
© 1999 by CRC Press LLC
various doses of C
+
, B
+
, N
2
+
, and Ar
+
ion species at 200 keV energy. The coefficient of friction and wear
factor of C
+
-implanted silicon samples as a function of ion dose is presented in Figure 16.20 (Gupta et al.,
1993). The friction and wear tests were conducted using a ball-on-flat tribometer (Gupta et al., 1993).
Each data bar represents the average value of four to six measurements. The coefficient of friction and
wear factor decrease drastically with ion dose. Silicon samples bombarded above 10
17
C
+
cm
–2
exhibit
extremely low values of coefficients of friction (typically 0.03 to 0.06 in air) and the wear factor (reduced
by as much as four orders of magnitude). Gupta et al. (1993) reported that a decrease in coefficient of
friction and wear factor of silicon as a result of C
+
ion bombardment occurred because of formation of
silicon carbide rather than amorphization of silicon. Gupta et al. (1994) also reported an improvement
in friction and wear with B
+
ion implantation.
For magnetic disk drive applications, macroscale friction and wear experiments have been performed
using a magnetic disk drive with unoxidized, oxidized, and implanted pins sliding against amorphous
carbon–coated magnetic disks lubricated with perfluoropolyether lubricant (Bhushan and Venkatesan,
1993; Venkatesan and Bhushan, 1993, 1994). The data of silicon samples were compared with the
commonly used slider materials in disk drives: Al
2
O
3
–TiC and Mn–Zn ferrite. Representative profiles of
the variation of the coefficient of friction with number of sliding cycles for Al
2
O
3
–TiC slider and uncoated
and coated silicon pins are shown in Figure 16.21. Friction data obtained from the various tests conducted
in ambient air in terms of the initial coefficient of friction, the contact life, i.e., the number of revolutions
before the coefficient of friction increased by a factor of two, the maximum value of the coefficient of
friction for cases when the increase was more than by a factor of two are presented in Table 16.5. For
the case of oxidized samples, a significant increase (by a factor of two or more) was not observed and
so the range of variation of the coefficient of friction for the duration of 50,000 cycles is indicated. It
was found that crystalline orientation of silicon has no effect of friction and wear. For bare silicon, after
initial increase in the coefficient of friction, it drops to a steady state value of 0.1 following the increase,
as seen in Figure 16.21a. The rise in the coefficient of friction and damage on the pin surface for Si(111)
is associated with the transfer of amorphous carbon from the disk to the pin, oxidation-enhanced fracture
of pin material followed by tribochemical oxidation of the transfer film. The drop is associated with the
formation of a transfer coating on the pin, Figure 16.22a. The mechanism of transfer and tribochemical
oxidation was seen to be also operative for the friction increase for Al
2
O
3
–TiC and Mn–Zn ferrite
pin/slider materials tested in ambient air. As seen in Table 16.5 and Figure 16.21b, dry-oxidized Si(111)
exhibits excellent characteristics and this behavior has been attributed to the chemical passivity of the
oxide and lack of transfer of DLC from the disk to the pin. The behavior of PECVD was comparable to
that of dry oxide, but for the wet oxide there was some variation in the coefficient of friction (0.26 to
0.4). The difference between dry and wet oxide has been attributed to increased porosity of the wet oxide
(Bhushan and Venkatesan, 1993; Pilskin, 1977).
Since tribochemical oxidation was determined to be a significant factor, experiments were conducted
in dry nitrogen (Venkatesan and Bhushan, 1993, 1994). The variation of the coefficient of friction for a
silicon pin sliding against a thin-film disk is shown in Figure 16.21a. For comparison the behavior in
ambient is also shown. It is seen that in a dry nitrogen environment, the coefficient of friction of Si(111)
sliding against a disk decreased from an initial value of about 0.2 to 0.05 with continued sliding. Similar
behavior was also observed while testing with Al
2
O
3
–TiC and Mn–Zn ferrite pins and sliders. Based on
SEM and chemical analysis this behavior has been attributed to the formation of a smooth amorphous-
carbon/lubricant transfer patch and suppression of oxidation in a dry nitrogen environment,
Figure 16.22b.
The experiments in dry nitrogen indicated that low friction conditions can be achieved in dry nitrogen
although transfer of carbon from the disk to the pin occurs. An experiment was performed with a
hydrogenated amorphous carbon–coated (~18 nm thick) silicon pin sliding against a lubricated thin-
film disk in dry nitrogen. The friction variation with sliding for this experiment is shown in Figure 16.23.
No damage for the pin and disk surfaces could be detected after this experiment.
Based on macrotests using disk drives, we find that the friction and wear performance of bare silicon
is not adequate. With single and polyscrystalline silicon sliding against an amorphous carbon–coated