1 Diffusion: Introduction and Case Studies in Metals and Binary Alloys 57
it is faster and the range of diffusivities is much wider than for close-packed
metals.
Diffusion of small foreign atoms proceeds much faster than self-diffusion
of the host metal. Small foreign atoms such as H, C, N, and O are usually
incorporated in octahedral or tetrahedral interstitial sites of the host lattice
and diffuse via a direct interstitial mechanism. Diffusion of hydrogen is a
particularly interesting case for scientific and application-oriented reasons. Its
diffusion is extremely rapid, non-classical isotope effects occur, and quantum
effects may cause strong deviations from a linear Arrhenius-like temperature
dependence of H diffusion.
Diffusion of solutes in substitutional alloys is vacancy-mediated. Solute
diffusion in very dilute alloys (impurity diffusion) is normally described by
diffusion coefficients which lie in a relatively narrow band around those of
self-diffusion of the host (solvent). This rather small diffusivity dispersion
is understandable since solute and solvent atoms are located on sites of the
same lattice and both use vacancies as diffusion vehicles. It reflects the high
efficiency for screening of electrical point charges of some metallic hosts such
as the noble metals and zinc. This efficient screening limits the solute-vacancy
interaction to relatively small values.
Remarkable exceptions from ‘normal’ behaviour of solute diffusion are
observed for polyvalent metals: Transition-metal solutes in aluminium are
extremely slow diffusers with high activation energies, high pre-exponential
factors and high activation volumes. Very likely this indicates a strong repul-
sion between vacancy and solute somewhere on the vacancy-solute exchange
path. Fast solute diffusion is observed, e.g., for noble metal solutes in lead
and tin and for late-transition-element solutes in group IVA solvents (zirco-
nium, titanium and hafnium). The fast diffusion has been attributed to the
dissociative mechanism. The latter operates for solutes which are dissolved
on substitutional and interstitial sites. Even when its interstitial fraction is
very small it can be responsible for the rapid diffusion. Fast solute diffusion
is also observed in the semiconductors silicon and germanium (see Chap. 4).
Systematic studies of diffusion in intermetallics (intermetallic compounds
and ordered alloys) have become available only recently. An understanding
of diffusion in terms of atomic mechanisms is more complex than for metal-
lic elements. The current knowledge about self-diffusion has been illustrated
for binary intermetallics with B2-, L1
2
-, and D0
3
-structures. Important fac-
tors which influence diffusion such as the crystal structure, the state of order
and disorder, the temperature and the composition have been illustrated. In
a broad sense diffusion is mediated by vacancy-type defects, which include
triple-defects and antistructure-bridge mechanisms. Relevant atomic mech-
anism must take into account that the degree of order in the material is
maintained during diffusion. Despite of the progress made in recent years,
diffusion in intermetallics is a field that deserves further attention.