Fahlman B.D. Materials Chemistry

Подождите немного. Документ загружается.

References and Notes

Halimaoui, A. in Properties of Porous Silicon, Canham, L. T., ed., IEE INSPEC – The Institution of

Electrical Engineers: London, 1997.

For example, see: Wayner, D. D. M.; Wolkow, R. A. J. Chem. Soc., Perkin Trans. 2002, 2, 23.

For example, see: Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J.; Lieber, C. M. Appl. Phys. Lett.

2001, 78, 2214.

Note: the ‘SLS’ acronym has been reserved for “solution-liquid-solid” growth (for example, see:

Trentler, T. J.; Hickman, K. M.; Goel, S. C.; Viano, A. M.; Gibbons, P. C.; Buhro, W. E. Science 1995,

270, 1791), so we hereby deﬁne ‘SoLS’ as “solid-liquid-solid”.

For example, see: (a) Yan, H. F.; Xing, Y. J.; Hang, Q. L.; Yu, D. P.; Wang, Y. P.; Xu, J.; Xi, Z. H.;

Feng, S. Q. Chem. Phys. Lett. 2000, 323, 224. (b) Lee, E. K.; Choi, B. L.; Park, Y. D.; Kuk, Y.; Kwon, S.

Y.; Kim, H. J. Nanotechnology 2008, 19,1.

Figure C.9. Scanning electron micrograph of silicon nanowires (SiNWs) grown via SLS at 1,000



Image courtesy of Phil Oshel, Department of Biology, CMU.

