Справочник по мощным TMOS транзисторам (MOTOROLA)
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4–28
Motorola TMOS Power MOSFET Transistor Device Data
T
J
= 25°C
Figure 7. Total Switching Losses versus
Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
1
50302010 40
Figure 8. Total Switching Losses versus
Case Temperature
2.5
2
V
CC
= 720 V
V
GE
= 15 V
T
J
= 125°C
I
C
= 10 A
T
C
, CASE TEMPERATURE (°C)
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.6
0.2
1507525
0
100
1.8
1
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
50 125
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.4
1.8
1
10975
2
1.6
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
T
J
= 125°C
1.2
8
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
V
FM
, FORWARD VOLTAGE DROP (VOLTS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
25
15
0
43102
I
C
= 10 A
1.5
1.4
20
7.5 A
5 A
7.5 A
5 A
3
2.2
1.4
0.6
2.8
0.4
2
1.2
2.4
1.6
0.8
6
2.2
10
5
T
J
= 125°C
F
I
C
, COLLECTOR–TO–EMITTER CURRENT (A)
Figure 11. Reverse Biased
Safe Operating Area
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
10001
1
10010
V
GE
= 15 V
R
GE
= 20 Ω
T
J
≤ 125°C
10000
4–29
Motorola TMOS Power MOSFET Transistor Device Data
Figure 12. Thermal Response
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
4–30
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 160 J per Amp typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
1200 Vdc
Collector–Gate Voltage (R
GE
= 1.0 MΩ) V
CGR
1200 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ T
C
= 25°C
— Continuous @ T
C
= 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
20
12
40
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
123
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(V
CC
= 720 Vdc, V
GE
= 15 Vdc, T
J
= 125°C, R
G
= 20 Ω)
t
sc
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θJC
R
θJC
R
θJA
1.0
1.4
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
4–31
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 25 µAdc)
Temperature Coefficient (Positive)
BV
CES
1200
—
—
870
—
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc)
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc, T
J
= 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (V
GE
= ± 20 Vdc, V
CE
= 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V
GE
= 15 Vdc, I
C
= 5.0 Adc)
(V
GE
= 15 Vdc, I
C
= 5.0 Adc, T
J
= 125°C)
(V
GE
= 15 Vdc, I
C
= 10 Adc)
V
CE(on)
—
—
—
2.71
3.78
3.72
3.37
—
4.42
Vdc
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 10 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
ies
— 1003 — pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oes
— 126 —
Transfer Capacitance
f
1.0
MHz)
C
res
— 106 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(V
CC
= 720 Vdc I
C
=10Adc
t
d(on)
— 74 — ns
Rise Time
(V
CC
=
720
Vdc
,
I
C
=
10
Adc
,
V
GE
= 15 Vdc, L = 300 H
t
r
— 83 —
Turn–Off Delay Time
GE
,
R
G
= 20 Ω, T
J
= 25°C)
Energy losses include
“
tail
”
t
d(off)
— 76 —
Fall Time
Energy
losses
include
tail
t
f
— 231 —
Turn–Off Switching Loss E
off
— 0.55 1.33 mJ
Turn–On Switching Loss E
on
— 1.21 1.88
Total Switching Loss E
ts
— 1.76 3.21
Turn–On Delay Time
(V
CC
= 720 Vdc I
C
=10Adc
t
d(on)
— 66 — ns
Rise Time
(V
CC
=
720
Vdc
,
I
C
=
10
Adc
,
V
GE
= 15 Vdc, L = 300 H
t
r
— 87 —
Turn–Off Delay Time
GE
,
R
G
= 20 Ω, T
J
= 125°C)
Energy losses include
“
tail
”
t
d(off)
— 120 —
Fall Time
Energy
losses
include
tail
t
f
— 575 —
Turn–Off Switching Loss E
off
— 1.49 — mJ
Turn–On Switching Loss E
on
— 2.37 —
Total Switching Loss E
ts
— 3.86 —
Gate Charge
(V 720 Vd I 10 Ad
Q
T
— 29 — nC
(V
CC
= 720 Vdc, I
C
= 10 Adc,
