Wang Zh.M. One-Dimensional Nanostructures

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Index 325

refractive indexes of ensembles of

epitaxially grown, 141

transmission and reﬂection measurements,

138, 140

Ge nanowires, melting point reduction in, 9

GeTe nanowires, 278

EDS spectrum of, 280

evaporation rate, 288

high-resolution TEM images of crystal

structure of, 281

melting point, measurement of, 288

SEM image of, 279

Giant birefringence, 141–143

Giant magnetoresistance (GMR), 247

Gibbs–Thomson effect, 7–9

Gold, thin ﬁlms of, 129

Half-metallic (HM) ferromagnet, 260

Hard disk drive (HDD), 247

Heisenberg Hamiltonian, 265

High-density magnetic storage devices, 250

High-frequency induction heating furnace,

components of, 30

Hybrid nanostructure, 250

InAs/InAl(Ga)As QWR superlattices, 292

InAs nanostructures, nucleation sites for, 299

InAs nanowires

growth of, 2

effect of oxygen on, 4–5

effect of SiO

on, 10–13

melting point depression, Au–In tip, 7–8

InAs quantum wires

formation on InAlAs/InP(001), 292

superlattices

spatial correlation of, 301

vertical anticorrelation of, 302

Indium phosphide nanowire, 128

Indium titanium oxide (ITO), 195

Infrared reﬂection-absorption spectroscopy

(IRRAS), 210

InP nanowires, 129

photoluminescence spectra of, 132, 133

nanowires

SEM image of, 284

on SiO

substrate, 286

β-In

nanowires, high-resolution TEM

images of, 285

Interband transition, anomalous temperature

dependence of, 314

Intraband photocurrent, 317

Ion beam alignment, 84, 91

Isopropanol (IPA), 195

Kohn–Sham single-electron equations, 219

Laser-ablation technique, 23–24

Laser beam depolarization, 204

Lateral composition modulation (LCM), 294

Liquid metal alloy droplet, 3

Liquidus depression, 9–10

Local density approximation (LDA), 267

Local spin density approximation (LSDA), 267

Lorentz Model, 155

combination with Drude model, 156–157

Lorentz oscillator, 161

LSP resonance, 178, 200, 205

Luebbers coefﬁcients, 156

Magnetic anisotropy, 249, 264

Magnetoresistance (MR) ratio, 260

Magnetoresistive random access memory

(MRAM), 247

Maxwell–Garnett effective medium

approximation, 136

Maxwell’s equations, 148, 178

for metallic nanorods, 180

techniques to solve, 183

MD simulations, GaN nanotubes

compressive behavior of, 121–122

melting processes of, 102–103

thermal conductivity, 107–110

Melting point depression, Gibbs–Thompson

effect, 7–9

Melting temperature

bulk GaN, 102–103

GaN nanotubes, 105–106

GaN slabs, 103–104

metal cluster, 101

Mercury-cadmium telluride (MCT) detector,

196

Metal alloy tip

liquid state of, 1

solid state of, 2, 6, 10

Metal-carbon nanotube, 219

Metal cluster decoration, for sensing

characteristics of SWNT-FETs, 234

Metal-CNT interfaces, 227

Metal-ﬁlm morphology, 207

Metal-induced gap state (MIGS), 223

Metallic nanoparticles

study of, 162

surface plasmon resonances of, 176, 200

Metallic nanorods, Maxwell’s equations for,

180

326 Index

Metallic nanostructures, 167

Metallic nanowires, 160, 166

factors governing optical response of, 178

prepared by growth in ion tracks, 196

Metal-nanoparticle ﬁlms, 208

Metal-nanotube tunneling barrier, 243

Metal NWs, fabrication of, 81

Metal-organic vapor-phase epitaxy (MOVPE)

