practically unchanged for dopant levels up to 20% Y in BaZrO
3
[37]. High
proton mobility and entropically stabilized protoni c defects even at high dopant
concentrations and the high solubility limit lead to the high proton conductivity
of this material. For temperatures below about 7008C and a water partial
pressure of 23 hPa, this exceeds the oxide ion conductivity of the best oxide
ion conductors. Although the bulk conductivity of Y-doped BaZrO
3
is even
slightly higher than the proton conductivity of BaCeO
3
-based oxides, the
chemical stability is by far more advantageous, as expected from the higher
electronegativity of Zr compared to Ce and the higher covalency of the Zr–O
bond. For the CO
2
partial pressure of air (38 Pa corresponding to 380 ppm),
pure BaZrO
3
is stable above 3008C, which is only slightly higher than for
BaTiO
3
and SrTiO
3
, which are known for their superior stabilities [12].
High bulk proton conductivity, high stability, and a wide ionic domain [47]
therefore make Y-doped BaZrO
3
an interesting parent compound for the
development of proton- conducting electrolytes for SOFC applications. Unfor-
tunately, the unfavorable brit tleness, the grain boundary impedance, and the
increasing phase instability with increasing Y-dopant level remain problems to
be solved. The addition of small amounts of BaCeO
3
or a compromise in the
choice of the kind of dopant may help to reduce these problems.
In any case, the potentially very high proton mobility in perovskite-type
oxides, which was discussed in detail in this chapter, may become a clue to the
reduction of the unfavorably high ope ration temperature of conventional
SOFCs.
Acknowledgments I thank R. Merkle for reading the proofs and U. Traub for preparing the
figures.
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13 Mechanisms of Proton Conduction in Perovskite-Type Oxides 271