Liquid phase epitaxy growth of HTSC films 301
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© Woodhead Publishing Limited, 2011
to a higher temperature than that of film B. These experimental results can be
explained as below. First, the a-axis oriented YBCO grain has smaller misfit than
the c-axis oriented one. Therefore, the existence of a-axis oriented YBCO grains
may relieve most of the stress energy, and also make the total system energy
descend, which indicates that film A has a lower energy film/substrate interface
than that in film B. Additionally, in terms of the semi-coherent interface energy
theory, the semi-coherent interface is divided into coherent regions and defect
regions. The total interface energy is proportional to the area fraction of the
interfacial defects.
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As a consequence, the semi-coherent interface in sample A is
more stable, leading to the higher superheating level of the YBCO grains on film
A from a thermodynamic perspective. In brief, the thermal stability and melting
behaviors rely highly on microstructures and crystallinity of YBCO thin films.
The correlation between thermal stability and in-plane alignments of films
In order to study the relationship of the thermal stability of REBCO films with
in-plane alignments, the melting behaviors of YBCO thin films denoted as C and D
with different in-plane orientations were compared and discussed on the grounds of
interface energy. The XRD results represent that both 0° and 45° Y123 grains exist
in film C, which means a weak epitaxial interface. On the other hand, a fourfold
symmetry indicates that only 0° oriented YBCO grains exist in film D, which
exhibits a semi-coherent interface at the film/substrate interface. By means of
HTOM, great differences were found between the melting behaviors of two films.
First of all, the melting of film C began at a temperature 40 °C lower than the T
p
of
Y123, which is 60 °C lower compared with that of film D. Secondly, the amount of
Y211 appeared in film D is much smaller than that of film C at the very beginning of
melting. However, a clear growth of Y211 was evident when the heating temperature
increased, while film C stayed uniform. What is more, a similar enlarging process
was observed in the size of Y211. Besides, the grains with 0° (Y211 < 001 > //
MgO < 100 >) and 45° (Y211 < 001 > // MgO < 110 >) orientation appeared
simultaneously on film C whereas on sample D most Y211 grains had 45° orientation,
which is known as the preferential growth orientation of Y211 on the MgO substrate.
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From the viewpoint of interface energy, the different melting mode of the two
films can be elucidated. For film C, the weak epitaxial interface implies the
existence of additional defects and grain boundaries, which stores a large excess
energy and constitutes an extra driving force for the melting, leading to a decrease
of the initial melting temperature. Besides, the nucleation and growth of Y211
grains were also encouraged due to the high-energy interface. As for film D, a
semi-coherent interface plays an important role in understanding the melting
behavior. It is well known that the energy of coherent and semi-coherent interfaces
is significantly lower than that of non-coherent ones.
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Meanwhile, the nucleation
of melting requires a sufficiently large driving force. These two points result in the
decomposition of Y123 at a temperature higher than the T
p
. Moreover, the semi-