50
datasheet; however it may require some interpolation between values in graphs to
determine the appropriate value for the specific application, such as estimated junction
temperature.
•
Total power loss in the FWD (P
losstot
)
The total power dissipation can be calculated as in equation 3.2.2.2 [13]:
satoffonlosstot
PPPP +
= (3.2.2.2)
3.3. Lowest loss estimation of IGBT and FWD
In appendix D it can be found a MOSFET in comparison with various IGBT with almost
the same voltages and currents and as predicted the power loss in the MOSFET is greatly
exceeding any IGBT regardless of model. This is easily explained by the high voltage
ratings.
On the other hand, in other applications in example as an inverter with a DC-bus supplied
from a regular car battery (12V) which is consuming 50A an off-the-shelf IGBT with
V
CEsat
= 2.5V has the efficiency of 79%. An of-the-shelf MOSFET with R
DS(on)
= 0.007 Ω
has an efficiency of 97% and if we add switching losses the benefit of the MOSFET is
increased further more. The conclusion looks like choosing the IGBT with the lowest
power losses are the best choice without a doubt but there are other concerns as well.
By viewing the chart of suitable transistors/diodes again and removing all those which
may have a problem with either too high peak currents or too high peak voltages
11
a few
good transistor solutions remain, in this case with respect to power loss per IGBT with
FWD. Calculations are done using the equation 55 and 57 with the parameters cosφ=1,
I
0
=15 A and the model specific parameters can be found in appendix D where all the
parameters have been normalized to fit the actual values. The switching frequency is
assumed to be 10kHz giving it a m
f
= 15.
Manufacturer Model P
LOSSTOT
12
Technology
CSJC
RR
θθ
+
IRF IRG4PSH71UD 26,3W SI IGBT, SI FWD 0.36+0.24
IRF/CREE IRGPSH71U/
C2D05120
22,8W SI IGBT, 2 x SiC FWD 0.36+0.24,1.1+0.24
CREE 2 x CID100512 40W 2 x SI IGBT, 2 x SiC FWD 1.15+0.24
Table 11 : Suitable discrete IGBTs
Although even if the discrete transistors CO-packed with free-wheeling-diodes above
seems to outperform the modules below in respect to loss the cabling has to be considered
since it will contribute with some capacitance and possibly some inductance. In some
cases the effects of this is large enough to be ineligible in favor of the big modules.
The discrete transistors also have the possibility to be mounted on a separate heatsink or
to displace the dissipated heat over a larger area making cooling easier in some
11
The rated voltage and current should be at least twice the nominal to handle overshoots [7].
12
Conduction loss and switching loss for one IGBT with FWD