4 Additive Processes for Polymeric Materials 213
Other notable features of polyimides include high glass transition tempera-
ture, high thermal and chemical stability, low dielectric constant, high mechanical
strength, low moisture absorption, and high solvent resistance [194, 199, 206].
This combination of features has led to the use of polyimides as replacements for
ceramics [194 ], as chemically resistant electroplating masks [207], and as sacri-
ficial layers [208]. Further review of the electrical and mechanical properties are
available in [200, 209] and modification of electrical properties through the addi-
tion of graphite particles is described in [210]. Chemical modification of polyimide
chemistry yields photosensitive versions having negative properties [207], however,
these suffer from significant shrinkage during the imidization process. Thus, etching
of standard nonphotodefinable polyimides yields higher resolutions [200, 207].
4.3.2 Processing Variations
4.3.2.1 Removal of Polyimide
Chemical removal of both cured and uncured polyimides is possible although wet
removal of cured polyimides is difficult.
• Cured polyimides: hot bases and strong acids [200], H
2
SO
4
/H
2
O
2
(selective over
silicon nitride and oxide) [211].
• Uncured polyimides: bulk removal potassium hydroxide (KOH) (5–30%) [199,
207, 212, 213] and selective removal in KOH with photoresist mask [200].
• Dry etching is more effective for removing polyimide, including when used as a
sacrificial layer [208, 214].
• Chemistries: O
2
plasma [215]or O
2
+ CF
4
,CHF
3
,orSF
6
plasmas [199, 216–
221].
• Etch masks: Al [199, 201, 208, 217, 219, 221–223], Cr/Au [218], PECVD silicon
nitride [224], oxide [208], SiC [208].
Process optimization (gas concentration, plasma power, and ambient pressure)
enables control of etched sidewall angles [220, 225–227] and high aspect ratios are
possible with an electron–cyclotron resonance source [228]. Uncured polyimides
may also be removed by dry etching [199].
Alternative dry removal processes include focused ion beam (FIB) [217] and
excimer laser machining [213, 229–232].
4.3.2.2 Release of Polyimide
The simplest release technique is to peel polyimide away from Si wafers [201, 223,
233, 234]. Flexible electrode arrays are released from substrate carriers in this man-
ner (Fig. 4.17). A number of sacrificial materials have also been used to promote
release: