Ghodssi R., Lin P., MEMS Materials and Processes Handbook
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554 D.W. Burns
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
93 Nichrome (NiCr),
sputtered (80:20)
14 Ceric ammonium nitrate 20
◦
C; Transene nichrome etchant TFN; mask with Pr;
Etches Al (8 Å/s), Cr (28 Å/s), Cu (115 Å/s), Mo (115 Å/s), Ni (2 Å/s);
Doesn’t significantly etch polyimide, quartz, Si, Si(poly), Si
3
N
4
,
SiO
2
; DI water rinse [28]
94 Nichrome (NiCr),
evaporated
50 Ceric ammonium nitrate 40
◦
C; Transene nichrome etchant TFN; mask with PR;
Etches Al, Cr, Cu, GaAs, Ni;
Doesn’t significantly etch Au, Si
3
N
4
,SiO
2
, Ti, W; DI water rinse
[310]
95 Nickel (Ni), deposited 65 H
2
SO
4
(96%):
H
2
O
2
(30%)
56:1
120
◦
C; high-sulfuric piranha;
Etches Ag (100 Å/s), Al(850 Å/s), AlSi(2%) (30 Å/s), Al
2
O
3
(3–15 Å/s), Cr (1–3 Å/s), Cu (15 Å/s), Mo (3 Å/s), Nb (1 Å/s), NiCr
(15 Å/s), polyimide (2800 Å/s), Ti (40 Å/s);
Etches slightly Parylene type C (0.4 Å/s), Pt (0.5 Å/s), TiW (0.1 Å/s);
Doesn’t significantly etch Au, Pyrex (roughens), quartz (roughens),
sapphire (roughens), Si, Si(poly), SiGe(poly), Si
3
N
4
,SiO
2
,Ta
(thickens); exothermic; add H
2
O
2
immediately prior to use; DI
water rinse [27, 28]
96 Nickel (Ni), deposited H
2
SO
4
(96%):
H
2
O
2
(30%)
1:4
60
◦
C; doesn’t significantly etch NiSi
2
,Si,SiO
2
; DI water rinse [311,
312]
97 Nickel (Ni) H
2
SO
4
(96%):
H
3
PO
4
(85%):
HNO
3
(70%):Acetic
1:1:3:5
85–95
◦
C; DI water rinse [53]
98 Nickel (Ni) H
2
SO
4
(96%):
H
3
PO
4
(85%):
HNO
3
(70%):Acetic
1:1:3:5
40
◦
C; doesn’t significantly etch NiSi
2
; DI water rinse [97]
8 MEMS Wet-Etch Processes and Procedures 555
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
99 Nickel (Ni) HCl(38%): H
2
O
2
(30%)
3:1
Room temperature; doesn’t significantly etch NiSi
2
; DI water rinse
[97]
100 Nickel (Ni),
nickel–cobalt (NiCo)
HCl(38%):
HNO
3
(70%):Acetic
1:80:120
20
◦
C; DI water rinse [53, 313]
101 Nickel (Ni), deposited HCl(38%):
HNO
3
(70%):H
2
O
5:1:3
Room temperature; selective to NiSi
2
;DIwaterrinse[314]
102 Nickel (Ni), deposited 17 HCl(38%):
HNO
3
(70%):H
2
O
3:1:2
30
◦
C; dilute aqua regia; mask with PR;
Etches Ag, Al (100 Å/s), AlSi(2%), Au (115 Å/s), Cu (100 Å/s), Mo
(110 Å/s), Pd (65 Å/s), Pt (0.6 Å/s), W (1 Å/s);
Etches slightly Al
2
O
3
(0.2 Å/s), SiO
2
(PECVD) (0.1 Å/s), Ta
(0.3 Å/s), Ti (0.1 Å/s), TiW (0.6 Å/s);
Doesn’t significantly etch Cr, Nb, polyimide, quartz, sapphire, Si,
Si(poly), Si
3
N
4
,SiO
2
, Ta; water added to reduce PR attack;
