3.5 Experimental Results 231
3.5.4 Correlation of Grain Boundary Migration and
Diffusion
While we pointed out in Sec. 3.1 that grain boundary migration is not to be
confused with diffusion across the boundary, it is interesting to compare the
misorientation dependence of grain boundary diffusion with the misorientation
dependence of grain boundary mobility. For this purpose the data for grain
boundary diffusion of zinc in 100 and 111 tilt boundaries in aluminum can
be utilized [280]–[282]. Fig. 3.59 shows the misorientation dependence of the
migration activation enthalpy for 111 tilt boundaries in Al and the activation
enthalpy for zinc diffusion along 111 tilt grain boundaries in aluminum. The
migration activation enthalpy of both migration (H
m
) and boundary diffusion
(H
DG
) depend upon the misorientation in a non-monotonous manner; maxima
on the diffusion activation enthalpy curve strictly correspond to minima on
the migration activation enthalpy curve, and vice versa. In both cases extrema
are observed at angles which correspond to special (CSL) boundaries. Appar-
ently, the misorientation dependence of boundary diffusion is complementary
to the misorientation dependence of boundary migration. Of course, it has to
be kept in mind that the measured diffusion data [280] reflect the diffusion
along grain boundaries, while migration is at most akin to diffusion across the
boundary. Also, boundary migration is more related to self-diffusion, whereas
impurity (zinc) diffusion was measured experimentally [280, 282]. Unfortu-
nately, there are no methods to measure the diffusion across grain boundaries.
In a high-accuracy study [283] the grain boundary diffusion of
195
Au and grain
boundary self-diffusion of
64
Cu along symmetrical 001 tilt boundaries with
misorientation close to Σ5 (36.9
◦
) were measured under identical experimental
conditions as a function of temperature and tilt angle (Fig. 3.60). The param-
eter π = SδD
b
(segregation factor S = 1 for grain boundary self-diffusion,
2 ≤ S ≤ 6 for Au in Cu; grain boundary width δ=0.5nm; D
b
grain boundary
diffusion coefficient) manifests the same characteristic orientation dependence
for both grain boundary self-diffusion and grain boundary impurity diffusion
of Au in Cu. A qualitatively similar orientation dependence was observed in
both cases. Furthermore, this orientation dependence was independent of the
purity of the Cu material used (Fig. 3.60a). High purity Cu bicrystals of two
different original Cu materials (Cu1 and Cu2) were grown. The total impurity
amount in both types of Cu was small and comparable, although different.
Clearly segregation effects cannot account for the observed variations of the
parameter π.
The activation enthalpy and pre-exponential factor of grain boundary mi-
gration do not correspond to the relevant parameters for diffusion, however.
As evident from Figs. 3.52, 3.59, and 3.60, the activation enthalpy of grain
boundary migration for the majority of grain boundaries investigated is much
larger than that of grain boundary diffusion, frequently even larger than that
of bulk diffusion. The calculated values of the pre-exponential factor of grain
boundary mobility, based on the grain boundary diffusion data, are presented
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