
48
Some of them enable plane view, cross-section observations or both. Scratching
the sample with a tweezer or a diamond scribe to deposit on a TEM grid seldom
enables observations of the interface because of the thickness of the piece
scratched. Ion milling technique involves a mechanical polishing before
thinning the sample by pulling out atoms of the sample with an ion beam of
argon Ar+ (Fig. 1, left). A disadvantage of this technique is the introduction of
artifacts. The Si
3
N
4
membrane with a rectangular hole has CNTs grown on the
membrane as well as across the hollow. Unfortunately, the hole's edge in not
thin enough to see the interface. SACT consists in cleaving the sample along
the (120) and (110) planes, which form an angle of 18.43° (Fig. 1, right). This
small angle of the apex of the sample allows its transparency to electrons
(Walck et al., 1997). The disadvantage of this technique is the small area
transparent to electrons, which is not adapted for a sample having a few CNTs.
Figure 1. Left: Ion milling preparation stages; Right: Different stages of SACT.
For the time being, the ion milling technique is the only one, which enables
the systematical observation and analysis of the interface. Further
investigations, such as focused ion beam cutting and other membrane systems,
are presently being carried out.
References
Marty, L., Bouchiat, V., Bonnot, A.M., Chaumont, M., Fournier, T., Decossas, S., and Roche, S.
2002, Batch processing of nanometer-scale electrical circuitry based on in-situ grown single-
walled carbon nanotubes, Microelectronic Engineering 61-62:485-489.
Loiseau, A., Gavillet, J., Ducastelle, F., Thibault, J., Stéphan, O., Bernier, P., and Thair, S., 2004,
Nucleation and growth of SWNT: TEM studies of the role of the catalyst, C. R. Physique
4:975-991.
Walck, S.D., and McCaffrey, J.P, 1997, The small angle cleavage technique applied to coatings
and thin films, Thin Solid Films 308-309:399-405.