146 Nuclear Medicine Physics
For each electron excited to the conduction band in a semiconductor, a hole
is created in the valence band whose mobility is only a fraction of the mobility
of the electrons. In this situation, conduction of an electric current may exist
if an electric field is applied. However, the electric conductivity is lower than
that of metal materials and depends on temperature.
A semiconductor that is free of impurities has an equal number of electrons
in the conduction band and holes in the valence band, as the electrons are
thermically excited; and there is a one-to-one relationship between electrons
and holes. A semiconductor with these characteristics is known as intrinsic
or undoped. Considering the concentration of electrons (n) in the conduction
band and the concentration of holes (p) in the valence band, it can be easily
inferred that, for an intrinsic semiconductor:
n = p. (5.8)
The doping of pure semiconductors with appropriate impurities leads to
situations in which the previous relationship is not maintained and, con-
sequently, there may be an excess of electrons or an excess of holes. The
materials obtained by this process are known as n-type semiconductors or
p-type semiconductors, respectively.
A semiconductor with two adjacent regions, a p-region and a n-region,
demonstrates properties suitable for use as radiation detector. In the pn junc-
tion, there is diffusion of electrons from the n to the p region and a diffusion of
holes in the opposite direction. This process creates a voltage difference in the
pn junction. Near the pn junction, a region is created—the depletion region—
in which thereis balance of chargecarriers. The depletion region has favorable
features as a means of detecting radiation, as any electron that is created in
this region is accelerated into the n side and any created hole is accelerated
into the p side. However, in a nonpolarized pn junction, the depletion region
is small and the junction capacitance is high; hence, the spontaneous electric
field generated is of low intensity and does not allow the charge carriers to
move quickly. For these reasons, the pn junction is generally polarized when
used as a radiation detector in real applications.
Figure 5.8 shows a diagram of a typical semiconductor detector. The radia-
tion interacts with the detector, perhapscausing ionization and, therefore, free
charges, which are accelerated by the imposed electric field. The charge cre-
ated is then collected by the polarization electrodes, generating an electrical
signal.
The incident photons are absorbed at the pn junction of the semiconductor
crystal, which is affected by a high-voltage difference, creating a large number
of electron–hole pairs. For each electron–hole pair produced, approximately
3–5 eV are expended on average, and the total number of pairs is proportional
to the gamma photon energy. With NaI (Tl) crystal, about 30 eV are needed to
create one ionization and to produce one scintillation within the crystal. The
number of electron–hole pairs produced is about 6–10 times greater than the
amount of scintillation.