718 Appendix C. Materials-Related Laboratory Experiments

Index

Absorption edges, 630–632

Accelerating voltage, 292, 593, 594, 597,

600, 603–604, 619, 620, 640, 697,

708–709

Accumulation layer, 261–262

Acheson process, 140

Addition, 5, 20, 159, 242, 349, 461, 593

polymerization, 356, 358–364, 367,

372–373

Aerogel, 119–121, 228, 677

AES. See Auger electron spectroscopy

AFC. See Alkaline fuel cell

AFM. See Atomic force microscope

AFM tip, 319, 648, 649, 651

Agglomeration, 13, 132, 173, 187, 460,

464, 467, 474–476, 498, 502, 505,

506, 510, 511, 514, 518, 519, 520,

525, 602, 695, 697

Aggregates, 80, 138, 182, 185, 195, 462,

466, 467, 472–473, 498, 516, 520,

554, 620, 632

Aging, 117, 372

Alchemists, 4–5

Alcogel, 117, 119

ALD. See Atomic layer deposition

Alkaline fuel cell (AFC), 144–146

Allotrope(s), 18, 23–25, 44, 178–181,

220–221, 229, 461, 486, 541

Alloy(s), 2, 17, 157, 291, 402, 508, 594

Alternating copolymer, 354

Aluminum, 3, 41, 42, 76, 78, 79, 82,

93, 114–116, 125, 126, 138, 139,

159, 161–164, 174, 177, 184, 201,

214, 218, 219, 231, 300, 306, 325,

349, 364, 369, 395, 397, 437, 468,

470, 538, 588, 596, 623–624, 632,

634, 671, 697–700, 708–711, 714

alloys, 211–212

Alumoxanes, 114–116, 120, 369, 371

Amalgamation, 204–205

Ambient, 23, 24, 75, 169, 180, 268, 294,

303, 319, 403, 447–448, 463–464,

483, 647, 648, 678, 703

Amorphous, 1, 2, 13–14, 17, 18, 20, 26,

74, 75, 89, 113–148, 231, 233, 276,

296, 331, 337, 351, 352, 354,

380, 390–391, 398, 403, 431,

474–477, 492–493, 500, 530,

531, 545–546, 553, 558, 597–598,

613, 625, 632, 688, 694

metal, 18, 113–114, 233

silicon (a-Si:H), 337

Angle-resolved UPS (ARUPS), 631

Angle-resolved XPS (ARPES), 631

Anionic addition polymerization, 362, 367

Anionic polymerization, 362, 364, 367

Anisotropic, 34, 99, 290, 291, 331, 417,

418, 422

etching, 290, 291

Annealing, 18, 114, 120, 135, 169, 172,

173, 186, 194, 196–198, 200, 204,

212, 219, 272, 276, 280–281, 290,

292–294, 296, 312, 385, 491, 493,

498, 502, 508, 536, 552, 596, 655

Anodic oxidation, 218–219

Anodization, 142, 713, 714

Anodizing, 142, 218–219, 559, 596,

713, 714

719

Anticorrosion, 213, 220, 221

Antiferromagnetic coupling, 224,

433, 436

Antiferromagnetism, 54–55, 224, 225,

432, 433, 436

Antiﬂuorite, 45

Antigraphitizers, 184–185

Antiphase boundaries (APBs), 77

APBs. See Antiphase boundaries

APCVD, 303

APT. See Atom-probe tomography

Aqua regia, 205, 291

Arborols, 376, 380

Arc discharge, 545

Arc-evaporation, 487, 490

ARPES. See Angle-resolved XPS

Arrhenius equation, 87

ARUPS. See Angle-resolved UPS

Asphalt, 3, 137, 205, 672

Astigmatism, 592

Asymmetric unit, 29, 65

Atactic, 354–355, 364

Atomic force microscope (AFM), 3–4, 90,

318–319, 537, 646–651

Atomic layer deposition (ALD), 304, 305,

307–310, 559

Atomization, 101, 171, 173–175, 498

Atomizer, 173, 174

Atom-probe tomography (APT), 643–646

Atom-transfer radical living polymerization,

360, 361

Atom-transfer radical polymerization

(ATRP), 360

ATRP. See Atom-transfer radical

polymerization

Auger electron(s), 246, 606, 608, 612,

614, 619–620, 625, 627, 634, 637

Auger electron spectroscopy (AES),

10, 498, 606, 608, 617, 620,

624–626, 636

Austempering, 197, 198

Austenite, 77, 178, 180–182, 184, 188–197,

201, 203, 214–217

stabilizers, 194, 201

Austenitic, 182, 188–190, 194, 215,

216, 236

stainless steels, 201, 203

Austenize, 188, 189, 197, 203

Autocatalytic agglomeration, 520, 521

Autocatalytic surface growth, 520, 523

Autografting, 142

Auxetic material, 82, 84

Back bonding, 434–435

Backscattered electrons (BSE), 606,

619–622

Backscattering, 606, 623, 632

Backscattering Kikuchi diffraction

(BKD), 623

Bainite, 182, 189–191, 194–197

Bain transformation, 194

Ballistic deﬂection transistors, 265

