CHAPTER 43 Advanced Processor Architecture
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CMOS is a combination of MOSFETs (Metal
Oxide Silicon Field Effect Transistors) having
complementary characteristics. Because MOS-
FETs can be produced with relatively simple
semiconductor processing, they make practical
producing exceedingly large numbers of gates on
a single semiconductor chip.
This panel explains what MOSFETs are, what
their complementary characteristics are, and how
they may be interconnected to form a NAND gate,
with which all other gates may be produced.
A MOSFET is produced by heavily doping a
lightly doped region on the surface of a silicon
crystal substrate, to produce a channel of high
conductivity. Centered over this channel is a tiny
metal plate— called a “gate”— insulated from the
crystal by an extremely thin layer of oxide.
Terminals are provided at both ends of the chan-
nel; a terminal for a control voltage, on the gate.
Two complementary doping schemes are
used. In one, N-type doping—which produces
free negative charge carriers (electrons)—is used
for the channel and P-type doping—which pro-
duces free positive charge carriers (holes)—is
used for the substrate.
At the channel's lower edge, holes and elec-
trons combine, depleting the number of free car-
riers there, and narrowing the channel .
If a negative voltage corresponding to a
binary digit is applied to the gate, it attracts more
holes from the substrate. They combine with more
free electrons, narrowing the channel sufficiently
to pinch it off, so no current can pass through.
If a positive voltage corresponding to a binary
digit is applied to the gate, it repels the holes in the
substrate, widening the channel and maximizing
its conductivity.
The gate thus acts as a switch, which is closed
by a positive control voltage and opened by a neg-
ative one.
The other doping is P for the channel and N
for the substrate.
With it, the control voltage has the opposite effect.
A positive voltage opens the switch; a negative,
closes it.
A NAND gate may be constructed by intercon-
necting 2 N-channel and 2 P-channel MOSFETs,
as shown below. When inputs A and B are positive,
both P-channel switches open, disconnecting the
positive supply voltage.
And the two N-channel switches close, connect-
ing the negative supply voltage to the output, C.
When A or B is negative, at least one of the
two P-channel switches closes, connecting the
positive supply voltage to C.
CMOS: Key To Practicality Of Exceptionally Large Gate Arrays
Gate
(–)
Gate
(+)
Equivalent Circuit, P-Channel MOSFET
PP
Equivalent Circuit, N-Channel MOSFET
Gate
(+)
Gate
(–)
NN
And at least one of the two N-channel switches
opens, disconnecting the negative supply voltage.
Gate
Oxide
Insulation
MOSFET
Metal
Channel
Silicon Substrate
N - Channel
MOSFET
Gate
NN
P
P - Channel
MOSFET
NAND GATE
(Input A Assumed
Negative; B ,
Positive)
NAND GATE
(Inputs A and B
assumed positive)
(–)
C
A
B
P
P
N
N
(+)
(+)
(–)
Gate
PP
N
(+)
(–)
C
A
B
P
P
N
N
(–)
(+)
(+)
(+)