Wang Zh.M. One-Dimensional Nanostructures
Подождите немного. Документ загружается.
One-Dimensional Nanostructures
LECTURE NOTES IN NANOSCALE SCIENCE AND TECHNOLOGY
Series Editors:
Zhiming M. Wang, Department of Physics, University of Arkansas, Fayetteville, AR, USA
Andreas Waag, Institut für Halbleitertechnik, TU Braunschweig, Braunschweig, Germany
Gregory Salamo, Department of Physics, University of Arkansas, Fayetteville, AR, USA
Naoki Kishimoto, Quantum Beam Center, National Institute for Materials Science, Tsukuba, Ibaraki,
Japan
Volumes Published in this Series:
Volume 1: Self-Assembled Quantum Dots, Wang, Z.M., 2008
Volume 2: Nanoscale Phenomena: Basic Science to Device Applications, Tang, Z., and Sheng, P., 2008
Volume 3: One-Dimensional Nanostructures, Wang, Z.M., 2008
Forthcoming Titles:
B-C-N Nanotubes and Related Nanostructures, Yap, Y.K., 2008
Towards Functional Nanomaterials, Wang, Z.M., 2008
Epitaxial Semiconductor Nanostructures, Wang, Z.M., and Salamo, G., 2008
One-Dimensional
Nanostructures
Zhiming M. Wang
Editor
University of Arkansas
Fayetteville, AR, USA
123
Series Editors:
Zhiming M. Wang
Institute of Nanoscale Science
and Engineering
University of Arkansas
Fayetteville, AR
USA
Gregory Salamo
Department of Physics
University of Arkansas
Fayetteville, AR
USA
Andreas Waag
Institut f
¨
ur Halbleitertechnik
TU Braunsweig
Braunschweig
Germany
Naoki Kishimoto
Quantum Beam Center
National Institute for Materials Science
Tsukuba, Ibaraki
Japan
ISBN 978-0-387-74131-4 e-ISBN 978-0-387-74132-1
Library of Congress Control Number: 2008927188
c
° 2008 Springer Science+Business Media, LLC
All rights reserved. This work may not be translated or copied in whole or in part without the written
permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York,
NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in
connection with any form of information storage and retrieval, electronic adaptation, computer software,
or by similar or dissimilar methodology now known or hereafter developed is forbidden.
The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are
not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject
to proprietary rights.
Printed on acid-free paper
9 8 7 6 5 4 3 2 1
springer.com
Preface
One-dimensional (1D) nanostructures represent a group of nanomaterials with
highly anisotropic morphologies, the smallest dimension falling in the range of
1–100 nm. Typical examples of 1D nanostructures include nanowires and nan-
otubes. Semiconductor nanowires are characterized by the efficient transport of elec-
trons and excitons, and have been regarded as the most promising building block
for nanoscale electronic and optoelectronic devices. Nanosystems can be built from
these elements using metallic nanowires as interconnects. Carbon nanotubes, either
semiconducting or metallic, are mechanically robust and chemically stable, sug-
gesting numerous potential applications in nanoelectronics. The growth, character-
ization, and applications of 1D nanostructures invoke all disciplines of science and
engineering. As a result, scientists working in one area need to go beyond their own
expertise to obtain a broad view of the whole field. The objective of this book is
to elucidate the fundamental, underlying science common to 1D nanostructures and
their applications. The result is a representative snapshot of the latest developments
from diverse perspectives in a series of chapters from highly engaged scientists.
In Chaps. 1–4, particular emphasis is placed on synthesis of nanowires. Chap. 1
summarizes the controversy regarding nanowire growth mechanisms and proposes
a Si-assisted growth model. Chap. 2 reviews the synthesis and properties of SiC
1D nanostructures, in both experiments and theories. Chap. 3 deals with self-
organization of Si-based nanowires. Chap. 4 demonstrates the formation of large-
scale arrays of addressable Si nanowires, with controllable dimension, placement,
and orientation, showing the promise for integration of nanowires into device
architectures.
Chaps. 5–7 focus on the property characterization of nanowires. Chap. 5 reveals
the extreme optical anisotropy of individual nanowires and of nanowire ensembles.
Chap. 6 offers a numerical method for a better description of the plasmonic proper-
ties of silver nanowires. Chap. 7 investigates electromagnetic nanowire resonances
for field-enhanced spectroscopy.
The progress made toward applications is discussed in Chaps. 8–10. Chap. 8 is
devoted to detailed analysis of engineering contact barriers and their impact on the
electrical transport properties of carbon nanotube field-effect transistors. Chap. 9
v
vi Preface
presents a comprehensive overview on the current status of low dimensional nano-
materials for spintronics. Chap. 10 reports on 1D phase-change nanomaterials for
information storage applications.
Chap. 11 is a theoretical contribution in nature and studies the melting behav-
ior, thermal conductivity, and mechanical properties of crystalline GaN nanotubes
through molecular dynamics methods.
