Ghodssi R., Lin P., MEMS Materials and Processes Handbook
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534 D.W. Burns
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
141 Indium gallium
arsenide
(InGaAs), MBE
14 H
3
PO
4
(85%):
H
2
O
2
(30%):H
2
O
1:1:50
25
◦
C; use citric acid system for higher selectivity to AlGaAs; DI
water rinse [136]
142 Indium gallium
arsenide
phosphide
(InGaAsP), LPE
115 H
2
SO
4
(96%):
H
2
O
2
(30%):H
2
O
3:1:1
20
◦
C; etch rate is 265 Å/s at 30
◦
C; etches InP (2 Å/s) at 20
◦
C, (5 Å/s)
at 30
◦
C; DI water rinse [214, 215]
143 Indium gallium
arsenide
phosphide
(InGaAsP),
MOCVD
1.3 H
2
SO
4
(96%):
HCl(38%):
H
2
O
2
(30%):H
2
O
1:1600:10:2000
23
◦
C; similar etch rates for GaAs and InGaP; DI water rinse [216]
144 Indium gallium
phosphide
(InGaP), OMVPE
6H
2
SO
4
(96%)
undiluted
70
◦
C; DI water rinse [139]
145 Indium gallium
phosphide
(InGaP), MBE
15 H
3
PO
4
(85%):
HCl(38%):H
2
O
1:1:1
25
◦
C; etch rate increases with less water and less H
3
PO
4
; DI water
rinse [217]
146 Indium gallium
phosphide
(InGaP), MOCVD
330 HCl(38%)
undiluted
25
◦
C; etch rate decreases rapidly with H
2
O dilution; etch rate
increases with HNO
3
addition; slow etch rate (4 Å/s) in
concentrated HNO
3
; selective to GaAs; DI water rinse [218]
147 Indium gallium
phosphide
(InGaP), MOCVD
200 HCl(38%):
HNO
3
(70%):H
2
O
1:1:1
25
◦
C; etch rate for In
0.5
Ga
0.5
P; increasing HNO
3
or HCl
concentration increases etch rate; decreasing HNO
3
concentration
increases selectivity to GaAs; DI water rinse [141]
8 MEMS Wet-Etch Processes and Procedures 535
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
148 Indium gallium
phosphide
(InGaP), OMVPE
25 HCl(38%):
H
2
O
2
(30%):Acetic
1:1:10
20
◦
C; DI water rinse [187, 219]
149 Indium gallium
phosphide
(InGaP), OMVPE
12 HCl(38%):Acetic
1:20
20
◦
C; etch rate for In
0.48
Ga
0.52
P; etched surface can be rough; add
peroxide for smoother surfaces (although selectivity to GaAs
decreases);
Etches InP (65 Å/s);
Doesn’t significantly etch GaAs (<1 Å/s) [187]
150 Indium oxide
(In
2
O
3
), sputtered
1.4 H
2
SO
4
(96%)
undiluted
50
◦
C; film doped with Sn; mask with Cr; DI water rinse [220]
151 Indium oxide
(In
2
O
3
), CVD
HCl(38%)
undiluted
Warm; Sn-doped film; DI water rinse [221]
152 Indium phosphide
(InP)
3100 HCl(38%)
undiluted
26
◦
C; anisotropic; doesn’t significantly etch InGaAsP; DI water rinse
[215, 222, 223]
153 Indium phosphide
(InP)
HCl(38%):H
2
O
3:1
Room temperature; anisotropic etchant with highest etch rate in <100>
directions;
Etches In
0.52
Al
0.48
As (115 Å/s);
Doesn’t significantly etch InGaAs; consider HCl:H
3
PO
4
or
HCl:H
3
PO
4
:Acetic etchants; does not etch in peroxide-based
etchants; DI water rinse [224]
154 Indium phosphide
(InP)
65 HCl(38%):Acetic
1:20
20
◦