self-heating; DI water rinse [28]
103 Nickel (Ni), deposited HF(49%): HNO
3
(70%)
1:1
Room temperature; dilute with H
2
O to reduce e tch rate; DI water rinse
[315]
104 Nickel (Ni) HNO
3
(70%)
undiluted
Room temperature; dilute with H
2
O to reduce e tch rate; DI water rinse
[12]
105 Nickel (Ni), sputtered 17 HNO
3
(70%):H
2
O
1:20
45
◦
C; DI water rinse [316]
106 Nickel (Ni) HNO
3
(70%):
H
2
SO
4
(96%):Acetic
3:2:3
Room temperature; etches Cu and Cu alloys at similar rate; dilute with
H
2
O for reduced rate; DI water rinse [288]
556 D.W. Burns
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
107 Nickel (Ni) 1600 HNO
3
(70%):
H
2
SO
4
(96%):
H
3
PO
4
(85%):Acetic
3:1:1:5
85
◦
C; DI water rinse [317]
108 Nickel (Ni), evaporated
or sputtered with Cr,
Au
30 Nitric acid, potassium
perfluoroalkyl
sulfonate
25
◦
C; Transene nickel etchant TFB; mask with PR;
Etches Al, Cr, Cu, GaAs;
Doesn’t significantly etch Au, Si
3
N
4
,SiO
2
, Ti, W; glass tank; DI
water rinse [318]
109 Nickel (Ni), electroless
or electroplated on
GaAs or Cu
50 Nitrate-based 40
◦
C; Transene nickel etchant TFG; mask with PR;
Etches Al;
Doesn’t significantly etch Au, Cr, Cu, Si, Si
3
N
4
,SiO
2
, Ti, W, GaAs,
Ta, TaN; glass tank; DI water rinse [318]
110 Nickel-Phosphorus
(NiP, 90:10)
H
3
PO
4
(85%):
HNO
3
(70%)
9:1
Room temperature; DI water rinse [91]
111 Niobium (Nb) 11 H
2
SO
4
(96%)
undiluted
175
◦
C; DI water rinse [319]
112 Niobium (Nb) HCl(38%): HF(49%):
HNO
3
(70%):H
2
O
2:1:2:2
Room temperature; DI water rinse [53]
113 Niobium (Nb) HF(49%):H
2
O
1:1
Room temperature; DHF etchant (1:1); DI water rinse [319]
114 Niobium (Nb) HF(49%): HNO
3
(70%)
1:1
Room temperature; DI water rinse [98]
115 Osmium (Os) HCl(38%): HNO
3
(70%)
3:1
Warm; aqua regia; DI water rinse [320]
116 Palladium (Pd) HCl(38%): HNO
3
(70%)
3:1
Room temperature; aqua regia; DI water rinse [320]
8 MEMS Wet-Etch Processes and Procedures 557
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
117 Palladium (Pd),
evaporated
15 HCl(38%):
HNO
3
(70%):Acetic
1:10:10
25
◦
C; DI water rinse [321]
118 Palladium (Pd),
deposited
65 HCl(38%):
HNO
3
(70%):H
2
O
3:1:2
30
◦
C; dilute aqua regia; mask with PR;
Etches Ag, Al (100 Å/s), AlSi(2%), Au (115 Å/s), Cu (100 Å/s), Mo
(110 Å/s), Ni (17 Å/s), Pt (0.6 Å/s), W (1 Å/s);
Etches slightly Al
2
O
3
(0.2 Å/s), SiO
2
(PECVD) (0.1 Å/s), Ta
(0.3 Å/s), Ti (0.1 Å/s), TiW (0.6 Å/s);
Doesn’t significantly etch Cr, Nb, polyimide, quartz, sapphire, Si,
Si(poly), Si
3
N
4
,SiO
2
, Ta; water added to reduce PR attack;
