Wiley - 2015, - 260 p. ISBN 978-1-118-92152-4
Книга посвящена вопросам моделирования и применения
гетероструктурных биполярных транзисторов (SiGe HBT) при построении
твердотельных интегральных схем (на англ. языке)
Contents
Introduction
Basic Concept of Microwave Device Modeling
Modeling and Parameter Extraction Methods of Bipolar Junction Transistor
Small-Signal Modeling and Parameter Extraction of HBT
Large-Signal Equivalent Circuit Modeling of HBT
Microwave Noise Modeling and Parameter Extraction Technique for HBTs
SiGe HBT Modeling and Parameter Extraction
Contents
Introduction
Basic Concept of Microwave Device Modeling
Modeling and Parameter Extraction Methods of Bipolar Junction Transistor
Small-Signal Modeling and Parameter Extraction of HBT
Large-Signal Equivalent Circuit Modeling of HBT
Microwave Noise Modeling and Parameter Extraction Technique for HBTs
SiGe HBT Modeling and Parameter Extraction