Ball-milling, 18, 226, 231

Band diagram, 104, 105, 240, 241, 247–249,

261, 323, 324, 427, 560, 615

Bandgap(s), 52, 53, 104, 105, 107–108, 113,

209, 239–244, 246–247, 267, 273,

322–325, 331, 337–338, 419, 424–425,

478–480, 534, 560, 562, 713

direct/indirect bandgap, 246, 247, 273,

322, 323, 325, 562, 713

Basic oxygen furnace (BOF), 164, 166–168

BCC. See Body-centered cubic

Beryl, 96–98

Bessemer process, 671

BFRs. See Brominated ﬂame retardants

Biaxial strain, 270

Bimetallic nanoclusters, 508, 509

Binding energy, 21, 52, 615, 630, 632

Bioaccumulation, 466–467

Biocompatible/biocompatibility, 10, 122,

141, 142, 144, 217, 362, 391, 394,

402, 410, 414, 429

Biodegradable polymers, 393–402, 410–412

Biomaterials, 10, 122, 141–144, 393–417

Biomedical, 362, 381–382, 391–392, 398, 712

Biomimetics, 565, 566

Biopolymers, 351, 358, 639

Bioresorption, 394, 398

Bipolaron, 420, 422–423, 425

Birefringence, 99

Bismuth strontium calcium copper oxide

(BSCCO), 54

BKD. See Backscattering Kikuchi diffraction

Bloch wall, 222, 225

Bloch wavefunctions, 108, 246

Block copolymers, 317, 354, 384, 387, 515,

656, 674

Body-centered cubic (BCC), 34, 37, 39,

40, 43, 69, 70, 77, 82, 85, 87, 175,

178–181, 194, 196, 201, 203, 208,

212, 214, 221, 223

Boehmite, 115, 116, 219

720 Index

BOF. See Basic oxygen furnace

Boltzmann distribution, 48

Bond densities, 274

Bond resonance energies (BREs), 488–489

Bond thermolysis, 245

Borosilicate glass, 14, 130–131

Bottom-up, 6–8, 296, 457, 472, 474, 476,

501, 525, 562, 564

Boundary layer, 300–302, 516

Bowtie dendrimer, 378, 382

Bragg’s law, 67, 69, 70, 73, 109, 623

Brass, 174, 208, 209, 516, 538

Bravais lattices, 35–37, 59, 62, 603

Bremsstrahlung, 612, 619

BREs. See Bond resonance energies

Bright-ﬁeld imaging, 597, 606, 610, 620, 623

Brillouin zone (BZ), 110–111, 113,

247–250, 561

Brittleness, 2, 14, 17, 55, 87, 139, 142, 144,

164, 172, 173, 182, 189, 194, 196,

200, 208, 209, 215, 218, 354, 541,

598, 711

Brominated ﬂame retardants (BFRs),

440–441, 443

Bronze, 2, 3, 157, 174, 204, 208, 463, 669

Bronze age, 2

BSCCO. See Bismuth strontium calcium

copper oxide

BSE. See Backscattered electrons

Buckminsterfullerene, 18, 486, 488, 489,

495, 675

Buckybowls, 493

Bulk defects, 76, 80

BZ. See Brillouin zone

Calcium-silicate-hydrate (CSH), 136, 138

CAM. See Chemical ampliﬁcation

Capacitance, 262–264, 266–267, 273,

294, 295

density, 263

Capacitor, 136, 141, 158, 171, 255, 261, 267

Carat, 206

Carbide(s), 38, 50, 139, 176, 184, 185,

187, 189, 191–195, 197, 201, 212,

218, 219, 251, 296, 298, 498, 538,

545, 554, 559, 672, 694

Carbon-doped oxide (CDO), 294

Carbon nanotube (CNT)

aligned CNTs, 313, 546, 549

armchair, 531–534, 544, 562

chiral, 531, 557

CNT FETs, 536, 537

endcap, 542, 544, 554

forests, 313, 539, 546

zig-zag, 531, 557

Carburization, 197, 218

Cast iron(s), 3, 180, 184, 200

Catalysts, 8, 46, 115, 141, 145, 146, 158,

231, 298, 354, 358, 364, 366, 369–371,

398, 402, 411, 444–448, 546, 547,

549–554, 556–559, 617, 623, 625,

632–634, 673, 678, 693–696, 712, 714

Catenasulfur, 24, 25

Cationic addition polymerization, 362, 364

CBED. See Convergent beam electron

diffraction

CCD camera, 66, 73, 593, 623

CdI

structure, 36, 43

CDO. See Carbon-doped oxide

Cement, 2, 136–138, 144, 219, 251, 670, 671

Cementite, 180, 182, 184, 187–189,

195–196, 218

Cementitious, 114, 136–139

Cermet, 146

CFM. See Chemical force microscopy

Chain addition polymerizations, 356

Chain-transfer, 359, 360

Channel

length, 263, 268

width, 263

Char, 443

Charge transfer, 98–99, 423, 430

Charging, 167, 624, 625, 627, 640, 642

Chemical ampliﬁcation (CAM), 286–288

Chemical force microscopy (CFM), 649

Chemical mechanical polishing (CMP),

289–290, 292

Chemical vapor deposition (CVD)