self-heating; DI water rinse [28]
119 Palladium (Pd) HNO
3
(70%)
undiluted
Hot; DI water rinse [320]
120 Palladium (Pd),
sputtered
KI:I
2
:H
2
O 10 g:1 g:40
mL
Room temperature; selective to PdSi
2
; DI water rinse [322]
121 Palladium (Pd),
evaporated or
sputtered
110 Ferric chloride and
hydrogen chloride
[323]
50
◦
C; Transene palladium etchant TFP; mask with PR;
Doesn’t significantly etch Au, Ni; glass, Pyrex or PVC tank; DI water
rinse [324]
122 Permalloy (NiFeMo),
sputtered
65 H
2
SO
4
(96%):
HF(49%):
H
2
O
2
(30%):H
2
O
6:1:1:22
23
◦
C; Ni:Fe:Mo 79:16:5 wt%; DI water rinse [325]
123 Platinum (Pt) H
2
O
2
(30%)
undiluted
Boiling; DI water rinse [45]
124 Platinum (Pt), sputtered 5 HCl(38%): HNO
3
(70%)
19:1
Boiling; hard-bake PR; DI water rinse [326]
558 D.W. Burns
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
125 Platinum (Pt) HCl(38%): HNO
3
(70%)
8:1
70
◦
C; DI water rinse [98]
126 Platinum (Pt), deposited HCl(38%):
HNO
3
(70%):H
2
O
3:1:4
45
◦
C; dilute aqua regia; DI water rinse [327]
127 Platinum (Pt), deposited HCl(38%):
HNO
3
(70%):H
2
O
3:1:4
85
◦
C; dilute aqua regia; precede with brief BHF etch; DI water rinse
[328]
128 Platinum (Pt), CVD 8 HCl(38%):
HNO
3
(70%):H
2
O
7:1:8
85
◦
C; DI water rinse [329, 330]
129 Platinum (Pt) HF(49%): HNO
3
(70%)
4:1
Hot; DI water rinse [53]
130 Rhenium (Re) H
2
SO
4
(96%)
undiluted
Hot; DI water rinse [320]
131 Rhenium (Re) HNO
3
(70%):H
2
O
1:1
Room temperature; DI water rinse [25]
132 Rhodium (Rh) H
2
SO
4
(96%)
undiluted
Hot; DI water rinse [320]
133 Rhodium (Rh) HCl(38%): HNO
3
(70%)
3:1
Room temperature; aqua regia; DI water rinse [26]
134 Ruthenium (Ru) HCl(38%): HNO
3
(70%)
3:1
Warm; aqua regia; DI water rinse [320]
135 Ruthenium (Ru),
evaporated or
sputtered
40–50 Ceric ammonium
nitrate, nitric acid
20–25
◦
C; Transene ruthenium etchant RU-44; mask with PR; glass or
polypropylene tank; DI water rinse [331]
136 Silver (Ag) H
2
SO
4
(96%)
undiluted
Hot; DI water rinse [320]
8 MEMS Wet-Etch Processes and Procedures 559
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
137 Silver (Ag), deposited 100 H
2
SO
4
(96%):
H
2
O
2
(30%)
56:1
120
◦
C; high-sulfuric piranha;
Etches Al (850 Å/s), AlSi(2%) (30 Å/s), Al
2
O
3
(3–15 Å/s), Cr
(1–3 Å/s), C u (15 Å/s), Mo (3 Å/s), Nb (1 Å/s), Ni (65 Å/s), NiCr
(15 Å/s), polyimide (2800 Å/s), Ti (40 Å/s);
Etches slightly Parylene type C (0.4 Å/s), Pt (0.5 Å/s), TiW (0.1 Å/s);
Doesn’t significantly etch Au, Pyrex (roughens), quartz (roughens),
sapphire (roughens), Si, Si(poly), SiGe(poly), Si
3
N
4
,SiO
2
,Ta