C; etched surface can be rough; add peroxide for smoother
surfaces (though selectivity to GaAs decreases);
Etches In
0.48
Ga
0.52
P (12 Å/s);
Doesn’t significantly etch GaAs (<1 Å/s) [187]
536 D.W. Burns
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
155 Indium phosphide
(InP)
40 HCl(38%):
H
2
O
2
(30%):Acetic
1:1:10
20
◦
C; DI water rinse [187]
156 Indium phosphide
(InP)
15 HCl(38%):
H
2
O
2
(30%):H
2
O
1:1:1
25
◦
C; DI water rinse [223]
157 Indium phosphide
(InP)
450 HCl(38%):
H
3
PO
4
(85%)
1:1
35
◦
C; (100) surface; preferential etchant; light sensitive; selective to
InGaAsP; DI water rinse [225]
158 Indium phosphide
(InP)
5600 HCl(38%):
HNO
3
(70%)
1:1
26
◦
C; anisotropic; DI water rinse [222]
159 Indium phosphide
oxide (InPO)
H
2
SO
4
(96%):
H
2
O
2
(30%):H
2
O
5:1:1
Cleaning cycle; DI water rinse [226]
160 Indium phosphide
oxide (InPO)
HF(49%):H
2
O
1:1
Room temperature; DHF etchant (1:1); also etches in HCl and H
2
SO
4
;
DI water rinse [226, 227]
161 Indium tin oxide
(ITO), sputtered
3 HCl(38%):H
2
O
1:1
50
◦
C; DI water rinse [228, 229]
162 Indium tin oxide
(ITO), deposited
7 HCl(38%):H
2
O
4:1
40
◦
C; DI water rinse [167, 230]
163 Indium tin oxide
(ITO), deposited
11 HCl(38%):
HNO
3
(70%)
3:1
40
◦
C; aqua regia; DI water rinse [230]
164 Indium tin oxide
(ITO), deposited
3.3 HCl(38%):
HNO
3
(70%):H
2
O
50:1:25
Room temperature; DI water rinse [231]
8 MEMS Wet-Etch Processes and Procedures 537
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
165 Indium tin oxide
(ITO), sputtered
HF(49%)
undiluted
Room temperature; HF etchant (49 wt%); DI water rinse [232]
166 Indium tin oxide
(ITO)
15–20 Proprietary 40–50
◦
C; Transene indium tin oxide etchant TE-100; mask with PR;
strong agitation;
Etches Ni, Cu, NiCr and Al; DI water rinse [233]
167 Iron oxide (FeO),
CVD
HCl(38%):H
2
O
1:1
25–50
◦
C; DI water rinse [234]
168 Iron oxide (FeO) HF(49%):H
2
O
1:10
Little or no loss of Fe; DHF etchant (10:1); DI water rinse [25]
169 Iron oxide (FeO) 50 Dilute acid 25
◦
C; Transene iron oxide mask etchant, ME-10; mask with PR; etch
rates dependent on thermal history of Fe
2
O
3
and can become
insoluble; glass or polypropylene tank; mild agitation; DI water
rinse [235]
170 Lead oxide (Pb
2
O
3
) HNO
3
(70%)
undiluted
DI water rinse [25]
171 Lead selenide (PbSe) 160–500 KOH:H
2
O
2
(30%):
H
2
O:ethylene
glycol
150 g:1 mL: 180
mL:150 mL
35
◦
C; nonstandard chemicals; etch rate increases with agitation;
replenish with peroxide; DI water rinse [236]
172 Lead sulfide (PbS) HCl(38%):
HNO
3
(70%):Acetic
30:10:1
50
◦
C; rinse with 1:9 Acetic:H
2
OthenDIwater[237]
173 Lead sulfide (PbS) HNO
3
(70%)
undiluted
70
◦
C; remove sulfur on surface with DI water rinse [237]
538 D.W. Burns
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
174 Lead telluride
(PbTe)
KOH:H
2