V
GE
= 15 Vdc
)
Q
1
— 13 —
V
GE
15
Vdc)
Q
2
— 12 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(I
EC
= 5.0 Adc)
(I
EC
= 5.0 Adc, T
J
= 125°C)
(I
EC
= 10 Adc)
V
FEC
—
—
—
2.26
1.37
2.86
3.32
—
4.18
Vdc
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)
4–32
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
t
rr
— 116 —
ns
(I
F
= 10 Adc, V
R
= 720 Vdc,
t
a
— 69 —
(
FR
dI
F
/dt = 100 A/µs)
t
b
— 47 —
Reverse Recovery Stored Charge Q
RR
— 0.36 — µC
Reverse Recovery Time
t
rr
— 234 —
ns
(I
F
= 10 Adc, V
R
= 720 Vdc,
t
a
— 149 —
(
FR
dI
F
/dt = 100 A/µs, T
J
= 125°C)
t
b
— 85 —
Reverse Recovery Stored Charge Q
RR
— 1.40 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
V
GE
= 20 V
T
J
= 25°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
7.5 V
30
20
0
8402 6
40
10
7315
V
GE
= 20 V
T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
8402 6
40
10
7315
V
CE
= 10 V
250 µs PULSE WIDTH
T
J
= 125°C
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
24
8
4
0
1597511
25°C
V
GE
= 15 V
250 µs PULSE WIDTH
T
J
, JUNCTION TEMPERATURE (°C)
3.8
3.2
2
150500–50
2.6
100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
= 10 A
16
7.5 A
13
5 A
12
20
2.2
2.4
2.8
3.0
3.4
3.6
4–33
Motorola TMOS Power MOSFET Transistor Device Data
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter and
Collector–to–Emitter Voltage versus Total Charge
C
oes
10000
10
25201550
Q
g
, TOTAL GATE CHARGE (nC)
16
8
0
80200
C, CAPACITANCE (pF)
10
T
J
= 25°C
C
res
C
ies
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
Q
1
Q
2
T
J
= 25°C
I
C
= 20 A
100
6040
12
1000
Figure 7. Total Switching Losses versus
Gate Resistance
Figure 8. Total Switching Losses versus
Case Temperature
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
R
G
, GATE RESISTANCE (OHMS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
1
50302010 40
2.5
2
V
CC
= 720 V
V
GE
= 15 V
T
J
= 125°C
I
C
= 10 A
T
C
, CASE TEMPERATURE (°C)
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.6
0.2
1507525
0
100
1.8
1
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
50 125
I
C
= 10 A
1.5
7.5 A
5 A
7.5 A
5 A
3
2.2
1.4
0.6
2.8
0.4
2
1.2
2.4
1.6
0.8
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.4
1.8
1
10975
2
1.6
V
CC
= 720 V
V
GE
= 15 V
R
G
= 20 Ω
T
J
= 125°C
1.2
8
1.4
6
2.2
Figure 5b. High Voltage Capacitance
Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
C
oes
10
20015050
C, CAPACITANCE (pF)
100
T
J
= 25°C
C
res
C
ies
100
1000
V
GE
= 0 V
4–34
Motorola TMOS Power MOSFET Transistor Device Data
I
C
, COLLECTOR–TO–EMITTER CURRENT (A)
V
GE
= 15 V
R
GE
= 20 Ω
T
J
= 125°C
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
Figure 11. Reverse Biased
Safe Operating Area
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
10001
1
10010
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
0.1
0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.02
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
0.2
Figure 12. Thermal Response
T
J
= 25°C
V
FM
, FORWARD VOLTAGE DROP (VOLTS)
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
25
15
0
43102
20
10
5
T
J
= 125°C
F
4–35
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Co–packaged IGBT’s save space, reduce assembly time and cost.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 60 J per Amp typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Soft Recovery Free Wheeling Diode is included in the package
• Robust High Voltage Termination
• Robust RBSOA
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector–Emitter Voltage V
CES
600 Vdc
Collector–Gate Voltage (R
GE
= 1.0 MΩ) V
CGR
600 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ T