(thickens); exothermic; add H
2
O
2
immediately prior to use; DI
water rinse [27, 28]
138 Silver (Ag) HCl(38%): HNO
3
(70%)
3:1
Room temperature; aqua regia; DI water rinse [320]
139 Silver (Ag) 1600 HNO
3
(70%):H
2
O
7:1
Room temperature; DI water rinse [332]
140 Silver (Ag) 2000–4000 HNO
3
(70%):H
2
O
1:1 to 1:10
40–50
◦
C; DI water rinse [10]
141 Silver (Ag) NH
4
OH(29%):
H
2
O
2
(30%)
1:1
Room temperature; DI water rinse [26, 45]
142 Silver (Ag) 60 NH
4
OH(29%):
H
2
O
2
(30%):Acetic
1:1:4
Room temperature; DI water rinse [8]
143 Silver (Ag), deposited 200 KI, I
2
25
◦
C; Transene silver etchant TFS; mask with PR;
Etches Al, Au, GaAs; glass tank;
Doesn’t significantly etch Cr, Si, Si
3
N
4
,SiO
2
, Ta, TaN, Ti, W; agitate
for higher etch rate; DI water rinse [333]
560 D.W. Burns
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
144 Silver (Ag), deposited 75 Ceric ammonium
nitrate, nitric acid
20
◦
C; Cyantek CR-7; mask with PR;
Etches Al (6 Å/s), Cr (25 Å/s), Cu (45 Å/s), Ge(poly) (45 Å/s), NiCr
(2 Å/s), V (10 Å/s);
Etches slightly Al
2
O
3
(<0.1 Å/s), graphite (0.1 Å/s), Mo (0.5 Å/s), Ni
(0.3 Å/s), quartz (0.1 Å/s), SiGe(poly) (<0.1 Å/s), SiO
2
(<0.01 Å/s),
Ta (0.1 Å/s), Ti(0.3 Å/s), TiW (0.1 Å/s), W (0.5 Å/s);
Doesn’t significantly etch Au, Nb, Pd, polyimide, Pt, Pyrex, sapphire,
Si, Si(poly), Si
3
N
4
,SiO
2
; DI water rinse [28]
145 Steel, low-carbon H
2
SO
4
(96%):
H
2
O
2
(30%):H
2
O
15:90:10
25
◦
C; DI water rinse [53]
146 Steel, low-carbon H
2
SO
4
(96%):
H
3
PO
4
(85%):
HNO
3
(70%)
1:3:1
85
◦
C; DI water rinse [53]
147 Steel, medium-carbon HF(49%):
H
2
O
2
(30%):H
2
O
1:10:10
Room temperature; DI water rinse [53]
148 Steel, stainless (SS) H
3
PO
4
(85%):
HCl(38%):
HNO
3
(70%):Acetic
1:1:4:5
70
◦
C; DI water rinse [53]
8 MEMS Wet-Etch Processes and Procedures 561
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
149 Steel, stainless (SS) HCl(38%):
HNO
3
(70%):H
2
O
1:1:1
Room temperature; DI water rinse [92]
150 Tantalum (Ta) H
2
SO
4
(96%):
HF(49%):
HNO
3
(70%)
5:2:2
Room temperature; DI water rinse [334, 335]
151 Tantalum (Ta) H
3
PO
4
(85%)
undiluted
180
◦
C; DI water rinse [336, 337]
152 Tantalum (Ta), PVD 0.8 HF(49%):H
2
O
1:10
25
◦
C; DI water rinse [338]
153 Tantalum (Ta) HF(49%): HNO
3
(70%)
1:2
Room temperature; add water to slow etch; DI water rinse [16]
154 Tantalum (Ta) HF(49%):
HNO
3
(70%):H
2
O
2:2:5
Room temperature; DI water rinse [98]
155 Tantalum (Ta),
deposited
70–80 Hydrofluoric acid 25
◦
C; Transene tantalum etch SIE-8607; mask with PR;
