Wong H.-S.P., Akinwande D. Carbon Nanotube and Graphene Device Physics
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Index
aligned nanotubes, 15
allotropes, 47, 48
amorphous carbon, 6
arc-discharge synthesis, 15
atomic force microscopy, 16, 236
Bacon, Roger, 7, 244
ballistic
ballistic channel, 131
ballistic condition, 132
ballistic conductor, 128
ballistic current, 131, 135
ballistic regime, 158
ballistic resistance, 174
ballistic transport, 128, 169
band degeneracy, 88
band structure, 20, 32, 52, 63
bandgap, 32, 69, 94
bandgap-diameter relation, 94
biocompatibility, 235
biosensors, 234, 235
blast-furnaces, 6
Bloch’s theorem, 26, 52, 55, 56
Bloch, Felix, 47
boron nitride nanotubes, 18
Bose–Einstein distribution, 159, 165
Bragg reflections, 32
Bravais lattice, 33, 38, 50
Brillouin zone, 29, 41, 51, 62
buckminsterfullerene, 10
buckyballs, 1, 10, 15, 49
carbon filaments, 4, 6, 7, 244
carrier density, 65, 66
catalytic growth, 13
characteristic impedance, 180
chemical vapor deposition, 4, 13, 14, 239
chiral angle, 78
chiral vector, 77
chirality
achiral object, 76
armchair CNTs, 76
chiral CNTs, 76
chiral object, 75
chirality concept, 74
zigzag CNTs, 76
CNT Brillouin zone, 81, 86
CNT high symmetry points, 89
CNT surface area, 80
cold cathodes, 238
composite materials, 244
crystal lattice, 26
crystal structure, 32
crystalline quartz, 97
curvature effects, 96
de Broglie, 22, 128
degeneracy, energy, 25
density of states, 64, 102–104, 109, 111, 113
density of states, effective, 198
diffusive transport, 158, 169
Dirac cone, 64, 113
dispersion, 20, 52
dispersion quantization, 24
Edison, Thomas, 4
effective mass, 31, 117, 221
electromigration phenomena, 184
electron-hole symmetry, 59, 66, 96, 147
electronic nose, 235
electronic textiles, 244
electrons
electron in a box, 25
electron in a periodic potential, 28
free electron model, 53
free electrons, 23
nearly-free electron, 30
tight-binding model, 54
tightly bound electron, 31
Endo, Morinobu, 8
Fermi energy, 30, 58, 62, 90, 114, 130, 195
Fermi velocity, 64, 91, 116, 176
Fermi–Dirac distribution, 65, 119, 130, 202
250 Index
field emission, 238
filament, 244
flatband voltage, 204, 214
flexible substrates, 240
Fowler-Nordheim tunneling, 239
Geim, Andre, 12
graphene nanoribbons, 67
graphene symmetry points, 89
greatest common divisor, 80
group velocity, 182
Hamiltonian, 22, 52, 57
hybridization, 48, 97
hydrogen storage, 242
Iijima, Sumio, 10, 11, 73
independent electron approximation,
20, 158
iron carbide, 6
kajal, 3
kinetic inductance, 128, 149, 178
Kronig–Penney model, 26, 32
Landauer’s formula, 132
Landauer-Büttiker formalism, 217
laser ablation synthesis, 16
lattice basis, 33, 34, 38
lattice constant, 36
linear combination of atomic orbitals, 54
Luttinger liquid, 179
massless particles, 63
Matthiessen’s rule, 164
mean free path, 132, 133, 163, 194
nano-electromechanical systems, 237
nanoelectronics, 19
nanofibers, 4
nanotechnology, 19
nanotube radio, 238
nanotweezers, 238
nearest neighbor tight-binding model,
58, 88
nearest neighbors, 35, 50, 58, 60
non-equilibrium Green’s function, 228
orbitals, 47
organic chemistry, 234
organic semiconductor, 240
overlap energy, 60
overlap integral, 62
periodic boundary conditions, 27, 45, 53,
56, 83
phonon
acoustic phonon scattering, 170
acoustic phonons, 160, 162, 165, 201
critical optical phonon energy, 166, 223
density of states, 159
drain optical phonon scattering, 207
electron–phonon scattering, 161
optical phonon absorption, 162, 166
optical phonon emission, 162, 166
optical phonons, 161
phonon definition, 158, 159
zone-boundary phonons, 161
zone-center phonons, 161
Planck, Max, 151
primitive unit cell, 37, 38
primitive vectors, 36, 38, 76
printing techniques, flexible electronics,
241
propagation constant, 180
quantum capacitance, 128, 139, 147, 152, 179
quantum capacitance limit, 197
quantum conductance, 128, 152
quantum confinement, 68, 70
quantum mechanics, 19
quantum point contact, 132
quantum resistance, 169
quasi-metallic nanotubes, 96
Raman spectroscopy, 16
random distribution of CNTs, 88
reciprocal lattice, 38, 51
reciprocal space, 32
saturation current, metallic CNT, 172, 173
scanning electron microscope, 16
scanning tunneling microscope, 17, 236
Schottky barrier, 194,214
Schottky barrier,
Schrödinger equation, 20, 21, 27, 31, 52, 54, 55
sigma electrons, 96
solid state physics, 19
space elevator, 244
special relativity, 63
supercapacitors, 244
surface potential, 140, 195
surface to volume ratio, 233
thermal broadening function, 140
tight-binding model, 20, 31, 54, 55
Index 251
transistor
1D FET, 225
ambipolar, 194, 215
back-gate FET, 193
ballistic CNFET, 194, 200
diffusive CNFET, 194
MOSFET, 225
performance parameters, 210
quantum field-effect transistor, 212
scaling, 191
Schottky-barrier CNFET, 214
self-aligned top-gated CNFET, 194
short-channel effects, 192, 227
top-gate FET, 193
tunnel CNFET, 228
unipolar CNFETs, 224
translation vector, 79
transmission electron microscope, 16, 33
transmission line, 180, 182, 183
transmission line model, 177
transparent electrical contact, 129
uncertainty relation, 24
vacuum electronics, 238
Wigner–Seitz cell, 37, 38
X-ray photoelectron spectroscopy, 17
zero-point energy, 24
zone-folding, 88