
3. Electron Paramagnetic Resonance Spectroscopy
Pulsed-EPR offers several different experimental approaches for the
measurement of relaxation times. Different methods used for the
measurement of the longitudinal relaxation time T
1
include saturation and
inversion recovery, echo saturation by fast repetition, stimulated-echo decay,
spectral hole-burning [23], and longitudinal detection PEPR [51]. Transverse
relaxation time T
m
(~ T
2
) can be determined using two-pulse echo decay and
Curr-Parcell sequence [23].
Pulsed-EPR is still limited to those systems with relaxation times longer
than the dead-time of ~ 10
–7
s. This limits the temperature range for
measurement of the radicals, starting at temperatures ~100–120 K and below
depending on the type of the sample. Lower temperatures are usually required
for most transition and rare earth ions.
A variety of pulsed-EPR experiments associated with measurement of
relaxation times, and their dependence on the different characteristics of the
system (e.g., concentration, temperature, matrix) have been described. These
have provided a rich array of information including:
(i) the irreversible
relaxation time of spin magnetization associated with the homogeneous EPR
line broadening and mechanism of relaxation [24, 27, 52–56]; (ii) separation
of different paramagnetic species from overlapping spectra based on
differences in their relaxation times [57–58]; (iii) the spatial distribution of
paramagnetic centers in solids. This can be used to detect whether or not the
particle distribution is homogeneous, to measure the local concentration, to
restore the distribution function and its variation during the diffusion or
reaction in the case of a pair distribution of paramagnetic centers, and to
determine the number of spins per group in the case of a group distribution
[59–64]; (iv) the times and mechanism of slow motions (>10
–7
s) of
paramagnetic species, paramagnetic functional groups, or molecular
fragments in their environment [65–67].
Tyryshkin et al. [68] recently published an interesting study of the
relaxation properties of the donor electron spins in phosphorus-doped
silicon (Si:P); these spins are a candidate two-level system (qubit) for
quantum information processing. An inversion recovery experiment and
a two-pulse echo were used to measure the longitudinal T
1
and
transverse T
2
relaxation times. In the inversion recovery experiment
2
T echo
S
SWSW
ÉÙ
the delay T, after the first inversion pulse was
varied while time W was kept constant, and the amplitude of the two-pulse
echo formed by the second and third pulses was measured. Experiments were
performed for P donors with natural Si and isotopically purified
28
Si.
In the inversion-recovery experiments both the Si:P and
28
Si:P samples
showed monoexponential decays, and T
1
was obtained by fitting a simple
exponential. The temperature dependence of 1/T
1
for these two samples varies
by 5 orders of magnitude (10
6
to 10
–1
s) over the temperature interval 7–20 K.
The Arrhenius dependence ln(1/T
1
) vs. (1/T) is linear, which is consistent with
144