O
2
(30%):
H
2
O:ethylene
glycol
300 g:1 mL: 330
mL:300 mL
35
◦
C; nonstandard chemicals; DI water rinse [236]
175 Lead–zirconium–
titanate (PZT),
sputtered or
sol-gel
500–1000 HCl(38%):
HF(49%):H
2
O
300:2:700
56
◦
C; DI water rinse [238]
176 Lead–zirconium–
titanate (PZT),
sheet
500 HCl(38%)
undiluted
60
◦
C; etches 250 Å/s at 30
◦
C; DI water rinse [239]
177 Lithium niobate
(LiNbO
3
)
1.3 HF(49%):H
2
O
1:8
50
◦
C; DHF etchant (8:1); rate can be increased with local ion damage;
DI water rinse [240]
178 Lithium niobate
(LiNbO
3
)
20 HF(49%):
HNO
3
(70%)
1:2
Room temperature; proton-exchanged substrate; DI water rinse [241]
179 Lithium niobate
(LiNbO
3
)
1 HF(49%):
HNO
3
(70%)
1:2
Room temperature; proton-exchanged substrate; DI water rinse [241]
180 Lithium niobate
(LiNbO
3
)
HF(49%):
HNO
3
(70%)
1:2
110
◦
C; DI water rinse [242]
181 Magnesium
aluminum oxide
(MgAl
2
O
4
,
spinel)
85 H
2
SO
4
(96%):
H
3
PO
4
(85%)
3:1
285
◦
C; (110); doesn’t etch significantly in HF, phosphoric or sulfuric
acids; use platinum holder and flask; DI water rinse [151]
8 MEMS Wet-Etch Processes and Procedures 539
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
182 Magnesium oxide
(MgO), sputtered
23 Acetic:H
2
O
1:100
Room temperature; etches MgO at 1 Å/s for acetic:H
2
O 1:1000; PR
mask; DI water rinse [243]
183 Magnesium oxide
(MgO), crystalline
10 H
2
SO
4
(96%):H
2
O
1:1
21C
◦
; etches 420 Å/s a t 77
◦
C; DI water rinse [244]
184 Magnesium oxide
(MgO), crystalline
H
2
SO
4
(96%):
H
3
PO
4
(85%)
1:40
160
◦
C; (111) surface; similar for (100) and (110) surfaces; DI water
rinse [245]
185 Manganese dioxide
(MnO
2
)
HNO
3
(70%):
H
2
O
2
(30%):H
2
O
1:1:18
Room temperature; DI water rinse [246]
186 Mercury selenide
(HgSe)
HCl(38%):
HNO
3
(70%):H
2
O
6:2:3
25
◦
C; preferential etchant; DI water rinse [168]
187 Mercury selenide
(HgSe)
HNO
3
(70%):
H
2
SO
4
(18 N):
HCl(38%):Acetic
50:20:1:10
40
◦
C; pitless polish etchant; DI water rinse [168]
188 Mercury telluride
(HgTe)
HNO
3
(70%):
HCl(38%)
1:1
25
◦
C; preferential etchant; DI water rinse [168]
189 Mercury telluride
(HgTe)
HNO
3
(70%):
HCl(38%):H
2
O
6:1:1
25
◦
C; pitless polish etchant; DI water rinse [168]
190 Molybdenum
trioxide (MoO
3
)
NH
4
OH(29%):
H
2
O
2
(30%)
9:1
DI water rinse [25]
540 D.W. Burns
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
191 Niobium oxide
(Nb
2
O
5
), CVD
HF(49%)
undiluted
Room temperature; HF etchant (49 wt%); doesn’t significantly etch in
BHF; low etch rate in phosphoric and sulfuric acids; DI water rinse
[25]
192 Pyrex (borosilicate
glass, Corning
7740)
300 HF(49%):H
2
O
1:1
25
◦
C; DHF etchant (1:1); also etches in BHF; see Section 8.3.1;DI
water rinse [25]
193 Quartz 50 HF(49%):H
2
O
1:1
25
◦
C; DHF etchant (1:1); also etches in BHF; see Section 8.3.1;DI
water rinse [25]
