3 Diffusion Studies of Solids by Quasielastic Neutron Scattering 127
Here N is the number density of the mobile ions, e the electron charge,
(n · e) the module of the charge of the mobile ions (n =1inthecaseof
hydrogen ions); k
B
is the Boltzmann constant, and T the temperature . The
relation between the atomic self-diffusion coefficient, D
s
, obtained from neu-
tron scattering by the nuclei of the diffusing ions, and the charge diffusion
coefficient, D
σ
, determined by the measurement of the ionic conductivity,
is defined by the Haven ratio, H
R
= D
s
/D
σ
. The latter quantity, a priori
unknown, takes into account correlation effects occurring in ion diffusion,
such as deviations from directional and/or temporal randomness of consec-
utive ion jumps and, perhaps even more important, cooperative phenomena
involving the correlated diffusive motion of more than one charge carrier. Be-
cause of the Coulomb interaction between neighbouring ions, such effects can
be particularly important in ionic conductors. Since correlation effects are
practically always present, H
R
may have values between slightly smaller or
larger than 1, but may also be larger than 1 by an order of magnitude, as in
the case of cation diffusion in LiNaSO
4
[81], or even larger by several orders
of magnitude, as observed with the PFG-NMR technique (see Chap. 10) in
the cubic phase of very pure NaOH [82]. The latter observations have been
explained as the result of cooperative ring exchange mechanisms with no or
minor charge separation. A cation leaving its site induces correlated jumps of
neighbouring ions in the opposite direction. While the original cation jump
still contributes to self-diffusion, the backward-correlated jumps of neigh-
bouring ions strongly reduce the efficiency of charge transport. Beyond the
mere measurement of D
s
, and of microscopic quantities, such as residence
times and jump distances, QENS can give access to further information on
such correlation phenomena [83], as will be discussed below.
At higher temperatures, atomic or ionic jump rates in the crystal lattice
may become so large, that they are no longer well separated from the lower
part of the phonon frequencies. As a consequence, even at very low concen-
trations of the mobile particles (high concentration of empty sites) the simple
CE model breaks down, memory effects appear, i.e. the diffusing atom “re-
members” part of its history, and therefore a step of the diffusional motion
will to some extent depend on the previous step(s). This effect is mediated
by the lattice during the time of mechanical relaxation from the local dis-
tortion caused by the diffusing ion. Thus phonons may assist the diffusion
process (see Sect. 3.7) and for instance lead to more than one consecutive
nearest-neighbour jump at a time. An example for this case has already been
discussed in Sect. 3.5.
If, however, the concentration of diffusing species is high (low concentra-
tion of vacancies), it becomes necessary to take account of the correlations
between different diffusing ions, because the probability of neighbouring sites
being blocked due to the presence of other mobile particles, is finite. Since
the theoretical treatment is very difficult, Monte Carlo techniques have been
employed. At sufficiently high ion concentration, the problem can be treated