Справочник по мощным TMOS транзисторам (MOTOROLA)
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4–18
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Gate–to–Emitter and
Collector–to–Emitter Voltage vs Total Charge
Figure 8. Total Switching Losses
versus Gate Temperature
Q
g
, TOTAL GATE CHARGE (nC)
V
GE
, GA
TE–T
O
–E
M
ITTER
VO
LT
AG
E
(
VO
LT
S
)
R
G
, GATE RESISTANCE (OHMS)
0 1000
40
30
20
10
0
50
6
0
010
8
6
4
2
0
Figure 9. Total Switching Losses
versus Gate Resistance
Figure 10. Total Switching Losses
versus Case Temperature
R
G
, GATE RESISTANCE (OHMS)
T
O
T
A
L
SW
IT
C
HI
NG
E
N
ER
GY
L
OSS
E
S
(mJ)
T
C
, CASE TEMPERATURE (°C)
25 50 125
20
18
16
14
12
22
24
26
75 1000 1000
50
40
30
20
10
0
Figure 11. Total Switching Losses
versus Collector Current
Figure 12. Latch Current versus Temperature
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
O
T
A
L
SW
IT
C
HI
NG
E
N
ER
GY
L
OSS
E
S
(mJ)
LATCH CURRENT (AMPS)
TEMPERATURE (°C)
025
16
12
8.0
4.0
0
20
50 75 100 1255101520
25
20
15
10
5
2000 3000 4000 5000
20 30 40 2000 3000 4000 5000
SWITCHING TIME ( S) SWITCHING TIME ( S)
25
20
15
10
5
SW
IT
C
HI
NG
TI
M
E
(
S
)
6
0
50
40
20
0
SW
IT
C
HI
NG
TI
M
E
(
S
)
6
4
10
30
6
5
4
3
2
1
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
10 mH
3 mH
V
CC
= 320 V
V
GE
= 5 V
R
G
= 1000
L = 200 H
T
J
= 125°C
V
DD
= 320 V
V
GE
= 5 V
T
J
= 25°C
I
C
= 20 A
T
F
T
d(off)
E
off
T
F
T
d(off)
E
off
V
CC
= 320 V
V
GE
= 5 V
R
G
= 1000
L = 200 H
I
C
= 20 A
T
F
T
d(off)
E
off
V
DD
= 320 V
V
GE
= 5 V
T
J
= 125°C
I
C
= 20 A
T
F
T
d(off)
E
off
T
J
= 25°C
I
C
= 20 A
Q
g
Q
gs
Q
gd
4–19
Motorola TMOS Power MOSFET Transistor Device Data
Figure 13. Thermal Response
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.1
1
.0
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
D = 0.5
0.02
0.2
0.05
0.1
SINGLE PULSE
0.01
4–20
Motorola TMOS Power MOSFET Transistor Device Data
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
CLAMPED Vdc
Collector–Gate Voltage V
CGR
CLAMPED Vdc
Gate–Emitter Voltage V
GE
CLAMPED Vdc
Collector Current — Continuous @ T
C
= 25°C I
C
20 Adc
Reversed Collector Current – pulse width 100 s
I
CR
12 Apk
Total Power Dissipation @ T
C
= 25°C (TO–220) P
D
150 Watts
Electrostatic Voltage — Gate–Emitter ESD 3.5 kV
Operating and Storage Temperature Range T
J
, T
stg
–55 to 175 °C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
— Junction to Ambient
R
JC
R
JA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
275 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting T
J
= 25°C
@ Starting T
J
= 150°C
E
AS
550
150
mJ
This document contains information on a new product. Specifications and information herein are subject to change without notice.
