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402
MEASUREMENT
AND
DETECTION
OF
RADIATION
Shield
t.
Detector
--*
L
u
1
Figure
12.24
A
typical arrangement of the detector,
the shield, and the cryostat.
efficiency. Relative efficiencies are referenced in terms of the absolute full-en-
ergy peak efficiency of a 76 mm
X
76 mm (3 in
X
3 in) NaI(T1) crystal. The
measurement (or calculation) is based on the 1.33-MeV peak of 60~o. It is
assumed that a
60Co source of known strength is positioned 0.25 m away from
the face of the detector. A count is taken for a period of time, and the absolute
full-energy peak efficiency of the Ge(Li) detector is determined by dividing the
total number of counts under the 1.33-MeV peak (shaded area, Fig. 12.26) by
the number of photons emitted from the source during the same time period.
This absolute efficiency is divided by 1.2
x
lop3, which is the absolute efficiency
of a 3 in
x
3 in NaI(T1) crystal 0.25 m from the source, to give the relative
efficiency quoted in the specifications.
Absolute efficiencies as a function of energy for four types of Ge detectors
are shown in Figs. 12.27-12.30. In Fig. 12.27, a Ge wafer is used to make what
the manufacturer calls a low-energy Ge
(LEGe) detector. In this detector, a p
+
contact is fabricated on the front face and the cylindrical surface with implanted
boron; on the rear face, an n
+
contact is formed with lithium diffused along a
spot that is smaller than the full rear area of the device. The efficiency of this
detector is dropping for energies below 5 keV because of absorption in the Be
window; at the other end of the graph, the efficiency drops for
E
>
100 keV
because of a corresponding decrease in the value of the total linear attenuation
coefficient of gamma rays in Ge (Fig. 12.31). A coaxial Ge detector and its
efficiency are shown in Fig. 12.28. The contacts of this detector are formed by
diffused lithium
(n contact) and by implanted boron (p contact). The diffused-
lithium n contact is given by the manufacturer as 0.5 mm thick.
A
variation of
the coaxial detector, called the reverse-electrode (REGe) detector and its
efficiency are shown in Fig. 12.29. In the REGe detector the electrodes are
opposite to those of the "normal" coaxial: the p-type electrode (formed by
ion-implanted boron) is on the outside, and the n-type contact (formed by
diffused lithium) is on the inside. This electrode arrangement leads to decreased
window thickness (the p contact may be as thin as 0.3 pm; the Be window is
-
0.5 mm), which, in turn, results in higher efficiency at lower energy (compare
efficiency curves of Figs. 12.28 and 12.29). Finally, in Fig. 12.30 a Ge well-type