C
= 25°C
— Continuous @ T
C
= 90°C
— Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
32
20
64
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
142
1.14
Watts
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(V
CC
= 360 Vdc, V
GE
= 15 Vdc, T
J
= 25°C, R
G
= 20 Ω)
t
sc
10
s
Thermal Resistance — Junction to Case – IGBT
— Junction to Case – Diode
— Junction to Ambient
R
θJC
R
θJC
R
θJA
0.88
2.00
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
IGBT & DIODE IN TO–247
20 A @ 90°C
32 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
4–36
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 250 µAdc)
Temperature Coefficient (Positive)
BV
CES
600
—
—
870
—
—
Vdc
mV/°C
Zero Gate Voltage Collector Current
(V
CE
= 600 Vdc, V
GE
= 0 Vdc)
(V
CE
= 600 Vdc, V
GE
= 0 Vdc, T
J
= 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (V
GE
= ± 20 Vdc, V
CE
= 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V
GE
= 15 Vdc, I
C
= 10 Adc)
(V
GE
= 15 Vdc, I
C
= 10 Adc, T
J
= 125°C)
(V
GE
= 15 Vdc, I
C
= 20 Adc)
V
CE(on)
—
—
—
2.30
2.20
2.85
2.85
—
3.65
Vdc
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 20 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
ies
— 2280 — pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oes
— 165 —
Transfer Capacitance
f
1.0
MHz)
C
res
— 12 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
(V
CC
= 360 Vdc I
C
=20Adc
t
d(on)
— 59 — ns
Rise Time
(V
CC
=
360
Vdc
,
I
C
=
20
Adc
,
V
GE
= 15 Vdc, L = 300 H
t
r
— 61 —
Turn–Off Delay Time
GE
,
R
G
= 20 Ω, T
J
= 25°C)
Energy losses include
“
tail
”
t
d(off)
— 150 —
Fall Time
Energy
losses
include
tail
t
f
— 212 —
Turn–Off Switching Loss E
off
— 0.60 0.85 mJ
Turn–On Switching Loss E
on
— 0.75 —
Total Switching Loss E
ts
— 1.35 —
Turn–On Delay Time
(V
CC
= 360 Vdc I
C
=20Adc
t
d(on)
— 51 — ns
Rise Time
(V
CC
=
360
Vdc
,
I
C
=
20
Adc
,
V
GE
= 15 Vdc, L = 300 H
t
r
— 77 —
Turn–Off Delay Time
GE
,
R
G
= 20 Ω, T
J
= 125°C)
Energy losses include
“
tail
”
t
d(off)
— 184 —
Fall Time
Energy
losses
include
tail
t
f
— 392 —
Turn–Off Switching Loss E
off
— 1.20 — mJ
Turn–On Switching Loss E
on
— 1.50 —
Total Switching Loss E
ts
— 2.70 —
Gate Charge
(V 360 Vd I 20 Ad
Q
T
— 74 — nC
(V
CC
= 360 Vdc, I
C
= 20 Adc,
V
GE
= 15 Vdc
)
Q
1
— 19 —
V
GE
15
Vdc)
Q
2
— 27 —
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(I
EC
= 10 Adc)
(I
EC
= 10 Adc, T
J
= 125°C)
(I
EC
= 20 Adc)
V
FEC
—
—
—
1.50
1.30
1.70
1.90
—
2.15
Vdc
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (continued)
4–37
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS — continued (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
t
rr
— 117 —
ns
(I
F
= 20 Adc, V
R
= 360 Vdc,
t
a
— 70 —
(
FR
dI
F
/dt = 200 A/µs)
t
b
— 47 —
Reverse Recovery Stored Charge Q
RR
— 1.2 — µC
Reverse Recovery Time
t
rr
— 166 —
ns
(I
F
= 20 Adc, V
R
= 360 Vdc,
t
a
— 98 —
(
FR
dI
F
/dt = 200 A/µs, T
J
= 125°C)
t
b
— 68 —
Reverse Recovery Stored Charge Q
RR
— 1.9 — µC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
V
CE
= 100 V
5 µs PULSE WIDTH
V
GE
= 20 VT
J
= 25°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
Figure 3. Transfer Characteristics
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
40
20
0
840
V
GE
= 20 V
T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
40
20
0
86420
T
J
= 125°C
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
40
20
10
0
1187659
25°C
V
GE
= 15 V
80 µs PULSE WIDTH
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
3.2
2.8
2
150500–50
2.4
100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
26
I
C
= 20 A
60 60
30
15 A
TYPICAL ELECTRICAL CHARACTERISTICS
10
10 A