SEMICONDUCTOR TECHNICAL DATA
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
V
ce(on)
= 1.8 VOLTS
400 VOLTS (CLAMPED)
CASE 221A–06, Style 9
TO–220AB
G
C
E
C
G
E
Rge
4–21
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(I
Clamp
= 10 mA, T
J
= –40 to 150°C)
B
VCES
380 405 440
Vdc
Zero Gate Voltage Collector Current
(V
CE
= 300 V, V
GE
= 0 V, T
J
= 125°C)
(V
CE
= 15 V, V
GE
= 0 V, T
J
= 125°C)
I
CES
—
—
—
—
1.0
200
mA
A
Resistance Gate–Emitter (T
J
= –40 to 150°C) R
GE
10k 16k 30k
Gate–Emitter Breakdown Voltage (I
G
= 2 mA) B
VGES
11 13 15 V
Collector–Emitter Reverse Leakage (V
CE
= –15 V, T
J
= –40 to 150°C) I
CES
— — — mA
Collector–Emitter Reversed Breakdown Voltage (I
E
= 75 mA) B
VCER
26 40 120 V
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1 mA)
(V
CE
= V
GE
, I
C
= 1 mA, T
J
= 150°C)
V
GE(th)
1.0
0.75
1.7
—
2.4
1.8
V
Collector–Emitter On–Voltage
(V
GE
= 5 V, I
C
= 5 A)
(V
GE
= 5 V, I
C
= 10 A)
(V
GE
= 5 V, I
C
= 10 Adc, T
J
= 150°C)
V
CE(on)
—
—
—
1.1
1.4
1.4
1.4
1.9
1.8
V
Forward Transconductance (V
CE
50 V, I
C
= 10 A) g
fs
10 16 — S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
iss
— 2800 —
pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oss
— 200 —
Transfer Capacitance
f
1.0
MHz)
C
rss
— 25 —
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
(V 280 V I 20 A
Q
g
— 45 80
nC
Gate–Emitter Charge
(V
CC
= 280 V, I
C
= 20 A,
V
GE
= 5 V
)
Q
gs
— 8.0 —
Gate–Collector Charge
V
GE
5
V)
Q
gd
— 20 —
Turn–Off Delay Time
(V
CC
= 320 V, I
C
= 20 A,
t
d(off)
— TBD TBD
µs
Fall Time
(
CC C
L = 200 H, R
G
= 1 K )
t
f
— TBD TBD
Turn–On Delay Time
(V
CC
= 14 V, I
C
= 20 A,
t
d(on)
— TBD TBD µs
Rise Time
(
CC C
L = 200 H, R
G
= 1 K )
t
r
— TBD TBD
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4–22
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
V
GE
= 10 V T
J
= 125°C
0123 8
20
10
0
30
4
0
4567024 68
4
0
30
20
10
0
3 V
Figure 3. Transfer Characteristics Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 125°C
V
GE
= 5 V
–50 0 150
1.8
1.4
1.2
1.0
1.6
2.0
2.2
50 10012345
40
30
20
10
0
Figure 5. Capacitance Variation Figure 6. High Voltage Capacitance Variation
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
DRAIN–TO–SOURCE VOLTAGE (VOLTS)
10
1000
10
1.0
100
1000
10005075
10000
1000
100
10
1.0
10 9 10
25 100 125 150 175 200
C, CAPACITANCE (pF)
V
GE
= 10 V
5 V
4 V
3 V
5 V
4 V
25°C
V
CE
= 10 V
I
C
= 20 A
15 A
10 A
T
J
= 25°C
V
CE
= 0 V
T
J
= 25°C
V
GS
= 0 V
C
iss
C
oss
C
rss
C
iss
C
oss
C
rss
4–23
Motorola TMOS Power MOSFET Transistor Device Data
Figure 7. Gate–to–Emitter and
Collector–to–Emitter Voltage vs Total Charge
Figure 8. Total Switching Losses
versus Gate Temperature
Q
g
, TOTAL GATE CHARGE (nC)
V
GE
, GA
TE–T
O
–E
M
ITTER
VO
LT
AG
E
(
VO
LT
S
)
R
G
, GATE RESISTANCE (OHMS)
0 1000
40
30
20
10
0
50
6
0
010
8
6
4
2
0
Figure 9. Total Switching Losses