Etches Al, Cr, Cu, GaAs, Ni, Si, SiO
2
, Ta, TaN, Ta
2
O
5
,Ti;
Doesn’t significantly etch Au, Si
3
N
4
, W; DI water rinse [254]
156 Thorium (Th) HCl(38%)
undiluted
20
◦
C; DI water rinse [339]
157 Thorium (Th) HCl(38%): HNO
3
(70%)
3:1
20
◦
C; DI water rinse [339]
158 Tin (Sn) HCl(38%)
undiluted
Room temperature; DI water rinse [340]
159 Tin (Sn) HCl(38%):H
2
O
1:4
Room temperature; DI water rinse [98]
562 D.W. Burns
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
160 Tin (Sn) HCl(38%):HF(49%)
1:1
Room temperature; DI water rinse [98]
161 Tin (Sn) HCl(38%): HNO
3
(70%)
3:1
Room temperature; DI water rinse [26]
162 Tin (Sn), deposited HF(49%): HNO
3
(70%)
1:1
Room temperature; DI water rinse [76]
163 Tin–nickel (SnNi),
electroplated
3 HCl(38%):H
2
O
1:3
25
◦
C; Room temperature; Sn:Ni 65:35 wt%; etches SnNo 5 Å/s at
50
◦
C, 9 Å/s at 75
◦
C; DI water rinse [341]
164 Titanium (Ti) See Table 8.8
165 Tungsten (W) See Table 8.8
166 Vanadium (V),
deposited
H
2
SO
4
(96%):
HF(49%):
HNO
3
(70%)
5:2:2
Room temperature; DI water rinse [45]
167 Vanadium (V) H
3
PO
4
(85%)
undiluted
180
◦
C; DI water rinse [342]
168 Vanadium (V) HCl(38%): HF(49%):
HNO
3
(70%):H
2
O
2:1:2:2
Room temperature; DI water rinse [53]
169 Vanadium (V) HCl(38%): HNO
3
(70%)
3:1
Room temperature; aqua regia; DI water rinse [26]
170 Vanadium (V), CVD HF:HNO
3
(70%)
1:10
Room temperature; DI water rinse [343]
171 Vanadium (V), CVD HF:HNO
3
(70%): H
2
O
1:1:1
Room temperature; HNW etchant; DI water rinse [98]
172 Vanadium (V) HNO
3
(70%):H
2
O
1:3
35
◦
C; DI water rinse [342]
8 MEMS Wet-Etch Processes and Procedures 563
Table 8.19 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
173 Vanadium (V),
deposited
NH
4
OH(29%):
H
2
O
2
(30%)
1:4
Room temperature; DI water rinse [344]
174 Yttrium (Y) HNO
3
(70%)
undiluted
Room temperature; DI water rinse [345, 346]
175 Zinc (Zn) HCl(38%):H
2
O
1:1
Room temperature; DI water rinse [26]
176 Zinc (Zn) 4000 HNO
3
(70%):H
2
O
1:4
50
◦
C; DI water rinse [10]
177 Zinc (Zn) HNO
3
(70%):
H
2
O
2
(30%):Ethanol
1:1:1
Room temperature; DI water rinse [53]
178 Zirconium (Zr) H
2
SO
4
(96%)
undiluted
Hot; DI water rinse [347]
179 Zirconium (Zr) HCl(38%)
undiluted
Hot; DI water rinse [347]
180 Zirconium (Zr) HCl(38%): HNO
3
(70%)
3:1
60
◦
C; aqua regia; DI water rinse [347]
181 Zirconium (Zr) HF(49%):
HNO
3
(70%):H
2
O
1:5:5
Room temperature; HNW etchant; can substitute H
2
O
2
for H
2
O; DI
water rinse [348]
182 Zirconium (Zr) HF(49%):
HNO
3
(70%):H
2
O
1:1:50
Room temperature; HNW etchant; DI water rinse [98]