
8Decomposition Methods for Differential Equations Theory and Applications
reaction processes and implicit partial differential equation (PDE) solvers for
the transport processes, see [124].
1.3.2 Crystal Growth
The motivation for modeling an accurate technical apparatus or physical
process is coming from the demand to have a tool for developing an optimal
and efficient apparatus for foreseeing the physical effects and protecting the
environment.
The basic idea for the model is the transfer between reality and the possible
abstraction for an implementable model. Often some interested effects are
sufficient to develop a simpler model from the reality.
Silicon carbide (SiC) is a wide-bandgap semiconductor used in high-power
and high-frequency industrial applications: SiC serves as substrate material
for electronic and optoelectronic devices such as MOSFETs, thyristors, blue
lasers, and sensors (see [152] for a recent account of advances in SiC devices).
Its chemical and thermal stability make SiC an attractive material to be used
in high temperature applications as well as in intensive radiation environ-
ments. For an economically viable industrial use of SiC, growth techniques
for large diameter, low defect SiC boules must be available. Recent years
have seen steady improvement (see [122]) of size and quality of SiC single
crystals grown by sublimation via physical vapor transport (PVT, also known
as modified Lely method, see, e.g., [140]). However, many problems remain,
warranting further research.
Typically, modern PVT growth systems consist of an induction-heated
graphite crucible containing polycrystalline SiC source powder and a single
crystalline SiC seed (see Figure 6.19). The source powder is placed in the hot
zone of the growth apparatus, whereas the seed crystaliscooledbymeansofa
blind hole, establishing a temperature difference between source and seed. As
the SiC source is kept at a higher temperature than the cooled SiC seed, sub-
limation is encouraged at the source and crystallization is encouraged at the
seed, causing the partial pressures of Si, Si
2
C,andSiC
2
to be higher in the
neighborhood of the source and lower in the neighborhood of the seed. As the
system tries to equalize the partial pressures, source material is transported
to the seed which grows into the reaction chamber.
Because of the complex processes, a careful study is important to correctly
design the numerical simulations, [165]. Based on this background the combi-
nation of discretization and solver methods is an important task. We propose
the decomposition methods of breaking down complicated multi-physics in
simpler physics. The time-decomposition methods and their extended ver-
sions with more stabilized behavior are based on operator-splitting methods,
see [70]. With these methods a useful decoupling of the time scales is possi-
ble, and the solvers can be applied on the different time scales. Further, the
space-decomposition methods are based on the Schwarz waveform-relaxation
methods and their accurate error estimates, see [54]. The methods decouple
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