
Numerical Experiments 173
The temperature θ is assumed to be continuous throughout the entire do-
main
Ω. The continuity of the normal component of the heat flux on the
interface between different materials m
1
and m
2
, m
1
= m
2
, yields the follow-
ing interface conditions, coupled with the heat equations (6.94):
K
m
1
(θ) ∇θ
Ω
m
1
·n
m
1
=
K
m
2
(θ) ∇θ
Ω
m
2
·n
m
1
, on Ω
m
1
∩ Ω
m
2
, (6.96)
where denotes restriction, and n
m
1
denotes the unit normal vector pointing
from material m
1
to material m
2
.
We consider two types of outer boundary conditions, namely Dirichlet and
Robin conditions. To that end, we decompose ∂Ω according to
• Let Γ
Dir
and Γ
Rob
be relatively open polyhedral subsets of ∂Ω, such
that ∂Ω=
Γ
Dir
∪ Γ
Rob
,Γ
Dir
∩ Γ
Rob
= ∅.
The boundary conditions are then given as
θ = θ
Dir
, on Γ
Dir
, (6.97a)
−
K
m
(θ) ∇θ
· n
m
= ξ
m
(θ − θ
ext,m
),
on Γ
Rob
∩ ∂Ω
m
, m ∈ M, (6.97b)
where n
m
is the outer unit normal to Ω
m
, θ
Dir
≥ 0 is the given temperature
on Γ
Dir
, θ
ext,m
≥ 0 is the given external temperature ambient to Γ
Rob
∩∂Ω
m
,
and ξ
m
> 0 is a transition coefficient.
Our apparatus is given in Figure 6.19.
The radius is 12 cm and the height is 45.3 cm. This domain represents a
growth apparatus used in silicon carbide single crystal growth by the PVT
method. The domain Ω consists of six subdomains Ω
m
, m ∈{1,...,6},
representing the insulation materials, graphite crucible, SiC crystal seed, gas
enclosure, SiC powder source, and quartz. In order to use realistic functions
for the isotropic parts κ
m
iso
(θ) of the thermal conductivity tensors (cf. (6.95)),
for gas enclosure, graphite crucible, insulation, and SiC crystal seed, we use
the functions given by (A.1), (A.3b), (A.4b), and (A.7b) in [139]; for κ
5
iso
(θ)
(SiC powder source), we use [137, (A.1)], and for κ
6
iso
(θ) (quartz), we use
κ
6
iso
(θ)=
1.82 − 1.21 · 10
−3
θ
K
+1.75 · 10
−6
θ
2
K
2
W
mK
. (6.98)
Hence, all functions κ
m
iso
(θ) depend nonlinearly on θ. As mentioned in the in-
troduction, the thermal conductivity in the insulation is typically anisotropic
in PVT growth apparatus. In the numerical experiments reported below,
we therefore vary the anisotropy coefficients (α
1
r
,α
1
z
) of the insulation while
keeping (α
m
r
,α
m
z
)=(1, 1) for all other materials m ∈{2,...,5}.
Heat sources f
m
= 0 are supposed to be present only in the part of Ω
2
(graphite crucible) labeled “uniform heat sources” in the left-hand picture in
Figure 6.20, satisfying 5.4cm≤ r ≤ 6.6cmand9.3cm≤ z ≤ 42.0cm.
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