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798 E. H. Watanabe et al.
based on the use of the thyristor, as well as on self-commutated
(controllable turn-on and turn-off) semiconductor devices like
gate turn-off thyristors (GTOs), insulated gate bipolar transis-
tors (IGBTs), and integrated gate controlled thyristors (IGCTs)
[4, 5], which were not developed at that time yet.
The switching characteristics of thyristors – controlled
turn-on and natural turn-off – are appropriate for using
in line-commutated converters, like in conventional HVDC
transmission systems with a current source in the DC side.
In this latter application, the technology for series connection
of thyristors is very important due to the high-voltage char-
acteristics of the transmission voltage. This is a well-known
technology. Maximum breakdown voltage and current con-
duction capabilities are around 8 kV and 4 kA, respectively.
These are some features that make thyristors important for
very high-power applications, although they also present some
serious drawbacks: the lack of controlled turn-off capability
and low switching speeds.
Self-commutated switches are adequate for use in converters
where turn-off capability is necessary. The device with high-
est ratings in this group was, for a long time, the GTO, with
maximum switching capability of 6 kV and 6 kA. At present,
there are IGBTs with ratings in the range of 6.5 kV and 3 kA
and IGCTs with switching capability of about 6 kV and 4 kA.
Other semiconductors switches – like the injection enhanced
gate transistor (IEGT), faster than IGBTs and with high ratings
– can be also found in the market. The GTOs and IGCTs are
devices that need turn-on current rate of change (di/dt) lim-
itation, normally achieved with a small inductor. Normally,
GTOs also need a snubber circuit for voltage rate of change
(dv/dt) limitation.
The GTOs, IGCTs, and IGBTs are the most used options for
self-commutated high-power converters. Because the switch-
ing time of these devices is in the microsecond range (or
below), their series connection is more complicated than in the
case of thyristors. However, there are examples of series con-
nections of various GTOs or IGCTs and, in the case of IGBTs,
the number of series connected devices can go as high as 32 [6].
Because of the commutation nature of the thyristors, the
converters used in HVDC systems are of the current source
I
SM
Ideal
Shunt
Compensator
M
j ΧL/2 j ΧL/2
V
S
V
R
I
MR
V
M
I
M
FIGURE 31.1 Ideal shunt compensator connected in the middle of a transmission line.
type [7]. On the other hand, the force commutated converters
using the self-commutated devices are basically of the voltage
source type. More details about current source and voltage
source converters can be found in many power electronics
text books, e.g. [3, 7].
31.2 Ideal Shunt Compensator
A simple and lossless AC system is composed of two ideal gen-
erators and a short transmission line, as shown in Fig. 31.1,
is considered as basis to the discussion of the operating prin-
ciples of a shunt compensator [8]. The transmission line is
modeled by an inductive reactance X
L
. In the circuit, a con-
tinuously controlled voltage source is connected in the middle
of the transmission line. It is assumed that the voltage phasors
V
S
and V
R
have the same magnitude and are phase-shifted
by δ. The subscript “S” stands for “Source” and “R” stands
for “Receptor.” Figure 31.2 shows the phasor diagram of the
system in Fig. 31.1, for the case in which the compensation
voltage phasor V
M
has also the same magnitude as V
S
and V
R
and its phase is exactly (−δ/2) with respect to V
S
and (+δ/2)
with respect to V
R
.
In this situation, the current I
SM
flows from the source
and the current I
MR
flows into the receptor. The phasor I
M
is the resulting current flowing through the ideal shunt com-
pensator, figure shows that this current I
M
, in this case, is
orthogonal to the voltage V
M
, which means that the ideal
shunt compensator voltage source does not have to gener-
ate or absorb active power and have only reactive power in its
terminals.
From Fig. 31.2 and knowing that no active power flows to
or from the ideal shunt compensator, it is possible to calculate
the power transferred from V
S
to V
R
which is given by:
P
S
=
2V
2
X
L
sin(δ/2) (31.1)
where, P
S
is the active power flowing from the source, V is the
magnitude of the voltages V
S
and V
R
.