22 Characterization of MEMS/NEMS and BioMEMS/BioNEMS 1291
129. K.F. Man, B.H. Stark, R. Ramesham: A Resource Handbook for MEMS Reliabil-
ity, Rev. A. (JPL Press, Jet Propulsion Laboratory, California Institute of Technology,
Pasadena 1998)
130. S. Kayali, R. Lawton, B.H. Stark: MEMS reliability assurance activities at JPL, EEE
Links 5, 10–13 (1999)
131. S. Arney: Designing for MEMS reliability, MRS Bull. 26, 296–299 (2001)
132. K.F. Man: MEMS Reliability for Space Applications by Elimination of Po-
tential Failure Modes Through Testing and Analysis, http://www.rel.jpl.nasa.gov/
Org//atop/products/Prod-map.html (2001)
133. B. Bhushan, A.V. Kulkarni, W. Bonin, J.T. Wyrobek: Nano/picoindentation measure-
ment using a capacitance transducer system in atomic force microscopy, Philos. Mag.
74, 1117–1128 (1996)
134. S. Sundararajan, B. Bhushan: Development of AFM-based techniques to measure
mechanical properties of nanoscale structures, Sens. Actuators A 101, 338–351 (2002)
135. B. Bhushan, J.N. Israelachvili, U. Landman: Nanotribology: Friction, wear and lubri-
cation at the atomic scale, Nature 374, 607–616 (1995)
136. B. Bhushan, B.K. Gupta: Handbook of Tribology: Materials, Coatings and Surface
Treatments, Reprint edition edn. (Krieger, Malabar 1997)
137. J.F. Shackelford, W. Alexander, J.S. Park (eds.): CRC Material Science and Engineer-
ing Handbook, 2nd edn. (CRC, Boca Raton 1994)
138. J.S. Shor, D. Goldstein, A.D. Kurtz: Characterization of n-type β-SiC as apiezoresistor,
IEEE Trans. Electron. Dev. 40, 1093–1099 (1993)
139. M. Mehregany, C.A. Zorman, N. Rajan, C.H. Wu: Silicon Carbide MEMS for Harsh
Environments, Proc. IEEE 86, 1594–1610 (1998)
140. C.A. Zorman, A.J. Fleischmann, A.S. Dewa, M. Mehregany, C. Jacob, S. Nishino,
P. Pirouz: Epitaxial growth of 3C
−
SiC films on 4 in. diam Si(100) silicon wafers by
atmospheric pressure chemical vapor deposition, J. Appl. Phys. 78, 5136–5138 (1995)
141. C.A. Zorman, S. Roy, C.H. Wu, A.J. Fleischman, M. Mehregany: Characterization
of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor
deposition on polycrystalline silicon, J. Mater. Res. 13, 406–412 (1998)
142. C.H. Wu, S. Stefanescu, H.I. Kuo, C.A. Zorman, M. Mehregany: Fabrication and Test-
ing of Single Crystalline 3C
−
SiC Piezoresistive Pressure Sensors, Technical Digest
– 11th Int. Conf. Solid State Sensors and Actuators – Eurosensors, Vol.XV (Munich
2001) pp.514–517
143. A.A. Yasseen, C.H. Wu, C.A. Zorman, M. Mehregany: Fabrication and testing of sur-
face micromachined polycrystalline sic micromotors, IEEE Electron. Dev. Lett. 21,
164–166 (2000)
144. B.K. Gupta, J. Chevallier, B. Bhushan: Tribology of ion bombarded silicon for mi-
cromechanical applications, ASME J. Tribol. 115, 392–399 (1993)
145. B.K. Gupta, B. Bhushan: Nanoindentation studies of ion implanted silicon, Surf. Coat.
Technol.
68-69,
564–570 (1994)
146.
B.K. Gupta, B. Bhushan, J.Chevallier: Modification of tribological properties of silicon
by boron ion implantation, Tribol. Trans. 37, 601–607 (1994)
147. B. Bhushan, V.N. Koinkar: Tribological studies of silicon for magnetic recording ap-
plications, J. Appl. Phys. 75, 5741–5746 (1994)
148. G.M. Pharr: The Anomalous Behavior of Silicon During Nanoindentation. In: Thin
Films: Stresses and Mechanical Properties III, Vol.239, ed. by W.D. Nix, J.C. Brav-
man, E. Arzt, L.B. Freund (Materials Research Soc., Pittsburgh 1991) pp.301–312
149. D.L. Callahan, J.C. Morris: The extent of phase transformation in silicon hardness
indentation, J. Mater. Res. 7, 1612–1617 (1992)