While the above chapters deal with freestanding properties of 1D nanostructures,
buried semiconductor nanowires – commonly referred to as quantum wires – are the
subjects of the last chapter. Chap. 12 reviews the self-assembly of InAs/InAl(Ga)As
quantum wires on InP substrates and demonstrates how the lateral composition mod-
ulation in InAlAs buffer layers plays an important role in determining their structural
and optical properties.
Finally, the editor wishes to thank his wife, Yanze Xie, for her support and un-
derstanding. The editor himself is highly involved in many research projects, and
therefore, is forced to perform nearly all editorial work at home, often at night and
on weekends. This means many sacrifices for Yanze as a mother of two young kids.
The editor is honored that she has accompanied him in the past from China to Ger-
many to the United States, and looks forward to spending the rest of his life with her.
Fayetteville Zhiming M. Wang
February 2008
Contents
1 Study of Nanowire Growth Mechanisms: VLS and Si Assisted ...... 1
Hyun D. Park and S.M. Prokes
2 One-Dimensional SiC Nanostructures: Synthesis and Properties .... 17
Weimin Zhou, Yafei Zhang, Xiaoming Niu, and Guoquan Min
3 Self-Organized Nanowire Formation of Si-Based Materials ........ 61
Hideo Kohno
4 Controlled Formation of Individually Addressable Si Nanowire
Arrays for Device Integration ................................. 79
Ying-Lan Chang and Sung Soo Yi
5 Physical Properties of GaN Nanotubes as Revealed
by Computer Simulation ..................................... 97
Zhiguo Wang, Fei Gao, Xiaotao Zu, and William J. Weber
6 Optical Anisotropy of Semiconductor Nanowires ................. 127
Jaime G
´
omez Rivas, Otto L. Muskens, Magnus T. Borgstr
¨
om,
Silke L. Diedenhofen, and Erik P.A.M. Bakkers
7 FDTD Spectroscopic Study of Metallic Nanostructures:
On the Pertinent Employment of Tabulated Permittivities ......... 147
Thierry Laroche and Alexandre Vial
8 Electromagnetic Nanowire Resonances for Field-Enhanced
Spectroscopy ............................................... 175
Annemarie Pucci, Frank Neubrech, Javier Aizpurua, Thomas Cornelius,
and Marc Lamy de la Chapelle
9 Designing the Carbon Nanotube Field Effect Transistor
Through Contact Barrier Engineering .......................... 217
Byoung-Kye Kim, Hyo-Suk Kim, Hye-Mi So, Noejung Park, Suklyun
Hong, Ju-Jin Kim, and Jeong-O Lee
vii
viii Contents
10 Low Dimensional Nanomaterials for Spintronics ................. 247
Jinlong Yang and Hongjun Xiang
11 One-Dimensional Phase-Change Nanomaterials for Information
Storage Applications ......................................... 273
Xuhui Sun, Bin Yu, Garrick Ng, and M. Meyyappan
12 Ordering of Self-Assembled Quantum Wires on InP(001) Surfaces .. 291
W. Lei, Y. H. Chen, and Z. G. Wang
Index .............................................................323
Contributors
Javier Aizpurua
Donostia International Physics Center
and Joint Center of Materials Physics
CSICUPV/EHU,
Paseo Manuel de Lardizabal 4,
Donostia-San Sebastian 20018
Spain
Erik P.A.M. Bakkers
Philips Research Laboratories,
High-Tech Campus 4,
5656 AE Eindhoven,
The Netherlands
Magnus T. Borgstr
¨
om
Philips Research Laboratories,
High-Tech Campus 4,
5656 AE Eindhoven,
The Netherlands
Ying-Lan Chang
Agilent Laboratories, Agilent
Technologies, 5301 Stevens Creek
Blvd, Santa Clara, CA 95051, USA
and
Nanomix, Inc., 5980 Horton Street,
Suite 600, Emeryville, CA 94608, USA
Marc Lamy de la Chapelle
Laboratoire de Nanotechnologie et
Instrumentation Optique,
Institut Charles Delaunay,
CNRS FRE 2848, P
ˆ
ole Physique,
Mat
´
eriaux et Nanotechnologie,
Universit
´
e de Technologie de Troyes,
12 rue Marie Curie, BP-2060,
10010 Troyes Cedex, France
Y. H. Chen
Key Laboratory of Semiconductor
Materials Science, Institute of
Semiconductors, Chinese Academy of
Sciences, PO Box 912, Beijing 100083,
P.R. China
Thomas Cornelius
Department of Materials Research,
Gesellschaft f
¨
ur Schwerionenforschung
(GSI), Planckstr. 1, 64291 Darmstadt,
Germany
Silke L. Diedenhofen
FOM Institute for Atomic and
Molecular Physics, AMOLF,
c/o Philips Research Laboratories,
High-Tech Campus 4, 5656 AE
Eindhoven, The Netherlands
Fei Gao
Pacific Northwest National Laboratory,
PO Box 999, Richland, WA 99352,
USA
ix