Ramanathan Sh. (Ed.) Thin Film Metal-Oxides: Fundamentals and Applications in Electronics and Energy
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334 Index
TMR ratio vs. applied magnetic field, 108
X-ray magnetic circular dichroism
(XMCD), 106
Lodestone. See Magnetite (Fe
3
O
4
/
M
Magnetite (Fe
3
O
4
/
half metallicity, 110
inverse Spinel structure, 109–110
magnetoresistance, 111
spin polarization, 110
TMR, 111
Verwey transition, 110
Magnetoresistive random access memory
(MRAM), 97
Magneto-transport, vanadium dioxide
carrier density, 82
dark clover-leaf pattern, 82–83
electron transport properties, 84
Hall effect, 82
magnetoresistance, 82, 85
Mesostructured thin film oxides
fabrication and characteristics
formation mechanism, 260, 261
intrinsic properties, 259
macroscopic morphology, 260
structure-directing species, 261
synthesis and processing techniques,
260
nanocrystalline transition metal oxide
mesoporous frameworks
electronic and optoelectronic
properties, 262
mesostructured nanocrystalline titania
(TiO
2
/ films, 264
physicochemical properties, 262, 263
silica compounds, 261, 262
synthesis and processing parameters,
262, 264
optical, electrical, and electrochemical
applications
excitation spectroscopy, 267
highly crystalline tin-doped indium
oxide framework, 269
lithium insertion/extraction, 268, 269
narrow bandwidth emission, 268
photoluminescence emission, 267, 268
sensitization/energy transfer process,
267–268
trivalent rare earth ion, 266–267
photocatalytic and electrochromic
applications
intrinsic sensitization effect, 272
lauric acid-decomposition, 270
mixed TiO
2
/WO
3
mesostructured
composites, 270–271
mixed titania/CdS and titania/CdSe
framework, 271, 272
nitrogen-doping, 269–270
photolysis/photocurrent generation, 272
precursor compositions and critical
temperatures, 270
titania absorption band edge, 269
wide and narrow band gap
semiconductor nanocrystals, 271
photovoltaic/solar cell applications,
273–274
sol–gel cooperative assembly chemistry
high-resolution electron microscopy
images, 258, 259
non-silica metal oxides, 259
organic/inorganic nano-domain
separation, 258
periodic nanodomain-organization
mechanism, 257–258
SBA-6 material, 258, 259
three-dimensional composite
architecture, 257
titania mesoporous thin film assembly and
nanocrystallization
amorphous titania phase, 265, 266
controlled heat treatment, 264–265
highly crystalline mesoporous
structures, 266, 267
nanocrystal concentration limitation,
265
photocatalytic activity, 264
solar energy conversion and
photocatalysis, 266
structure-directing surfactant species,
264
transmission electron micrographs, 265
Metal–insulator interfaces, 220
Metal-insulator-metal (MIM), 132
Metalorganic chemical vapor deposition
(MOCVD)
PbZr
x
Ti
1x
O
3
equilibrium phase diagram, PbTiO
3
(001), 26
homoepitaxial growth oscillations,
PbTiO
3
,25
lattice pulling, 26
Index 335
surface composition, 26, 27
surface in-plane lattice parameter, 26,
27
YBa
2
Cu
3
O
7•
(YBCO), 236, 248
Monkhorst–Pack sampling scheme, 307
MoO
3
monolayers, Au(111)
bilayer, atomic structure, 283
bond lengths, 287
charge-density, 289, 290
cohesive energy, 289
CVD and PVD, 284
density of states (DOS), 288, 289
geometry optimizations, 284–285
herringbone pattern, 290
phonon frequencies, 288
slabs, atomic structure, 286
Mulliken charge analysis, 310
Multiferroicity, 123
Multiferroic oxide thin films
BiFeO
3
antiferromagnetic sublattice canting,
118, 119
antiferromagnetism reorientation, 119,
120
critical temperatures, 117
crystal structure, 118
hysteresis loops and spin valve
structure, 121
voltage controlled exchange bias, 120
multiferroic composites
BaTiO
3
, 123, 124
electrically assisted magnetic writing,
123
spinel/CoFe
2
O
4
, 123, 124
three microstructures, 123
N
Nanocrystalline transition metal oxide
mesoporous frameworks
electronic and optoelectronic properties,
262
physicochemical properties, 262, 263
silica compounds, 261, 262
synthesis and processing parameters, 262,
264
titania (TiO
2
/ films, 264
n-type semiconductor, 158
O
Optical properties, vanadium dioxide
conductance, 81–82
electrical resistance plot, 78, 79
infrared reflectance, 80, 81
P
Perovskites
cation displacements, 3, 4
four depictions, 3
pseudocubic lattice parameters, 4
tolerance factor, 3
Phase change RAM (PCRAM), 132, 163
Photoemission spectroscopy (PES), 178
Plank’s constant, 176
Point contact Andreev reflection (PCAR), 98
Poisson’s equation, 174
Polycrystalline superconductor, 234
Pr
x
Ca
1x
MnO
3
(PCMO), 139
PtAg
x
