
Since the measured activation volumes are of the
order of 300 nm
3
the reduction of the wall energy
should extend over dimensions of B5d
B
(B20 nm).
The problem arising here is the fact that from high-
resolution transmission electron microscopy images
(Kronmu
¨
ller et al. 1996) it is known that the nano-
crystalline grains are perfect with the exception of the
grain boundaries of width 1–3 nm. Accordingly, nei-
ther the values measured for v nor for a
B
are com-
patible with the real microstructure. The situation is
different for the nucleation model where the reversion
of magnetization starts in regions of width 0.5–2 nm
in agreement with the microstructure. Since the glo-
bal theory is just the integrated expression of the
micromagnetic equation, the microstructural para-
meters, a
s
, a
B
, and a
v
may be identified with the
parameters a
K
and a
ex
, i.e., 4a
s
a
B
/pa
v
a
K
a
ex
, which
enlightens one as to the seeming existence of two dif-
ferent theories.
6. Pinning of Domain Walls by Planar Barriers in
Sm
2
Co
17
-based Magnets
Planar defects of atomic width are stacking faults,
phase and antiphase boundaries, and planar precip-
itates as the cell walls of copper-doped Sm
2
Co
17
PMs.
The pinning of domain walls by planar defects has
been treated by the continuum theory of micromag-
netism (Kronmu
¨
ller 1973, Friedberg and Paul 1975,
Hilzinger 1977, Gaunt and Mylvaganam 1981) and
on the basis of the Heisenberg model (Hilzinger and
Kronmu
¨
ller 1975). The pinning effect is due to the
modification of the wall energy by the planar defect.
If the planar defect has extensions larger than the
wall width the coercive field is given by
H
c
¼
1
2J
s
1
cosc
0
dgðzÞ
dz
max
N
eff
M
s
ð18Þ
where dg(z)/dz7
max
denotes the maximum slope of
wall energy. In the case of a linear barrier, dg(z)/
dz7
max
is given by 7g
II
g
I
7/D, where g
I,II
denote the
wall energies in the two neighboring phases and D
corresponds to the width of the defect.
In the case of a narrow defect with Dod
B
the co-
ercive field is determined by the discrete Heisenberg
model (Hilzinger and Kronmu
¨
ller 1975) where the
planar defect is described by its n individual lattice
planes of distance d. Each plane, i, is characterized by
a local anisotropy constant, K
i
, and an exchange
constant, A
i,i þ1
, between neighboring planes. The
result of a lengthy calculation is
H
c
¼
p
3O3
2K
1
J
s
1
cosc
0
d
d
B
X
n1
i¼1
A
A
i;iþ1
K
i
1
K
1
ð19Þ
where A, K
1
, and J
s
are the material constants of the
matrix phase and d
B
is the wall width. Equation (19)
has a wide range of applications and may be applied
for the interpretation of the Sm
2
Co
17
-based magnets
with additives of iron, copper, and zirconium. For
these PMs the largest coercivities of the order of 3–4
T have been found. These hard magnetic properties
are obtained after a homogenizing treatment at
1100–1200 1C (30 min), isothermal aging at 850 1C
(10–25 h), and a subsequent slow cooling (0.5–
1.0 1C min
1
) to 400 1C followed by quenching to
room temperature. During the annealing procedure
a cellular pyramidal structure develops composed
of three phases (Livingston and Martin 1977,
Hadjipanayis 1982): cells of about 100 nm in size
corresponding to an iron-rich 2:17 matrix, cell walls
of SmCo
5
structure separating the cells enriched in
copper and poor in iron and zirconium, and a zirco-
nium-rich lamellar platelet phase, called a Z-phase,
which is oriented perpendicular to the c-axis of the
cells. The cell walls of width 5–10 nm may act as a
barrier or pinning center depending on the copper
content and the degree of order in the 1:5 cell wall. In
the particular case of Sm(Co
bal
Cu
0.08
Fe
0.22
Zr
0.02
)
8.5
Goll et al. (2000) have performed an analysis of the
element distributions within the cells and cell walls by
HRTEM-EDX. The corresponding profile of the
copper and iron distribution and of the anisotropy
constant is shown in Fig. 12 (Goll 2001). The anisot-
ropy constant varies from a value of K
1
2:17
¼
2.9 MJ m
3
to K
1
1:5
¼8.1 MJ m
3
within a narrow
width of B2 nm. Assuming that this increase of near-
ly a factor 3 takes place over 10 atomic layers, where
d ¼0.2 nm and d
B
¼5 nm, m
0
H
c
¼(2K
1
/M
s
) 0.22 is
obtained from Eqn. (19) for a constant exchange en-
ergy. With the a parameter for the pinning a
pin
¼0.22
for room temperature a coercive field of 2.8 T is ob-
tained, in excellent agreement with the experimental
results. Figure 13 shows plots of m
0
H
c
/J
s
vs. 2m
0
K
1
/J
s
2
for different annealing treatments of sintered mag-
nets. Over a wide temperature range between 170 K
Figure 11
Plots for the determination of a
s
a
B
and N
eff
for the
global model of the PMs of Fig. 10.
74
Coercivity Mechanisms