aerosol delivery, 312, 599, 600

Chemoluminescence, 323–324

Chips, 6, 91, 122, 171, 253, 255–257, 262,

263, 270–272, 274, 292, 295, 325,

536, 565, 586, 674, 677

Chirality vector, 531

Chromatic aberrations, 594

Clathrate, 25, 332, 333

Clean room, 253–255, 273

Cleavage, 89–92, 411, 602

Click chemistry, 386–388

Clinker, 138, 321

Close-packed, 17, 33–36, 39, 40, 42, 46,

87, 175, 214, 317, 524

Index 721

Clusters, 77, 115, 191, 224, 284, 302,

427, 432, 462, 474, 475, 483–488,

492, 519–524, 545, 552, 554, 638,

640, 641

CMOS. See Complementary metal-oxide-

semiconductor

CMOS IC. See Complementary metal-oxide-

semiconductor integrated circuit

CMP. See Chemical mechanical polishing

CNT. See Carbon nanotube

Coatings, 118, 122, 141, 144, 158, 171,

184, 218–220, 296, 352, 362, 376,

382, 384, 386, 459, 546, 559, 624

Coercive magnetic ﬁeld, 223

Coinage metals, 204–208, 483

Cold FE, 595, 596

Cold-walled reactors, 302

Cold-welding, 176

Cold-working, 185, 200, 203

Colligative property index, 358

Collodion, 598

Colloidal, 114, 131, 132, 135, 322, 503,

510, 511

growth, 503, 510

suspensions, 114, 131

Colloids, 460, 476, 544, 655

Colored golds, 207

CoMoCAT

, 550

Complementary metal-oxide-semiconductor

(CMOS), 260, 271–274, 276, 278,

292, 295, 304, 536

Complementary metal-oxide-semiconductor

integrated circuit (CMOS IC), 271,

273, 276, 278, 292

Composites CNT-based, 541

Compression-strained channel, 269

Concrete, 82, 121, 136–138, 538, 671

Condensation, 51–53, 114–115, 118, 305,

356, 358, 373, 374, 376, 498, 505,

545, 627, 628

polymerization, 358

Condenser, 593, 612, 687, 691

Conduction, 52, 53, 93, 103–108, 113, 136,

205, 206, 239, 241–247, 249, 262,

269, 325, 328, 335, 337, 340, 427,

478–480, 561, 615

Conduction band, 52, 53, 93, 103–108, 113,

136, 205, 206, 239, 241–247, 249,

262, 269, 325, 328, 335, 337, 340, 427,

478–480

Conductive polymers, 354, 417–427, 429

Conformal, 296, 298, 299, 303–305, 414

Contact lenses, 10, 141, 393, 402–410,

672, 674

Convergent, 378, 381, 382, 603

Convergent beam electron diffraction

(CBED), 603

Convergent dendrimer, 381

Cooling curves, 179, 189, 191, 236

Cooper pair, 51–53, 55, 422–423

Coordination number, 23, 33, 37, 43, 44,

115, 175, 274, 615, 632

Copolymer, 317, 352, 354, 382, 384, 387,

398, 404–406, 411, 412, 515, 656, 674

Corrosion, 130, 139, 141, 158, 169, 171, 197,

200–204, 211, 213, 214, 217–220, 228

resistance, 169, 171, 197, 200–202, 211,

213, 214, 217–220, 228

Corundum, 41, 42, 67, 89, 92, 94, 96

Cossee–Arlman mechanism, 370–372

Covalent bonding, 16, 18, 21, 41, 44,

191–192, 209, 213, 356, 502

Covalent network solids, 16, 18, 21, 41, 44,

191–192, 209, 213, 356, 502

Covalent sidewall, 541, 543

Critical temperatures, 51–53, 55, 155,

179, 429, 431

Critical thinking, 6–11

Cross-linked, 24, 313, 317, 320, 321, 403

micelles, 515

Crown glass, 130

Crystal, 1, 13, 178, 240, 364, 478, 588,

672, 700

classes, 59, 102

ﬁeld theory, 94–96

lattice, 16–18, 22, 29, 30, 34–37, 44, 56,

58, 62, 68, 71, 72, 74–76, 78, 79, 84,

87–89, 92, 93, 99, 103, 106, 108, 113,

130, 178, 191–193, 195, 199, 207, 208,

213, 240–241, 246, 247, 252, 293, 603

Crystalline, 1, 13–15, 17, 18, 20, 22–114,

120, 126, 127, 140, 141, 144, 210, 217,

218, 249, 254, 269, 292, 331, 337, 351,

352, 380, 390, 391, 398, 437, 476, 530,

531, 553, 559, 593, 594, 603–605, 623,

631, 632, 700–702, 704, 714, 715, 717

Crystallinity, 139, 352, 354, 380, 388, 390,

398, 411, 460, 476, 502, 638, 701

Crystallographic axes, 30, 32, 99

Crystallographic point group(s), 56, 58–63,

101, 102

Crystallography, 56, 72, 75, 620–621, 623

Crystal systems, 30, 40, 59, 62, 63, 65, 85,

99, 102

722 Index

CsCl structure, 42, 43, 209, 215

CSH. See Calcium-silicate-hydrate

