99
'
!U
H. ,':iUtLic Converter
as
a Power
Actuator
for
DC
Dríves
fi
11101('
n~cent
development
are
Gate-Turn-Off thyristors
(GTO),
where
1',:11,,'
'''Idrolled
electronic blocking is also possible, Fig.8.1
Cj
they
are
mainly
Il
ro
, -c!
III
rorcc-commutated converter circuits with a DC link, to be discussed
III
( :lld,
P:
;.
~).2
and
11.
Other
types of electronic switches which are of
interest
',,1
::,,,,ci;d applications are reverse conducting thyristors or voltage controlled
1.1
1I.
1I
:IIK
l.ors
with internal diodes, where
the
two forward
states
are
combined
IV
iI
,
11
I('V
" ['sc conductionj
an
example is
the
"lnsulated
gate
bipolar transis-
1.,
'I"
(I ( : I
~T),
seen in Fig. 8.1 dj there
are
also applications for
symmetrical
11
11'
1
1."1
il'
S,
l"ig. 8.1
e,
as
wiU
be
shown in Chapo 11.4.
forward
conducting
conducting
conducting
!./
",
electranic
/
'"
electronic
, \ control
\ control
u
IUverse
rückwarts
I forward u
reverse
blocking
~
Iilucking
sperrend blocking
blocking
b)
!ig
c)
,I)
",
.
!ig
I
u
o ! f>r o
o •
f>(
o
Oiode
-u
-u
Control/ed rectifier
Gate tum·of( Thyristor
Thyristor
(GTO)
conducting
, conducting
/
~
.
electronic
~
"
electronic
\ control
, \ contraI
blocking
:. .
...
.'. .
..
.
JI ,
VO
/
!J
t l
forWârdU
blocking u
blocking electronic \
control"-..,
conducting
" " '/Iludiu!}
e)
"J
u
-1
\f.
1
LfJt
U
g2
L
i
--.J
\.
/
~
u
~
Insulaled gale
u
bipolar Transistor
(IGBT)
Symmetrical switch
(IGBT)
...
l,~
.
H.
I. I) II
COII
trolleel
anel
controlJed electronic switdlC::;
III
I.he
pax(.
Lhe
fllllct.ion
of
controlled
d(~cl.J'()lIi
('
x
w;Ldws
li
as been realised
with
vm;"lIs
dl'VÚ'('
S Ill,tkiug
\l*~
o[
diJkr<H1t.
plt YHin
tl
dkds;
ali tlw:>e eurly
Il
rtllll,ioll:
;
nll'
1I1
l/l
11
kf,('
(.odny.
Siul't
:
l'I(\('.(.I'OIl
Llrl
1
oc
'lI
wít.1t
Itl.'it!.l:d·
cal.hodl~s
cOllld
1I"t.
Il
lIpply
"II"II
I\
IJ
l '
IIIT"IIt.
1,0
driv
o
IIIOt.OH
I
II
JltI
\\11
'
1<
'
pl
n
l~ll<'d
wil,lr lri((
1r
voll,-
'I',"
cll"I
" I " 1
11
ri
I,!
I,!'
,
III
1""11 d
ll
d
l'l
l"
Y,
1.111'
,
1'
W
"I
CI!
,
III""I
III
t'C("d
I,
,Y
J'
~
1U
1
lil
ll
..
,
c)I
.II
I'
('
I!
8.1 Electronic Switching Devices
with
heated
cathode, called
thyratronsj
however, power rating, life
time
and
reliability were also
rather
limited so
that
they
were only useful for small
drives. High power in
the
MW-range, such as needed for rolling mills or mine
hoists, could only be supplied by mercury-arc valves having a liquid
mercury
cathode.
These
electronic valves were developed
to
high perfection
by
the
1950's
but
the
liquid Hg-cathode limited
their
use in vehicles
and
remained
a disadvantage, as well as
the
large size
and
the
relatively high voltage
drop
across
the
electric arc connecting cathode
and
anode (20-25 V).
Outside
a
narrow
operating
temperature
range, controlled mercury-arc valves showed a
tendency
to
occasional spontaneous arc-backs, i.e. conduction in reverse di-
rection resulting in
short
circuits
and
high over- currents.
This
required close
temperature
control by heating or cooling
the
steel vessels. AIso, mercury-
arc
converters needed relatively long intervaIs for deionisation which
made
them
unsuitable for
operation
at
higher frequency. After a brief interlude
with
magnetic amplifiers where magnetic materiaIs with
an
approximately
"square" hysteresis loop were used as "switches", alI these difficulties were
completely overcome with semiconductor switching devi ces (Transistor 1948,
Thyristor
1957) which have become available
at
steadily increasing power
and
with improved performance since
about
1960.
They
have replaced mercury-
arc valves even
at
the
highest power ratings in high volt age DC transmissions
(HVDC).
The
physics
of
a
thyristor
are
extensively dealt
with
in
the
literature,
e.g. [17,24], a simple description may suffice here.
ln
Fig. 8.2 a a small slice
of highly purified monocrystalline silicon having four electrons in
the
valence
band
is shown, which is doped with materiaIs of valence
three
or five, for
instance Boron or Phosphorus, so
that
three
P - n
junctions
are
created,
separating
the
layers
of
P -
and
n - conducting material.
The
inner layers
are relatively weakly doped while
the
outer ones, forming
the
anode
and
cathode
terminaIs, contain more doping materialj
the
inner
P2
layer is also
connected
to
a
gating
electrode supplied by a low impedance control circuito
The
following
steady
state
operating
conditions exist:
•
With
negative voltage between anode
and
cathode, u <
O,
the
diode junc-
tion
PI -
nl
is
reversely biased; this corresponds
to
the
reverse blocking
state
seen in Fig. 8.1 b.
•
If
positive voltage is applied (u >
O)
but
without
gate
current (u
g
<
O),
the
diode
nl
-
P2
has reverse bias which
constitutes
the
state
of
forward
blocking. Again, only negligible current flows in
the
load circuito
•
With
positive voltage, u >
O,
and
with a sufficiently large
gate
current,
ig >
O,
the
junction
nl
-
P2
becomes conducting,
with
the
load
current
i s
atnrating
the
region
nl
from
both
sides with charge carriers.
Thus
the
lhyri
::;
tor assumes very low resistance in forward direction.
When
i has
l')(
('e
(
~(
kd
;t
cl'/'I.ailllatching threshold
iL,
the
conducting
state
persists even
afl.e/'
Lh
e' (',
;tl
,(' (
',
lIl'rmlt:
is removed.