194 Selenium (Se) H
2
SO
4
(96%)
undiluted
Hot; DI water rinse [247]
195 Silicon (Si) See Tables 8.7 and 8.22
196 Silicon carbide
(SiC), deposited
H
3
PO
4
(85%)
undiluted
180
◦
C; amorphous film only; use dry processes, hot gases, or molten
salts with platinum containers [248, 249]
197 Silicon carbide
(SiC), p
–
cubic
SiC deposited on
Si
HCl(38%):
HF(49%):H
2
O
1:1:50
Electrochemical etch; room temperature; anodic etching; 2-terminal
configuration; mask with PR; SS clip to sample; SS electrode in
solution; current density of 96.4 mA/cm
2
[250]
198 Silicon carbide
(SiC), single
crystal
65 HF(49%):H
2
O
1:20
Photoelectrochemical etch; DHF etchant (20:1); room temperature;
n-SiC; faster anodization rate for p-SiC (360 Å/s); anodize in HF
solution with light (n-type) or dark (p-type) to about 55% porosity,
then oxidize in wet nitrogen at 1150
◦
C and etch resulting oxide in
HF; DI water rinse [251]
199 Silicon carbide (SiC) HF(49%):
HNO
3
(70%)
6:1
60
◦
C; slow etch rate; DI water rinse [21]
200 Silicon carbide
(SiC), substrate
1.3 Potassium
hexacyanoferrate
80
◦
C; Transene gallium phosphide etchant; mask with negative PR,
Ti, SiO
2
, Au or KMER; Etches SiC;
Doesn’t significantly etch Pd, Au or Pt; DI water rinse [252]
8 MEMS Wet-Etch Processes and Procedures 541
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
201 Silicon dioxide
(SiO
2
)
See Table 8.5
202 Silver oxide (Ag
2
O) NH
4
OH(29%):H
2
O
1:4
DI water rinse [25]
203 Tantalum carbide
(TaC)
HF:HNO
3
(70%):
H
2
O
1:1:1
Room temperature; HNA etchant; DI water rinse [253]
204 Tantalum nitride
(TaN)
HF(49%):
HNO
3
(70%)
1:1
Warm; DI water rinse [21]
205 Tantalum nitride
(TaN)
Hydrofluoric acid 25
◦
C; Transene tantalum etch 111; mask with PR, Au, Si
3
N
4
,W;
Etches Al, Cr, Cu, GaAs, Ni, Si, SiO
2
,Ta
2
O
5
, Ti; DI water rinse [254]
206 Tantalum oxide
(Ta
2
O
5
), CVD
HF(49%)
undiluted
Room temperature; HF etchant (49 wt%); amorphous form; medium
etch rate in BHF; crystalline form doesn’t significantly etch in HF,
phosphoric or sulfuric acids; DI water rinse [25]
207 Tantalum oxide
(Ta
2
O
5
)
Hydrofluoric acid 25
◦
C; Transene tantalum etch 111; mask with Au, PR, Si
3
N
4
,W;
Etches Al, Cr, Cu, GaAs, Ni, Si, SiO
2
, TaN, Ti; DI water rinse [254]
208 Tellurium (Te) H
2
SO
4
(96%)
undiluted
Room temperature; DI water rinse [255]
209 Tellurium (Te) 1600 HCl(38%):
HNO
3
(70%):H
2
O
3:1:1
Room temperature; dilute aqua regia; DI water rinse [256]
210 Tellurium (Te) HNO
3
(70%):H
2
O
2:3
Room temperature; DI water rinse [25]
211 Tin oxide (SnO
2
) 50 HCl(38%):H
2
O
1:3 to 1:10
Electrochemical etch; room temperature; 40 mA/cm
2
;maskwith
SiO
2
; resistant to room-temperature nitric, sulfuric, hydrochloric
and hydrofluoric acids; DI water rinse [257]
542 D.W. Burns