versus Gate Resistance
Figure 10. Total Switching Losses
versus Case Temperature
R
G
, GATE RESISTANCE (OHMS)
T
O
T
A
L
SW
IT
C
HI
NG
E
N
ER
GY
L
OSS
E
S
(mJ)
T
C
, CASE TEMPERATURE (°C)
25 50 125
20
18
16
14
12
22
24
26
75 1000 1000
50
40
30
20
10
0
Figure 11. Total Switching Losses
versus Collector Current
Figure 12. Latch Current versus Temperature
I
C
, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
O
T
A
L
SW
IT
C
HI
NG
E
N
ER
GY
L
OSS
E
S
(mJ)
LATCH CURRENT (AMPS)
TEMPERATURE (°C)
025
16
12
8.0
4.0
0
20
50 75 100 1255101520
25
20
15
10
5
2000 3000 4000 5000
20 30 40 2000 3000 4000 5000
SWITCHING TIME ( S) SWITCHING TIME ( S)
25
20
15
10
5
SW
IT
C
HI
NG
TI
M
E
(
S
)
6
0
50
40
20
0
SW
IT
C
HI
NG
TI
M
E
(
S
)
6
4
10
30
6
5
4
3
2
1
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
TOTAL SWITCHING ENERGY LOSSES (mJ)
10 mH
3 mH
V
CC
= 320 V
V
GE
= 5 V
R
G
= 1000
L = 200 H
T
J
= 125°C
V
DD
= 320 V
V
GE
= 5 V
T
J
= 25°C
I
C
= 20 A
T
F
T
d(off)
E
off
T
F
T
d(off)
E
off
V
CC
= 320 V
V
GE
= 5 V
R
G
= 1000
L = 200 H
I
C
= 20 A
T
F
T
d(off)
E
off
V
DD
= 320 V
V
GE
= 5 V
T
J
= 125°C
I
C
= 20 A
T
F
T
d(off)
E
off
T
J
= 25°C
I
C
= 20 A
Q
g
Q
gs
Q
gd
4–24
Motorola TMOS Power MOSFET Transistor Device Data
Figure 13. Thermal Response
t, TIME (s)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
– T
C
= P
(pk)
R
θJC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
0.1
1
.0
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+00 1.0E+01
D = 0.5
0.02
0.2
0.05
0.1
SINGLE PULSE
0.01
4–25
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
• Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
• High Speed E
off
: 160 J/A typical at 125°C
• High Short Circuit Capability – 10 s minimum
• Robust High Voltage Termination
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector–Emitter Voltage V
CES
1200 Vdc
Collector–Gate Voltage (R
GE
= 1.0 MΩ) V
CGR
1200 Vdc
Gate–Emitter Voltage — Continuous V
GE
±20 Vdc
Collector Current — Continuous @ T
C
= 25°C
Collector Current — Continuous @ T
C
= 90°C
Collector Current — Repetitive Pulsed Current (1)
I
C25
I
C90
I
CM
20
12
40
Adc
Apk
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
123
0.98
Watts
W/°C
Operating and Storage Junction Temperature Range T
J
, T
stg
–55 to 150 °C
Short Circuit Withstand Time
(V
CC
= 720 Vdc, V
GE
= 15 Vdc, T
J
= 125°C, R
G
= 20 Ω)
t
sc
10
s
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
R
θJC
R
θJA
1.0
45
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
260 °C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
4–26
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(V
GE
= 0 Vdc, I
C
= 25 µAdc)
Temperature Coefficient (Positive)
BV
CES
1200
—
—
870
—
—
Vdc
mV/°C
Emitter–to–Collector Breakdown Voltage (V
GE
= 0 Vdc, I
EC
= 100 mAdc) BV
ECS
25 — — Vdc
Zero Gate Voltage Collector Current
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc)
