442 A.I. Larkin and A.A.Varlamov
than T, the expression in parenthesis in (10.259) acts
as a delta-function and the zero-bias anomaly in the
tunnel conductivity strictly reproduces the anomaly
of the density of states around the Fermi level:
ıG(V)
G
n
(0)
=
ı(eV)
(0)
, (10.260)
where G(V) is the differential tunnel conductance
and G
n
(0) is the background value of the Ohmic con-
ductance supposed to be bias-independent, ıG(V )=
G(V )−G
n
(0). This situation, for instance, occurs
in a junction with one amorphous electrode [182],
where the dynamically screened Coulomb interac-
tion is strongly retarded, which leads to a consider-
able suppression of the density of states in the vicin-
ity of the Fermi level, within
−1
T.
It is worth stressing that the proportionality be-
tween the tunneling current and the electron DOS
oftheelectrodesiswidelyacceptedasanaxiom,
but generally speaking this is not always so. As one
can see from the previous subsection, the opposite
situation occurs in the case of the DOS renormal-
ization due to the electron–electron interaction in
the Cooper channel: in this case the DOS correc-
tion varies strongly already in the scale of E
0
∼
E
ker
T and the convolution in (10.259) with the
DOS (10.255) has to be carried out without the sim-
plifying approximations assumed to obtain (10.260).
We will show that the fluctuation induced pseudo-
gap like structure in the tunnel conductance differs
drastically from the anomaly of the density of states
(10.255), both in its temperature singularity near T
c
and in the energy range of its manifestation.
Let us first discuss the effect of the fluctuation
suppression of the density of states on the properties
of a tunnel junction between a normal metal and a
superconductor above T
c
. The effect under discus-
sion turns out to be most pronounced in the case
of thin superconducting films (d (T)) and lay-
ered superconductors like HTS cuprates. In order to
derive the explicit expression for the fluctuationcon-
tribution to the differential conductance of a tunnel
junction with one thin film electrode close to its T
c
we differentiate (10.259) with respect to voltage, and
substitute the DOS correctiongiven by (10.255).This
results in (see [178]):
ıG
fl
(V, )
G
n
(0)
=
1
2T
∞
−∞
dE
cosh
2
E+eV
2T
ı
(2)
(E, ) (10.261)
∼ Gi
(2)
ln
2
√
+
√
+ r
Re
1
2
−
ieV
2T
.
It isimportantto emphasizeseveral nontrivialfea-
tures of the result obtained. First, the sharp decrease
(
−2(1)
)ofthedensityofelectronstatesintheimme-
diate vicinity of the Fermi level generated by fluc-
tuations surprisingly results in a much more mod-
erate growth of the tunnel resistance at zero volt-
age (ln 1/). Second, in spite of the manifestation of
the DOS renormalization at the characteristic scales
E
(d)
0
∼ T −T
c
orE
(cl)
0
∼
√
T
c
(T − T
c
),theenergy scale
of the anomaly developed in the I − V characteristic
is much larger: eV = T E
0
(see Fig. 10.17).
In the inset of Fig. 10.17 the result of measure-
ments of the differential resistance of the tunnel
junction Al-I-Sn at temperatures slightly above the
critical temperature of the Sn electrode is presented.
This experiment was done [183] with the purpose
of checking the theory proposed [178]. The nonlin-
ear differential resistance was precisely measured at
low voltages, which permitted the observation of the
fine structure of the zero-bias anomaly. The reader
can compare the shape of the measured fluctuation
part of the differential resistance (inset in Fig. 10.17)
with the theoretical prediction. It is worth mention-
ing that the experimentally measured positions of
the minimaareeV ≈±3T
c
,while thetheoretical pre-
diction following from (10.262) is eV = ±T
c
.Re-
cently similar results on an aluminium film with two
regions of different superconductingtransition tem-
peratures were reported [184]. The observations of
the pseudogap anomalies in tunneling experiments
at temperatures above T
c
obtained by a variety of ex-
perimental techniques were reported in [185–189].
We will now consider the case of a symmetric
junction between two superconducting electrodes at
temperatures above T
c
. In this case, evidently, the
correction (10.262) has to be multiplied by a factor
of“two”becauseofthe possibility offluctuation pair-
ing in both electrodes. Furthermore, in view of the
extraordinarily weak (∼ ln 1/) temperature depen-
dence of the first order correction,different types of