January 26, 2004 16:26 WSPC/Book Trim Size for 9in x 6in b ook2
176 Quantum Theory of the Optical and Electronic Properties of Semiconductors
E
n
= −E
0
1
(n +1/2)
2
with n =0, 1,... , (10.65)
2D exciton bound-state energies
where we identify E
0
, Eq. (10.41), as the exciton Rydberg energy and a
0
,
Eq. (10.39), as the exciton Bohr radius which we used already in earlier
chapters as a characteristic length scale.
The binding energy of the exciton ground state is E
0
in 3D and 4E
0
in 2D, respectively. The larger binding energy in 2D can be understood
by considering quantum well structures with decreasing width. The wave
function tries to conserve its spherical symmetry as much as possible since
the admixture of p-wave functions is energetically unfavorable. Confine-
ment parallel to the quantum wells is therefore accompanied by a decrease
in the Bohr radius perpendicular to the wells. In fact, the exciton radius is
obtained from the exponential term
e
−ρ/2
= e
−αr/2
with α =2/a
0
n in 3D and α =2/a
0
(n +1/2) in 2D. In the ground state,
the 3D exciton radius is thus simply the exciton Bohr radius a
0
, but it is
only a
0
/2 in 2D.
InSb
GaSb
GaAs
CdSe
ZnTe
CdS
CuCl
TlCl
1234
1000
100
10
1
0.1
0
(meV)
0
(eV)
g
E
E
Fig. 10.1 Experimental values for the exciton binding energy E
0
versus band gap energy
E
g
.