system, 129

Methylisobutylketon (MIBK), 194

Microsampling, of SiGe needle, 68, 70

Mie resonances, 176, 178

Migration enhanced epitaxy (MEE) growth

modes, 304

Mn-Mn coupling, 251

Molecular dynamics simulations, GaN

nanotubes. See MD simulations, GaN

nanotubes

Mono-afﬁne and multi-afﬁne nanowires. See

Diameter ﬂuctuations, SiC nanowires

Mono-afﬁnity, 74

Monocrystalline nanostructure, 167

Monocrystalline silver nanowire. See Silver

nanowire

Multiple multipole expansion (MMP)

techniques, 183

Multi-walled nanotubes (MWNTs), 217

Nanoantennas, 176, 181

Nanocables

β-SiC-SiO

-BN/C, structure of, 37

coaxial, 38

PL spectra of SiC, 44, 45

SiC/SiO

,32

ZnS/SiC, 39

Nanofabrication, top-down vs. bottom-up, 275

Nanometer Pattern Generation System

(NPGS), 195

Nano-optic simulation, fabrication process in,

167

Nano-piezomagnet, 259

Nanoribbons, SiC-shelled ZnS, 39

Nanoscale structures, fabrication process of,

167

Nanosphere lithography, 203

Nano-spintronics, 248–249. See also

Spintronics

Nanosprings, SiC/SiO

applications, 32–33

TEM images of, 33

Nanotubes

TM doped BN, 252–258

TM doped C, 251–252

Nanowhiskers

3C-SiC, 26

high-resolution TEM image of, 26

photoluminescence spectra, 28

Nanowire. See also Speciﬁc nanowires

crystallinity and crystallographic

orientation, study of, 191

electronic properties, factors affecting, 81

fabrication methods

electron-beam lithography, 194–196

wire growth in ion tracks of membranes,

187–194

ﬂowers

components of, 28–29

growth, Si substrate, 29–30

growth mechanisms

oxide assisted (OA), 1

oxygen, inhibiting effect, 4

using metal catalysts, capabilities, 6

vapor-liquid-solid (VLS), 1–2

layer, thickness of, 138

magnetic alignment of, 82

plasmon modes, factors governing, 180

resonances

basics of, 178–180

spectroscopy of, 196

Near-ﬁeld optical transmittance, 161

Nondispersive media, 156

One-dimensional semiconductor

nanostructures, 17, 83

One-dimensional SiC nanostructures, 20–21

Optical anisotropy, 313

Optical phonons, 218

Orient SiC nanowire arrays, 34–35

Oxidation and nanowire growth, 4–5

Particle excitations, 176

PCNWs. See Phase-change nanowires

Periodic diameter modulation, 64–65

Permeability, 134

Permittivity tensor, 134–135

Phase-change materials (PCMs), 274

Phase-change nanowires

melting point measurement, 287–288

synthesis and characterization of

III-VI compound (In

) nanowires,

283–287

IV-VI compound (GeTe) nanowires,

278–283

vapor-liquid-solid (VLS) growth mechanism

of, 276–27

Index 327

Phase-change random access memory, 274

Phosphate buffered saline (PBS), 238

Photocurrent (PC) spectroscopy, 317

Photolithographic tools, advancement of, 275

Photoluminescence, polarization anisotropy of,

129, 131

Photonic structures, 176

Plasmon hybridization, 186

Plasmonic Fabry–Perot cavity, 162

Polarization anisotropy, 132

absorption, 131–132

emission, 132–134

Polyethyleneimine (PEI)-starch

functionalization, 234

Polymer-matrix composites, tensile stress-

strain curves of, 50

Polymethyl methacrylate (PMMA), 194

Potential energy, variation

bulk GaN, 101–102

GaN nanotubes, 104–105

slabs, 103–104

PRAM. See Phase-change random access

memory

Projected density of states (PDOS), 224, 255

Projector augmented wave (PAW), 253

Protein nanoparticles, contact engineering

with, 238–242

Quantum computation, 248

Quantum dashes (QDash), 319

Quantum wire lasers, 319

Quantum wire superlattice, dislocations in,

310–313

Quartztube,4,30

Raman signal enhancement, 203

Rayleigh instability, 194

Recursive accumulator, 153

Recursive convolution method, for studying

dispersion models, 150, 152–153

Reﬂectance difference spectroscopy (RDS),

295

Reﬂection high energy electron diffraction

(RHEED), 295

Schottky barriers

to electron transport, 233

at metal-nanotube contact, 240

of SWNT-FETs, 227

Selected-area electron diffraction (SAED),

191, 285

Self-afﬁne patterns, 73

Self-assembled monolayers (SAM)