(V
CE
= 1200 Vdc, V
GE
= 0 Vdc, T
J
= 125°C)
I
CES
—
—
—
—
100
2500
µAdc
Gate–Body Leakage Current (V
GE
= ± 20 Vdc, V
CE
= 0 Vdc) I
GES
— — 250 nAdc
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(V
GE
= 15 Vdc, I
C
= 5.0 Adc)
(V
GE
= 15 Vdc, I
C
= 5.0 Adc, T
J
= 125°C)
(V
GE
= 15 Vdc, I
C
= 10 Adc)
V
CE(on)
—
—
—
2.51
2.36
3.21
3.37
—
4.42
Vdc
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
V
GE(th)
4.0
—
6.0
10
8.0
—
Vdc
mV/°C
Forward Transconductance (V
CE
= 10 Vdc, I
C
= 10 Adc) g
fe
— 12 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0 Vd
C
ies
— 930 — pF
Output Capacitance
(V
CE
= 25 Vdc, V
GE
= 0 Vdc,
f = 1.0 MHz
)
C
oes
— 126 —
Transfer Capacitance
f
1.0
MHz)
C
res
— 16 —
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time t
d(on)
— 74 — ns
Rise Time
(V
CC
= 720 Vdc, I
C
= 10 Adc,
V 15 Vd L 300 H
t
r
— 83 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 2
0
Ω
,
T
J
= 2
5
°
C)
t
d(off)
— 76 —
Fall Time
R
G
=
20
Ω
,
T
J
=
25 C)
Energy losses include “tail”
t
f
— 231 —
Turn–Off Switching Loss E
off
— 0.55 1.33 mJ
Turn–On Delay Time t
d(on)
— 66 — ns
Rise Time
(V
CC
= 720 Vdc, I
C
= 10 Adc,
V 15 Vd L 300 H
t
r
— 87 —
Turn–Off Delay Time
V
GE
= 15 Vdc, L = 300 H
R
G
= 2
0
Ω
,
T
J
= 12
5
°
C)
t
d(off)
— 120 —
Fall Time
R
G
=
20
Ω
,
T
J
=
125 C)
Energy losses include “tail”
t
f
— 575 —
Turn–Off Switching Loss E
off
— 1.49 — mJ
Gate Charge
(V 720 Vd I 10 Ad
Q
T
— 31 — nC
(V
CC
= 720 Vdc, I
C
= 10 Adc,
V
GE
= 15 Vdc
)
Q
1
— 13 —
V
GE
15
Vdc)
Q
2
— 14 —
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
L
E
— 13 —
nH
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
4–27
Motorola TMOS Power MOSFET Transistor Device Data
V
CE
= 10 V
250 µs PULSE WIDTH
V
GE
= 20 V
T
J
= 25°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, T
J
= 25°C Figure 2. Output Characteristics, T
J
= 125°C
Figure 3. Transfer Characteristics
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
7.5 V
30
20
0
840
T
J
= 125°C
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
24
8
4
0
1597511
25°C
V
GE
= 15 V
250 µs PULSE WIDTH
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
T
J
, JUNCTION TEMPERATURE (°C)
3.8
3.2
2
150500–50
2.6
100
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
26
I
C
= 10 A
40
16
7.5 A
TYPICAL ELECTRICAL CHARACTERISTICS
13
5 A
10
7315
V
GE
= 20 V
T
J
= 125°C
V
CE
, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (AMPS)
12.5 V
17.5 V
15 V
10 V
30
20
0
8402 6
40
10
7315
12
20
2.2
2.4
2.8
3.0
3.4
3.6
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation Figure 6. Gate–to–Emitter Voltage versus
Total Charge
C
oes
400
0
25201550
Q
g
, TOTAL GATE CHARGE (nC)
16
8
0
3550
C, CAPACITANCE (pF)
1200
10
C
res
C
ies
V
GE
, GATE–TO–EMITTER VOLTAGE (VOLTS)
4
Q
T
T
J
= 25°C
I
C
= 10 A
V
GE
= 15 V
1600
3010
V
CE
= 0 V
12
800
252015
Q
2
Q
1