66 1 Thermodynamics of Grain Boundaries
The situation is quite different in systems with a narrow solubility range.
Here the heat of adsorption is high (∼0.7–0.9 eV), and thus the surface solu-
tion ceases to be dilute even if the amount of impurities in the system is so
small that the bulk solution still can be considered as fully dilute. The values
of the heat of mixing in the surface layer, on the other hand, are small for all
reasonable values of the parameter z,evensmallerthaninsystemswithan
unlimited solubility in the solid (less than 0.1 eV).
1.3.4 Adsorption of Vacancies at Grain Boundaries
A crystal of a pure material is a single component system, by definition. On
the other hand, even in the ultra-pure material there is a defect, which may be
considered as an impurity. The case at hand is the vacancies. Usually, the con-
centration of vacancies in the crystal is rather small (even at the melting point
c
eq
v
∼ 10
−4
where c
eq
v
is the equilibrium concentration of vacancies). However,
due to the adsorption, at grain boundaries the vacancy concentration and the
associated thermodynamical effects can be much higher. The salient feature
of vacancies as impurities should be taken into account. Contrary to ordinary
impurity atoms, the number N
v
of vacancies is determined by the minimum of
the free energy G of the crystal. So, for vacancies ∂G/∂N
v
=0atT,p =const.
Since (∂G/∂N
v
)
T,p
= μ
v
,whereμ
v
is the chemical potential of the vacancies,
the chemical potential of the vacancies in the equilibrium is zero. For dilute
solutions μ
v
= μ
0v
+kTln c
v
,sinceμ
v
(T,c
eq
v
)=0;μ
0v
= −kT ln c
eq
v
and
μ
v
=kTlnc
v
/ (c
eq
v
).
So, in accordance with Eq. (1.50), the adsorption of equilibrium vacancies
does not change the thermodynamic properties of the grain boundary. The
situation changes if the concentration of vacancies in the crystal deviates from
equilibrium. Such a possibility has been discussed often in the literature. Ac-
tually, inasmuch as the formation and disappearance of vacancies do not occur
at regular lattice points, but require diffusion from sources or to sinks, a non-
equilibrium concentration of vacancies can be kept for a long time [96]. The
redistribution of vacancies over short distances proceeds much faster. That
is why a crystal can be obtained where a partial equilibrium between grain
boundaries or interphases has been established whereas the concentration of
vacancies in the crystal is not in equilibrium. Such a situation — high concen-
tration of excess vacancies, regarding the equilibrium concentration of course,
and their adsorption at the grain boundary — was considered in [96]. The re-
sult of such an adsorption can be a decrease of the grain boundary (generally,
interface) surface tension, which is essential for recrystallization, formation
of a new phase and so on. The relation between surface tension and vacancy
concentration is determined by the Gibbs adsorption equation, on the one
hand, and by one of the considered adsorption isotherms, on the other hand.
Of course in the case of vacancy adsorption at an internal interface each ad-
sorption site can be occupied by not more than one particle (vacancy). As a
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