Article. Published in Russian Microelectronics. – 2010, Vol 39, - №
06, – p. 401-404
Original Russian Text © M.K. Bakhadyrkhanov, K.S. Ayupov, G.Kh. Mavlyanov, Kh.M. Iliev, S.B. Isamov, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 6, pp. 426–429
Бахадырханов М.К., Аюпов К.С., Мавлянов Г.Х., Илиев Х.М., Исамов С.Б. Фотопроводимость кремния с нанокластерами атомов марганца // Микроэлектроника, 2010, Т 39, В 6, С 426-429
In this work, specific features of photoconductivity of silicon with multicharge nanoclusters of manganese atoms are investigated. It is shown that for such samples, anomalously high impurity photoconductivity is observed in the spectral region λ = 1.8–3 μm. It is also shown that such samples possess giant residual photoconductivity.
Original Russian Text © M.K. Bakhadyrkhanov, K.S. Ayupov, G.Kh. Mavlyanov, Kh.M. Iliev, S.B. Isamov, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 6, pp. 426–429
Бахадырханов М.К., Аюпов К.С., Мавлянов Г.Х., Илиев Х.М., Исамов С.Б. Фотопроводимость кремния с нанокластерами атомов марганца // Микроэлектроника, 2010, Т 39, В 6, С 426-429
In this work, specific features of photoconductivity of silicon with multicharge nanoclusters of manganese atoms are investigated. It is shown that for such samples, anomalously high impurity photoconductivity is observed in the spectral region λ = 1.8–3 μm. It is also shown that such samples possess giant residual photoconductivity.