Издательство: World Scientific.
Количество страниц:1014Electrons, bonds, bands and holes.
Homogeneous semicondutor at equilibrium.
Drift, diffusion, generation, recombination, trapping and tunneling.
Metal-oxide-semiconductor capacitor (MOSC).
P/n and other junction diodes.
Metal-oxide-semiconductor and other field-effect transistors.
Bipolar junction transistor and other bipolar transistor devices.
Количество страниц:1014Electrons, bonds, bands and holes.
Homogeneous semicondutor at equilibrium.
Drift, diffusion, generation, recombination, trapping and tunneling.
Metal-oxide-semiconductor capacitor (MOSC).
P/n and other junction diodes.
Metal-oxide-semiconductor and other field-effect transistors.
Bipolar junction transistor and other bipolar transistor devices.