4 Additive Processes for Polymeric Materials 225
for implantable neural wire probes [351–354], an interlayer dielectric [355], and
was later introduced to the MEMS community in 1997 as a coating material for
fluidic interconnects [356]. Parylene has gained popularity as a standard MEMS
material for its deposition method (vacuum-based), pinhole-free deposition, low
process temperature, transparency, and compatibility with microfabrication pro-
cesses [342]. Since its introduction to MEMS, Parylene was explored as a structural
material [357] in a wide variety of MEMS applications [123, 204, 205, 329,
358–370]. Parylene in carbonized/pyrolyzed [371–373] and ion-implanted [374]
forms have also found applications in MEMS as a sacrificial and sensing mate-
rial. Further modification of Parylene surfaces has been demonstrated, especially
for biological/biomedical applications [375–377].
4.5.2 Processing Techniques
Parylene is resistant to removal by solvents below its melting temperature. Only
chloronaphthalene or benzoyl benzoate above 150
◦
C are effective [378]. Liftoff
is not possible due to the conformal structure obtained during the deposition
process.
Physical processes are best for removing Parylene. Plasma processes effectively
remove both Parylene N and C; the removal mechanism is discussed in [379, 380].
Plasma etching [335, 346, 358, 377], reactive ion etching [346, 355, 381], reac-
tive ion beam etching [382], high-density plasma etching [383], and Bosch-like
switched chemistry etching [346, 384, 385] have all been demonstrated. Oxide and
metal masks may redeposit during the etch process and result in rough surfaces or
the formation of micrograss [346, 355, 381]. Spin-on glass, nitride, and sputtered
a-Si are also mediocre masking materials [346, 383]. Photoresist masks are pre-
ferred, however, the etch rate is comparable to that of Parylene and thus exhibits
low selectivity [346]. SU-8 masks exhibit higher selectivity although its removal
after etching was not required in the single study to date [386]. Anisotropic sidewall
profiles are possible by using high-density plasma and switched chemistry etching
[346, 383–385].
Other methods to remove Parylene include ultraviolet laser ablation [353, 354]
and manual removal [352]. Release agents (such as 2% Micro
R
lab cleaning solu-
tion, International Product Corp.) applied to surfaces allows Parylene to be peeled
away after deposition. Peeling of Parylene without damage to the film was also
demonstrated on Si surfaces having a native oxide layer; immersion in water can
facilitate the release [204]. Photoresist sacrificial layers are practical for the release
of smaller Parylene structures [361]. As removal can pose fabrication challenges
in some applications, alternative patterning methods were investigated. Selective
deposition of Parylene is achieved by controlling substrate temperature [387].
This technique exploits the phenomenon that deposition thickness is a function
of substrate temperature; heating the substrate (70
◦
C) selectively limits Parylene
deposition to cooler regions [388, 389].