274 Electron diffraction and its applications
diffraction, no simple analogy to the structure factor equation for X-ray diffraction. (i.e.
no simple way of relating atomic positions to diffracted beam intensities.)
The scattering described above is the dominant scattering process in the ‘thin foil’
(∼ 1 nm–100 nm) crystalline specimens used in transmission electron microscopy
(TEM). It is described as an elastic scattering process because the scattered electrons
lose no energy and therefore suffer no change in wavelength. It is the physical basis of
the ‘spot’ electron diffraction patterns described in Sections 11.2 and 11.3.
There are in addition a number of inelastic scattering processes in which the incident
electrons lose energy and therefore suffer a change in wavelength. They are of increasing
importance in ‘thicker thin-foil’ specimens in TEM and the ‘bulk’ specimens used in
scanning electron microscopy (SEM). We have already described some such inelastic
scattering processes in Section 9.8; the large energy losses suffered by electrons as they
enter the anode of an X-ray tube give rise to the continuous and characteristic X-radiation
(Fig. 9.24). There are in addition several inelastic scattering processes which involve
much smaller energy losses—thermal diffuse or phonon scattering, plasmon scattering,
single valence electron scattering—the physics of which are described in the books on
electron microscopy listed in Further Reading. The important point for us is that, since
the energy losses are small, the wavelength changes are also small and such inelastically
scattered electrons can then be elastically scattered, giving rise to Kikuchi patterns in the
TEM and electron backscattered diffraction (EBSD) patterns in the SEM. The geometry
of these diffraction patterns and their importance in the precise determination of crystal
orientation are described in Section 11.5.
Finally, we should note, as with light microscopy, the importance of diffraction in
relation to image formation and resolution. This is a very large topic which is introduced
very briefly in Section 11.6.
11.2 The Ewald reflecting sphere construction for
electron diffraction
Since electron wavelengths are very much smaller than the lattice parameters of crystals,
which are normally in the region of 0.3 nm upwards, the diameter of the reflecting sphere
is very large in comparison with the size of the unit cell of the reciprocal lattice. Referring
to the reciprocal lattice sections in Figs 8.6 and 9.l4(a) and (b) for example, for the case
of electron diffraction, the centre of the reflecting sphere would be situated along the
direction of the incident beam at a point far to the left of the origin of the reciprocal
lattice, well beyond the left-hand edge of the paper.
The situation for a simple cubic crystal (as for Fig. 9.l4(a)) is illustrated in Fig. 11.1,
which shows again that part of the reciprocal lattice section perpendicular to the b
∗
reciprocal lattice vector or y -axis (out of the plane of the paper) which lies close to the
surface of the reflecting sphere, only part of which near the origin can be shown since its
radius is so large. The incident electron beam is directed along the a
∗
reciprocal lattice
vector or x-axis and the centre of the reflecting sphere is far to the left of the diagram.
Close to the origin, 000, the curvature of the sphere is so small that it approximates
to a plane perpendicular to the direction of the electron beam and hence passes (in this
section) very close to the 001, 002, 003 and 00
¯
1, 00
¯
2, 00
¯
3, reciprocal lattice points.