Crystal structure refinement
693
become complicated by the pseudosymmetry introduced when we derived
the coordinates of atoms assuming a monoclinic distortion of the
orthorhombic Gd5Ge4-type structure. The progress of Rietveld refinement is
illustrated in
Table
7.33.
Table
7.33. The progress of Rietveld refinement of the crystal structure of GdsSizGez using x-
ray powder diffraction data. Wavelengths used:
hKal
=
0.70932
A,
hKaz
=
0.71361
A.
Refined parameters R, R,D
RB
x2
Initial (profile parameters from Le Bail, model from 3x104 3x104 3x104 2x10'
Table
6.49,
overall
B
=
0.6
Scale factor
a
19.5 25.2 15.0 131.4
Scale and coordinates of all Gd atoms
a
9.19 11.9 6.85 29.4
Scale and coordinates of all Gd and SiIGe atomsa 6.51 8.53 4.46 15.2
Scale,
U,
V,
W,
q,
asymmetry,
a,
b,
c,
y,
sample 5.14 6.82 2.72 9.78
displacement, background, coordinates of all atoms,
overall displacement parameter, preferred orientation
along [001Ia
All, plus individual isotropic displacement parameters of 5.10 6.76 2.67 9.61
Gd atoms; SiIGe atoms displacements in overall
approximation; preferred orientation along [OOlIa
All as above plus occupancies of SiIGe sitesb 5.04 6.69 2.61 9.43
All parameters togetherb 5.03 6.69 2.59 9.41
a
Si and Ge atoms are distributed randomly and equally among four available
crystallographic sites.
Constrained to full occupancy, i.e.
gsi
+gee
=
100%.
The residuals steadily decrease when we include coordinates of Gd and
then SiIGe atoms into the least squares fit, followed by profile, lattice and
displacement parameters as seen in rows
2
through
6
in
Table
7.33. A
Fourier map, calculated at this point, reveals no additional atoms in the unit
cell. When compared to the two previously considered examples, an
additional degree of freedom in the
Gd5Si2Ge2 structure is the distribution of
the Si and Ge atoms among the corresponding lattice sites. Thus, as the next
step we will refine site occupancies constrained to full occupancy by Si/Ge
(i.e.
g~,
=
1
-
gsi).
Final refinement of all parameters converges to low
residuals, indicating that the model of the crystal structure is correct and
complete. The parameters of individual atoms in the crystal structure of
Gd5Si2Ge2 are listed in
Table
7.34 and found in the file
Ch7Exl2b.inp.
It is worth noting that the chemical composition of the material was not
restricted in any other way except to maintain the full occupancy of all Si/Ge
sites.' As follows from
Table
7.34, the chemical composition of the powder
is Gd5Si2.01(4,Ge1,99(4,, which is a nearly ideal match to the nominal
'
In some algorithms (e.g. GSAS), it is permissible to impose restrictions on chemical
composition, if the latter is known, by setting and fixing the total number of atoms of a
specific element in the unit cell during the refinement of population parameters.