voltage versus Input Voltage

= 15 V

= 25°C

= 15 V

= 25°C

1.0

0.5

2.0 4.0 6.0 8.0 10 12 14 16

8.0

6.0

4.0

2.0

1.0 2.0 3.0 4.0

5.0

4–5

Motorola TMOS Power MOSFET Transistor Device Data

, DRIVE OUTPUT HIGH STATE VOLTAGE (V)

, D

(

)

15.0

2.0

2.8

–60

14.0

–60

2.5

–60

3.2

urc

, OUTPUT SOURCE CURRENT (A)

= 15 V

= 25°C

Sink

, OUTPUT SINK CURRENT (A)

= 25°C

= 15 V

, SUPPLY VOLTAGE (V)

, AMBIENT TEMPERATURE (°C)

= 15 V

Source

= 500 mA

, O

OW S

(

)

, AMBIENT TEMPERATURE (°C)

Sink

= 1.0 A

Figure 3. Input Threshold Voltage

versus Temperature

, AMBIENT TEMPERATURE (°C)

Figure 4. Input Threshold Voltage

versus Supply Voltage

Figure 5. Drive Output Low State Voltage

versus Temperature

Figure 6. Drive Output Low State Voltage

versus Sink Current

Figure 7. Drive Output High State Voltage

versus Temperature

Figure 8. Drive Output High State Voltage

versus Source Current

= 25°C

= 15 V

– V

, INPUT THRESHOLD VOLTAGE (V)V

–

THRE

D VO

(

)

, OUTPUT LOW STATE VOLTAGE (V)

= 500 mA

= 250 mA

= 15 V

3.0

2.8

2.6

2.4

2.2

2.0

–40 –20 0 20 40 60 80 100 120 140

2.7

2.6

2.5

2.4

2.3

2.2

13 14 15 16 17 18 19 20

2.0

1.5

1.0

0.5

–40 –20 0 20 40 60 80 100 120 140

1.6

1.2

0.8

0.2 0.4 0.6 0.8 1.0

–40 –20 0 20 40 60 80 100 120 140

13.9

13.8

13.7

13.6

13.5

14.6

14.2

13.8

13.0

0.1 0.2 0.3 0.4 0.5

0.4

13.4

4–6

Motorola TMOS Power MOSFET Transistor Device Data

SSC

, SHORT CIRCUIT THRESHOLD VOLTAGE (mV) V

SOC

, OVERCURRENT THRESHOLD VOLTAGE (mV)

135

100

–60

135

–60

, SUPPLY VOLTAGE (V)

= 25°C

, SUPPLY VOLTAGE (V)

= 25°C

Pin 7

, FAULT OUTPUT VOLTAGE (V)

, CURRENT SENSE INPUT VOLTAGE (V)

SSC

, S

UIT

THRE

D VO

)

, AMBIENT TEMPERATURE (°C)

= 15 V

SOC

, OV

URRE

THRE

D VO

)

, AMBIENT TEMPERATURE (°C)

= 15 V

, D

(

)

Figure 9. Drive Output Voltage

versus Current Sense Input Voltage

, CURRENT SENSE INPUT VOLTAGE (mV)

Figure 10. Fault Output Voltage

versus Current Sense Input Voltage

Figure 11. Overcurrent Protection Threshold

Voltage versus Temperature

Figure 12. Overcurrent Protection Threshold

Voltage versus Supply Voltage

Figure 13. Short Circuit Comparator Threshold

Voltage versus Temperature

Figure 14. Short Circuit Comparator Threshold

Voltage versus Supply Voltage

= 15 V

= 0 V

> 7.0 V

= 25°C

= 15 V

= 0 V

> 7.0 V

= 25°C

8.0

6.0

4.0

2.0

55 60 65 70 75 80

8.0

6.0

4.0

2.0

110 120 130 140 150 160

–40 –20 0 20 40 60 80 100 120 140

14 16 18 20

130

125

–40 –20 0 20 40 60 80 100 120 140 14 16 18 20

130

125

4–7

Motorola TMOS Power MOSFET Transistor Device Data

, CURRENT SOURCE ( A)I

chg

, CURRENT SOURCE ( A)

BDT

, FAULT BLANKING/DESATURATION

5.0

–200

6.6

6.0

–60

–200

–60

6.6

, SUPPLY VOLTAGE (V)

= 0 V

= 25°C

, SUPPLY VOLTAGE (V)

= 0 V

> 100 mV

= 25°C

, DRIVE OUTPUT VOLTAGE (V)

, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

= 15 V

= 0 V

> 100 mV

= 25°C

chg

, AMBIENT TEMPERATURE (°C)

= 15 V

= 0 V

BDT

, FA

ULT

ANK

NG/D

TUR

, AMBIENT TEMPERATURE (°C)

= 15 V

= 0 V

> 100 mV

, CURRENT SENSE INPUT CURRENT ( A)µ

Figure 15. Current Sense Input Current

versus Voltage

, CURRENT SENSE INPUT VOLTAGE (V)

Figure 16. Drive Output Voltage versus Fault

Blanking/Desaturation Input Voltage

= 15 V

= 25°C

Figure 17. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Temperature

Figure 18. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Supply Voltage

Figure 19. Fault Blanking/Desaturation Current

Source versus Temperature

Figure 20. Fault Blanking/Desaturation Current

Source versus Supply Voltage

THRESHOLD VOLTAGE (V)

8.0

6.0

4.0

2.0

6.2 6.4 6.6 6.8 7.0

–0.5

–1.0

–1.5

4.0 6.0 8.0 10 12 14 162.0

6.5

6.4

–20 0 20 40 60 80 100 120 140–40

6.5

6.4

14 16 18 20

–220

–240

–260

–280

–300

–20 0 20 40 60 80 100 120 140–40 15 2010

–220

–240

–260

–280

–300