of molecules containing thiol group, 227

preparation of, 208

Self-assembled quantum wires

anomalous temperature dependence of

interband transition, 314

optical properties of, 313

Semiconductor materials, nanorods of, 185

Semiconductor nanowires, 131

coherent propagation of light, 134

growth of, 128–130

incident wave onto, 131

Maxwell–Garnett permittivity of, 136

photoluminescence, polarization anisotropy

of, 131

polarization anisotropy, 132

propagation of light, 129

Semiconductor NWs

alignment during growth, 82–83

fabrication of, 81

Shape memory synthesis, 21

Si-assisted growth mechanism

of InAs nanowires, 10

oxide layer effects on, 11–12

via In diffusion, 13

SiC

crystalline structure of, 18

nanostructures, 28–29

nanotubes

hydrogen storage in, 52–53

interlayer spacing, 36

synthesis apparatus, 35–36

photodegradation rates, 52

PL spectra of, 44

properties of, 19

SiC/BN nanowires, electrical transport of, 46

SiC-CNT junctions, 38–39

SiC nanorods

optical properties of, 44

strengths of, 48

synthesis of

arc-discharge process, 22–23

by ﬂoating catalyst methods, 30

by hot ﬁlament CVD, 26

sol-gel and carbothermal reduction, 24–25

with thermally annealing singlewalled

carbon nanotube sheets, 21, 22

two-step reaction process, 20

SiC nanowires

Al-doped, 27–28

alignment during growth, 82–83

arrays, oriented, 34–35

fabrication process, 84–87

zigzagging behavior, 87, 90

328 Index

BN-sheathed, synthesis of, 38–39

crystalline quality of, 87

postgrowth process effects, 93

diameter ﬂuctuations in

fractal, 73–75

random walk, 75–76

EDS analysis of, 28

electrical contacts, 91

electrical transport in, 46

fabrication process, 83

catalyst site, 86, 87

EBL and metal deposition processes, 86

Si wafer, 84

in vertical metal-organic chemical vapor

deposition reactor, 86

ﬁeld-effect transistor

carrier mobility, 48

drain current, 47–48

electronic measurement conﬁguration for,

46–47

–V

characteristic of, 47

ﬁeld-emission measurements

Fowler–Nordheim (FN) theory, 41–42

setup for, 40–41

single-crystal, 42–43

hydrogen storage properties, 52–53

ion-beam alignment, 90–91

I–V curves, 46

I–V measurement of, 93

kinking of, 87, 88

mechanical properties measurements

ﬂexural properties, 49–50

Young’s modulus, 48–49

photocatalytic activity of, 51, 52

postgrowth alignment, 83

postgrowth assembly process, 82

properties of, 17–18

Raman spectra of, 44

randomly oriented, on Au islands, 84

response to, DC electric ﬁeld set up, 82–83

synthesis methods

arc-discharge process, 21–22

bottom-up approach, 81

comparison of, 33–34

direct current magnetron sputtering

methods, 27

laser-ablation technique, 23–24

microwave plasma CVD, 25–26

top-down semiconductor processing,

80–81

zigzagging behavior, 87, 90

ZnO nanorod fabrication on, 39

β-SiC nanowires

IR spectrum of, 44, 45

synthesis by

high-frequency induction heating, 30–33

sol-gel and carbothermal reduction, 24

thermal evaporation, 33

SiCNTs. See SiC nanotubes

SiCNW composites, tensile stress-strain curves

of, 50

Si core-shell needles, sulfur-assisted growth

of, 68

SiC whiskers, 20

arc-discharge process, 21–23

SiC/ZnO shell–core nanostructures, 39–40