catalyst, 305
P-type semiconductor, 158
Pulsed laser deposition (PLD), 170–171, 245
La
1x
Sr
x
MnO
3
, 21–23
SrTiO
3
, 20–21
R
Reflection high-energy electron diffraction
(RHEED), 170–171, 242
Region-regular poly-3-hexylthiophene (RR
P3HT), 273–274
Resistance change Random Access Memory
(RRAM), 131
1Resistor-1transistor (1R1T), 161
Richardson constant, 176
RMS roughness, 7, 8, 16, 19
R
off
/R
on
ratio, 136
S
Sabatier correlation, 316
Schottky barrier height (SBH)
bond polarization theory, 175
characterization, 178–179
La
1x
Sr
x
MO
3
/Nb:SrTiO
3
junction, 187,
188
termination control
charge sheet density, 190, 191
electrostatic potential, 190
Fermi level pinning, 188
interface termination, 187, 189, 190
I–V, C–V, and IPE characteristics, 188,
189
relative permittivity, 190
SrMnO
3
coverage, 187, 188
Thomas–Fermi screening length, 190
Self-assembled nanostructures
angular dependence, 247
hybrid NdBCO film, 248–249
inverse anisotropy, 248
336 Index
log–log plot, 247
RBCO films, 248
splayed defect microstructure, 247
STEM images, 246
strain field, 245
TEM images, 246, 248, 249
Slab model
calculations, 307–308
electronic structure
d-band centroid, 319, 320
density of states, 318–319
Fermi level, 319–320
Hammer–N¨orskov model, 319
temperature-dependant optimal
adsorption strength, 320
oxygen adsorption
antibonding states, 322
M–O bond, 320
O–M bond, 321
O–O bond, 320–321
peroxo-configuration, 320, 321
Pt monolayer, 317
Solid oxide fuel cells (SOFCs), 304, 305
Space-charge limited current (SCLC), 145
Spintronics devices, 95, 96, 99, 100, 102, 111,
112, 122, 124, 125
SrTiO
3
(001)
intensity ratio, 17
internal structure, non-cubic films, 34–44
RMS roughness, 16
TiO
2
-terminated structure, 28, 29
Structural phase transition (SPT), 70, 82, 86
Surface morphology, 18
T
Thermo-chemical memory (TCM), 160
Thin film vanadium dioxide
crystal structure
monoclinic lattice, 57, 58
rutile lattice, 57
XRD spectrum, 58–59
devices
cross-bar memory structure, 88, 89
current vs.temperature, 85–86
current vs.voltage, 88, 89
free carrier density, 85
switching time, 87
electron transport and material morphology
relative resistance ratio vs.UV exposure
time, 67–68
resistance vs. temperature, 59–61, 63,
66–67
thermal hysteresis curves, 62, 64, 65
energy band structure
CDMFT, 76, 78
dipole selection rules, 73
metal-insulator transition strength,
74–75
near-Fermi level, 71, 72
peak height ratio, 75
PES intensity, 76–78
spectral weight redistribution, 75
X-ray absorption spectroscopy (XAS)
data, 72, 73
insulating state nature
CDMFT, 70
Mott transition model, 68
orbital-assisted Mott–Peierls transition,
69
Peierls model, 68
magneto-transport
carrier density, 82
dark clover-leaf pattern, 82–83
electron transport properties, 84
Hall effect, 82
magnetoresistance, 82, 85
material synthesis
film deposition, 53–55
film microstructure, 53
resistance curves, 55, 56
optical properties
conductance, 81–82
electrical resistance plot, 78, 79
infrared reflectance, 80, 81
Time-dependent dielectric breakdown
(TDDB), 139
Titania mesoporous thin film assembly and
nanocrystallization
amorphous titania phase, 265, 266
controlled heat treatment, 264–265
highly crystalline mesoporous structures,
266, 267
nanocrystal concentration limitation, 265
photocatalytic activity, 264
solar energy conversion and photocatalysis,
266
structure-directing surfactant species, 264
transmission electron micrographs, 265
Transition metal oxides (TMO)
binary transition metal oxides
I–V curve, 155
Oxygen ion migration, 154–155
redox reaction process, 155–156
TiO2 thin films, 152–153
complex perovskites
I–V characteristics, 141–142
PCMO films, 144
Index 337
Schottky barrier, 143
Sm metal film, 141
SrTiO3 films, 144
switching effect, 142–143
filamentary switching, 145–146
filament fine structure analysis, 147–148
C-AFM work, 149–150
HRTEM analysis, 151
I–V curves, 149–150
Nb-doped SrTiO3 film, 151–152
SrTiO3, 148–149
oxide dual layer memory element
Pt electrodes, 138
tunnel oxide, 139
Tunneling magneto-resistance (TMR), 97, 98,
111
U
Ultrathin titania films, Au catalysts
Au–Ti bonding, 297
charge density and DOS, 295, 296
dynamic interface fluxionality, 292
model choice, 293
O adsorption, 292, 297, 298
O
2
adsorption, 292, 294, 295
strong metal support interaction, 291
two salient features, 292
V
Valence change memories (VCM), 132
Verwey transition, 110
X
X-ray absorption near edge spectroscopy
(XANES), 145
X-ray diffraction (XRD), 305, 309
X-ray fluorescence (XRF), 145
X-ray photoemission spectroscopy (XPS), 309