2–1
Selector GuideMotorola TMOS Power MOSFET Transistors Device Data
TMOS Power MOSFETs
Products Selector Guide
Section Two
In Brief . . .
Motorola continues to build a world class portfolio of
TMOS Power MOSFETs with new advances in silicon and
packaging technology. The following new advances have
been made in the area of silicon technology.
• Additional high voltage devices with voltages up to
1200 volts.
• The new High Cell Density (HDTMOS) Family of standard
and Logic Level devices in both N and P-channel are
available in SO–8, DPAK and D
2
PAK surface mount
packages and in the industry standard TO-220 package.
The following new advances have been made in the area
of packaging technology.
• Motorola has added Micro8, SO-8 (MiniMOS) and
SOT-223 packages to the surface mount portfolio.
• New High Power packages capable of housing very large
die and higher power dissipation are now available in the
TO-264 (TO-3PBL) and SOT-227B (ISOTOP) packages.
Table of Contents
Page
TMOS Power MOSFETs 2–1. . . . . . . . . . . . . . . . . . . . . . . . . . .
TMOS Power MOSFETs Numbering System 2–2. . . . . . .
SO–8 (MiniMOS) 2–3. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Micro8 HDTMOS Products 2–3. . . . . . . . . . . . . . . . . . . . .
EZFET — Power MOSFETs with Zener Gate
Protection 2–4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOT–223 2–4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DPAK 2–4. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
2
PAK 2–5. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
3
PAK 2–6. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO–220AB 2–7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TO–247 (Isolated Mounting Hole) 2–8. . . . . . . . . . . . . . . . .
TO–264 2–8. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOT–227B (ISOTOP) 2–9. . . . . . . . . . . . . . . . . . . . . . . . . .
SMARTDISCRETES 2–9. . . . . . . . . . . . . . . . . . . . . . . . . . .
IGBT — Insulated Gate Bipolar Transistor 2–10. . . . . . . .
Power MOS Gate Drivers 2–10. . . . . . . . . . . . . . . . . . . . . .