bonding and bond angles
(cont.)
in metals 190–3, 196–200,
218–222
in semiconductors 227–242
and s-p hybridization
227–229, 257–258(p),
328–330(a)
bond counting 5–15
in crystals 8–9, 10, 33–34(p)
in nucleation models 145,
155–156
in polar semiconductors
235, 258(p)
in TLK model 5–7, 6, 7,
33–34(p)
bond orientational order
124–125
boron nitride, pyrolytic 56
Brillouin zone 31–32, 31, 232
capture numbers 151–155, 155,
182(p)
catalysis 52–54, 128, 135–141
on d-band metals 143(p)
industry 52–54, 135
small metal particle (SMP)
52–54, 135–137, 136,
137
spatio-temporal reactions
139–141, 140
see also chemisorption
cell model, for adsorbed layers
113–114, 126, 126
quantum 114, 114, 126
chemical synthesis and
materials development
289–295
chemical vapor deposition
(CVD) 52, 59–60,
252–256, 289–291, 300
and gas purity 52, 59
modeling of, 252–256, 300
and precursor molecules
289–291, 290
thin film production
methods 59–60, 59
chemisorption 108–109, 114,
118, 128–141
and catalysis 135–141
on d-band metals 143(p)
Newns–Anderson model
130–132, 131, 143(p)
oxidation reactions 133–134,
137–141, 138, 140
and painters 134
precursor stage of 108
cleave, cleavage 3, 49, 236
cluster density, size see
nucleation and growth
coalescence 151–152, 153, 154,
157, 158, 179
cohesion, cohesive energy,
function see bonding,
sublimation energy
compressibility, isothermal
115–116, 117
computer codes and
simulations 150, 156–157,
193, 236, 313(w),
327–328(a)
see also effective medium
theory, molecular
dynamics, Monte Carlo
condensation
coefficient, 181–182(p)
regimes 152–155, 155
conductance, conductivity
of semiconductors 280–281,
283–284
of thin (metal) films
280–287
of vacuum pipes 41–42, 41,
44–45, 318(a)
configurational entropy 34(p),
109–110, 130, 258–259(a)
conversion factors 309–311(a)
Coulomb blockade 284, 293
critical cluster, or nucleus, size
148–157, 155
critical phenomena, points and
exponents 115, 129–130,
211–212
crystal surfaces and interfaces,
introduction 5–17
melting transition 15
rough surfaces, roughening
transition 7, 15, 16,17
simple models of 5–9, 6, 7
singular, smooth 7–9,17
see also reconstruction, solid
on solid model, vicinal
surface
crystal growth (kinetics)
15–19, 54–60, 144–181,
245–256
versus adsorption 118–119,
145–147, 146, 147
and dislocations 15, 17, 18,
19, 147, 246–251, 251,
268–269, 269
from the liquid 17–18
repeatable step in 6
of semiconductors 245–256,
246, 251, 254, 255
at steps, and the
condensation coefficient
35(p), 174–179, 175, 177,
181–182(p)
supersaturation for 15–19,
17, 18, 19, 34(p), 247–252
see also chemical vapor
deposition, epitaxial
growth, molecular beam
epitaxy, nucleation and
growth, thin film
deposition procedures
crystallographic notation 8–9,
312–313(w)
cubic anisotropy 212
delta-doped layers 265–266,
266, 278
demagnetizing energy, field
212
density functional theory
(DFT) 184–199, 275,
326–327(a)
of chemisorption 133, 170
effective medium theory
(EMT) 133–134, 165–166,
170–171, 191–193, 192
embedded atom methods
(EAM) 133, 191
jellium model 184–190, 185,
187–188, 195–196, 198,
224–225(p)
local density approximation
(LDA) 186, 231,
326–327(a)
denuded zones, at steps 163,
174–176, 177, 182–183(p),
246, 247–248
depletion layer or region 260,
263–265, 265
desorption, and adsorption 16,
34–35(p), 118–119
and bakeout procedures
40
364 Index