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
212 Titanium dioxide
(TiO
2
), CVD
HF(49%)
undiluted
Room temperature; HF etchant (49 wt%); crystalline form; BHF okay
for unannealed, amorphous films; also etches in phosphoric and
sulfuric acids; DI water rinse [25]
213 Titanium nitride
(TiN), reactive
sputtered
10 HCl(38%):
HF(49%):
HNO
3
(70%)
15:1:5
Room temperature; DI water rinse [258]
214 Titanium nitride
(TiN), reactive
sputtered
9 HF(49%):
HNO
3
(70%):Acetic
1:20:20
30
◦
C; HNA etchant; DI water rinse [258]
215 Titanium nitride
(TiN), sputtered
NH
4
OH(29%):
H
2
O
2
(30%):H
2
O
3:1:2
Room temperature; DI water rinse [259]
216 Titanium nitride
(TiN), ALD,
CVD, PVD
0.1–0.3 NH
4
OH(29%):
H
2
O
2
(30%):H
2
O
1:1:10
Room temperature; DI water rinse [260]
217 Titanium nitride
(TiN), sputtered
4.5 NH
4
OH(29%):
H
2
O
2
(30%):H
2
O
1:1:5
75
◦
C; etches slightly CoSi (<0.1 Å/s); DI water rinse [261]
218 Vanadium oxide
(V
2
O
5
), CVD
HF(49%):H
2
O
1:9
Room temperature; DHF etchant (9:1); not all forms of VO are etched;
DI water rinse [262, 263]
219 Zinc oxide (ZnO),
sputtered
130 H
3
PO
4
(85%):
Acetic:H
2
O
1:100:100
20
◦
C; etches rapidly in concentrated HCl and HNO
3
; DI water rinse
[264]
220 Zinc oxide (ZnO),
sputtered
250 H
3
PO
4
(85%):
Acetic:H
2
O
1:1:10
20
◦
C; DI water rinse [264]
8 MEMS Wet-Etch Processes and Procedures 543
Table 8.18 (continued)
Material
Etch rate
(Å/s) Etchant Remarks and references
221 Zinc oxide (ZnO),
sputtered
500 H
3
PO
4
(85%):
Acetic:H
2
O
1:1:50
Room temperature; higher lateral etch rate; DI water rinse [265]
222 Zinc oxide (ZnO),
sputtered
170–230 HCl(38%):H
2
O
1:40
25
◦
C; rate sensitive to deposition conditions; DI water rinse [266]
223 Zinc oxide (ZnO),
Al-doped (AZO),
sputtered
100 HCl(38%):
HNO
3
(70%):H
2
O
4:1:200
22
◦
C; etch rate higher for unannealed films (350 Å/s); DI water rinse
[267]
224 Zinc oxide (ZnO),
sputtered
16–50 NH
4
F (40%):
HF(49%)
7:1
20
◦
C; BHF etchant (7:1); DI water rinse [264]
225 Zinc oxide (ZnO),
Al-doped (AZO),
sputtered
3.6 TMAH:H
2
O
2.38% TMAH
45
◦
C; TMAH-based developer; Al<1%; DI water rinse [268]
226 Zinc selenide (ZnSe) HCl(38%)
undiluted
Hot; consider methanol-bromine etchant; DI water rinse [269]
227 Zinc sulfide (ZnS),
deposited
HCl(38%):H
2
O 1:4 Room temperature; doesn’t significantly etch Si
3
N
4
; DI water rinse
[270]
228 Zinc sulfide (ZnS) HCl(38%):
HNO
3
(70%) 1:1
25
◦
C; preferential etchant; DI water rinse [168]
229 Zinc telluride (ZnTe) HCl(38%):
HNO
3
(70%) 1:1
25
◦
C; preferential etchant; DI water rinse [168]
230 Zinc telluride (ZnTe) HF(49%):
HNO
3
(70%)4:3
25
◦
C; also etches in concentrated HCl; DI water rinse [70, 168]
231 Zirconium oxide
(ZrO
2
), CVD
HF(49%)
undiluted
Room temperature; HF etchant (49 wt%); also etches in hot
phosphoric acid; DI water rinse [25]