SiGe core-shell needles, sulfur-assisted growth

Ge/Si atomic ratio, 69–70

microsampling, 68

VLS growth, 69

Silicon carbide nanorods. See SiC nanorods

Silver nanowire, 162, 171

inﬂuence of mean free path on guiding

efﬁciency for, 168–170

Si nanochains

discovery of, 62

formation mechanism, 63

periodic diameter modulation, 64–65

surface oxidation, 65–66

TEM micrographs of, 63

as templates, Cu-silicide/Si/oxide nanochain

fabrication, 67

Si nanowires, 2

Ti-catalyzed, growth of, 6, 10

Single-crystalline wurtzite GaN nanotubes.

See GaN nanotubes

Single-crystal SiC nanowires, ﬁeld-emission

of, 42–43

Single plasmonic nanowires, near-ﬁeld optical

properties of, 160–161

Single silver nanowire. See Silver nanowire

Single-spin transistor, 248

Single-walled nanotubes (SWNTs), 217

fabrication of n-Type transistors with Al

decoration, 232–233

Sol-gel and carbothermal reduction processing,

24–25

Sol-gel template synthesis, 249

Spherical nanoparticles, resonances of, 176

Spin-based electronics. See Spintronics

Spin-dependent resonant tunneling devices,

252

Spin-injection devices, 249

Spin-magnetization, 268

Spin-polarized carriers, 248

Index 329

Spin-polarized conductors, 252

Spin polarized electrons, 248

Spintronics

application in quantum computation, 248

impact on HDD industry, 247

Stillinger-Weber potential, 100–101

Strain induced lateral-layer ordering (SILO)

process, 314

Surface charge density, 185

Surface enhanced infrared absorption

(SEIRA), 177, 181

application to, 207–210

Surface enhanced Raman scattering (SERS),

177, 181

application to, 202–207

Surface oxidation, 65–66

Surface plasmon

modes, role in single elongated

nanoparticles, 147

propagation, 162

resonators, 160, 185

Tensile behavior, GaN nanotubes

critical stress, 113–114

strain-stress simulations, 112–113

Thermal conductivity

bulk GaN, MD simulations, 108–111

estimation methods, 107

T-NFRC, ﬂexural properties of, 49

Transitional-metal free systems, 267–268

Transition-metal (TM) atoms, 249

benzene sandwich polymers, 260–267

doping

BN nanotubes, 252–258

C nanotubes, 251–252

nanowires, 250–251

Transversal polarizations, 181

Trimethylindium (TMI), 129

Turn-on ﬁeld

of carbon-coated SiC nanowires, 43

deﬁnition of, 41

of pure BN nanotubes, 42

Uniaxial birefringent material, 135

UNI-LAC linear accelerator, 188

Vacuum two-zone nanowire synthesis system,

277

Vapor-liquid-solid growth mechanism, 2

oxygen effects on, 4–5

schematics of, 129

SiGe core-shell needles, 69

of Si nanowires, 3

and VSS growth mechanism, 6–10

Vapor-solid growth, 61

of nanowire, 62

Vienna ab initio simulation package (VASP),

219, 253, 261

VLS growth mechanism. See Vapor-liquid-

solid growth mechanism

VLS nanowire growth, 276

VSS growth mechanism

metallic binary system, melting point

depression of, 7–8

Ti-catalyzed Si nanowire, 6

Whiskers, of single crystalline Si

growth mode of, 61

periodic instability in, 64

Wire growth, in ion tracks of membranes,

187–194

Wrapping method, 98

Young’s modulus

for core–shell SiC/SiO2 nanowire, 48

GaN nanotube, 121

SiC–SiO

nanowires, 49

ZnO nanorods, 39

Z-transform method, for modeling of gold

ﬁlms properties, 151–152