Wiley, 2003, 666 pages
More than 1,100 TEM images illustrate the science of ULSI
The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems.
Characterization and analysis of contemporary microelectronics devices, processes, and materials using transmission electron microscopy (TEM) are the focus of this book. The book is written for engineers and for graduate and postgraduate students who wish to know more about ULSI (ultra large scale integration circuits) process problems and the handling and solution of real process issues. Prior knowledge of ULSI process and semiconductor devices is not essential.
The book is divided into four parts: Part I covers the fundamentals. It begins with an introduction to the various microscopes and analytical tools usually found in semiconductor laboratories (Chapter 1). ULSI process fundamentals (Chapter 2) and device construction analysis (Chapter 3) are discussed next, followed by a detailed presentation of the most important step in TEM analysis: sample preparation (Chapter 4). Part II focuses on a few important device structures in the current ultra (or very) large scale integration (ULSI/VLSI) processes. Included in the discussion are ion implantation and substrate defects (Chapter 5), dielectrics and isolation (Chapter 6), silicides (Chapter 7), and interconnects (Chapter 8). Part III then proceeds to some of the most challenging topics in the contemporary process technologies: DRAM and SRAM (Chapters 9–12). Part IV provides a window on developments in device failure analysis (Chapter 13), advanced packaging and under bump metallization (UBM) technologies (Chapter 15), and nonconventional devices and materials, among these MEMS, SOI, SiGe, and III–V compound semiconductors (Chapters 14 and 16).
More than 1,100 TEM images illustrate the science of ULSI
The natural outgrowth of VLSI (Very Large Scale Integration), Ultra Large Scale Integration (ULSI) refers to semiconductor chips with more than 10 million devices per chip. Written by three renowned pioneers in their field, ULSI Semiconductor Technology Atlas uses examples and TEM (Transmission Electron Microscopy) micrographs to explain and illustrate ULSI process technologies and their associated problems.
Characterization and analysis of contemporary microelectronics devices, processes, and materials using transmission electron microscopy (TEM) are the focus of this book. The book is written for engineers and for graduate and postgraduate students who wish to know more about ULSI (ultra large scale integration circuits) process problems and the handling and solution of real process issues. Prior knowledge of ULSI process and semiconductor devices is not essential.
The book is divided into four parts: Part I covers the fundamentals. It begins with an introduction to the various microscopes and analytical tools usually found in semiconductor laboratories (Chapter 1). ULSI process fundamentals (Chapter 2) and device construction analysis (Chapter 3) are discussed next, followed by a detailed presentation of the most important step in TEM analysis: sample preparation (Chapter 4). Part II focuses on a few important device structures in the current ultra (or very) large scale integration (ULSI/VLSI) processes. Included in the discussion are ion implantation and substrate defects (Chapter 5), dielectrics and isolation (Chapter 6), silicides (Chapter 7), and interconnects (Chapter 8). Part III then proceeds to some of the most challenging topics in the contemporary process technologies: DRAM and SRAM (Chapters 9–12). Part IV provides a window on developments in device failure analysis (Chapter 13), advanced packaging and under bump metallization (UBM) technologies (Chapter 15), and nonconventional devices and materials, among these MEMS, SOI, SiGe, and III–V compound semiconductors (Chapters 14 and 16).