Springer-Verlag Berlin, 2010, 326 pages
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
This book is designed to bring to the readership for the first time, a comprehensive overview of the state-of-the-art GaN crystal growth technology, reflecting the tremendous progress made particularly over the last decade, drawing the possible path we still have to cover to realize our common goal: large-size, dislocation-free GaN crystals to fabricate non-polar, semi-polar, and polar GaN wafers in sufficient quantity and at reasonable price.
Contents
Part I Market for Bulk GaN Crystals
Development of the Bulk GaN Substrate Market
Part II Vapor Phase Growth Technology
Hydride Vapor Phase Epitaxy of GaN
Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
Nonpolar and Semipolar GaN Growth by HVPE
HighGrowthRateMOVPE
Part III Solution Growth Technology
Ammonothermal Growth of GaN Under Ammono-Basic Conditions
A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method
Acidic Ammonothermal Growth Technology for GaN
Part IV Flux Growth Technology
High Pressure Solution Growth of Gallium Nitride
A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal
Low Pressure Solution Growth of Gallium Nitride
Part V Characterization of GaN Crystals
Optical Properties of GaN Substrates
Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy
This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.
This book is designed to bring to the readership for the first time, a comprehensive overview of the state-of-the-art GaN crystal growth technology, reflecting the tremendous progress made particularly over the last decade, drawing the possible path we still have to cover to realize our common goal: large-size, dislocation-free GaN crystals to fabricate non-polar, semi-polar, and polar GaN wafers in sufficient quantity and at reasonable price.
Contents
Part I Market for Bulk GaN Crystals
Development of the Bulk GaN Substrate Market
Part II Vapor Phase Growth Technology
Hydride Vapor Phase Epitaxy of GaN
Growth of Bulk GaN Crystals by HVPE on Single Crystalline GaN Seeds
Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Technology
Nonpolar and Semipolar GaN Growth by HVPE
HighGrowthRateMOVPE
Part III Solution Growth Technology
Ammonothermal Growth of GaN Under Ammono-Basic Conditions
A Pathway Toward Bulk Growth of GaN by the Ammonothermal Method
Acidic Ammonothermal Growth Technology for GaN
Part IV Flux Growth Technology
High Pressure Solution Growth of Gallium Nitride
A Brief Review on the Na-Flux Method Toward Growth of Large-Size GaN Crystal
Low Pressure Solution Growth of Gallium Nitride
Part V Characterization of GaN Crystals
Optical Properties of GaN Substrates
Point Defects and Impurities in Bulk GaN Studied by Positron Annihilation Spectroscopy