Cubic, 30, 32–37, 39–45, 49, 59, 62, 63,

70–72, 87, 99, 101, 102, 146, 147,

175, 192, 194, 210, 221, 255, 304,

417, 498, 501, 604, 716

Cubic close-packing (Ccp), 34, 35, 39, 49

Cupellation, 204

Curatives, 437

Curie, 101, 102, 225, 226, 485

Curing, 317, 351–353, 437, 446, 652, 654

Czochralski (CZ), 27, 252, 253, 672

Dark-ﬁeld imaging, 483, 597, 606,

612, 617

Debroglie, 72, 246, 589

Decarburization, 197, 202

Decomposition temperature (T

dec

), 228–231,

252, 306–308, 311

Deep UV (DUV), 284, 286, 313

Defect-site, 268, 426, 461, 541, 544

Deformation elastic, 17, 82

Deformation modes, of SWNTs, 538

De Gennes dense packing, 385

Degree of polymerization (DoP), 356

Deliquescent, 23

Dendrimers, 315, 353, 376, 378–385,

387, 389, 390, 413, 414, 476,

505–508, 511, 512, 529, 549, 602,

653, 675

Dendron, 378, 384

Density of states (DOS), 107, 108, 206,

241–242, 249, 478, 484, 485, 534,

535, 615, 634, 647–648

Deoxyribonucleic acid (DNA), 322, 351,

461, 467, 470, 542, 565, 684, 685

Depleted region, 262

Depleted uranium (DU), 231–233, 556

Detwinned, 216

Diamagnetism(ic), 50, 51, 55, 209, 221,

222, 427, 436

Diamond, 18, 34, 44, 82, 88, 89, 131, 139,

185, 209, 213, 240, 241, 253, 272,

595, 599

Dielectric, 56, 136, 264, 294–296, 379–380,

615, 642

constant, 21, 99, 122, 266–268, 385,

479–482

strength, 268

Diels-Alder reaction, 446, 448

Dies, 141, 171, 175, 176, 198–199, 295

Differential scanning calorimetry (DSC),

11, 25, 26, 310, 311, 338, 339, 652,

654, 674

Diffusion, 18, 27, 28, 78–80, 88, 171, 178,

182, 194, 197–198, 259, 265, 268,

280, 287, 295, 301, 315, 337, 404,

409–411, 440, 461, 462, 516, 546,

554, 626, 628, 650, 684, 694

Diode, 255, 258, 321–330, 335, 418, 714

Dip-pen nanolithography (DPN), 318–319,

321, 322, 525

Direct bandgap semiconductors, 247, 322,

323

Direct liquid injection (DLI), 307, 308

Dislocation(s), 76, 84–87, 168, 185, 194

Divergent, 376, 381

syntheses, 378

DLI. See Direct liquid injection

DMA/DMTA. See Dynamic mechanical

(thermal) analysis

DNA. See Deoxyribonucleic acid

DoP. See Degree of polymerization

Dopants, 76, 78, 79, 93–94, 96, 98, 126,

131, 132, 134, 146, 166, 178–181,

184–185, 191, 193–195, 197–198,

200, 201, 207, 208, 212, 225, 231,

242–243, 246, 252, 254, 258, 276,

280, 292–293, 325, 327, 328, 331,

332, 419, 421, 422, 426, 428, 495,

534, 541, 643, 646

Doping, 2, 55, 76, 80, 94, 96, 98, 131,

171, 184, 200, 201, 213, 232, 242,

244, 253, 295, 328, 332, 342, 419,

420, 422, 423, 425, 427, 428, 646, 713

DOS. See Density of states

Double-wall nanotubes (DWNTs), 531

DPN. See Dip-pen nanolithography

Drain, 260–262, 266, 268, 272, 293, 294,

537, 676

current, 263, 265

voltage, 536

Drug-delivery, 6, 10, 141, 349, 379, 382,

390, 398, 405–407, 410, 413, 418,

459, 461, 466, 485, 486, 507, 529,

675, 712

DSC. See Differential scanning calorimetry

DU. See Depleted uranium

Dual-action brominated organophosphorus

ﬂame retardants, 444

Ductility, 16, 164, 184, 187, 189, 194, 196,

199, 202, 203, 211, 470

Index 723

Duplex, 202

stainless steels, 203

Duriron, 184

DUV. See Deep UV

DWNTs. See Double-wall nanotubes

Dye-sensitized photovoltaic cell, 337

Dyesensitized solar cells (DSC), 11, 25,

26, 310, 311, 338, 339, 346, 559,

654, 674

Dynamic mechanical (thermal) analysis

(DMA/DMTA), 505, 654

Dynamic SIMS, 638, 642

EBSD. See Electron backscattering

diffraction

ECDs. See Electrochromic devices

Edge dislocation, 86

EDS. See Energy-dispersive X-ray

spectroscopy

EELS. See Electron energy-loss

spectroscopy

Effective magnetic moment, 222

Effective nuclear charge, 16, 17, 44, 364,

481, 615

Efﬁciencies, 144–146, 252, 337–338

Efﬂorescence, 23

EF-TEM. See Energy-ﬁltered TEM

EG-Si. See Electronic-grade silicon

EHP. See Electron-hole pairs

E-k diagram, 113, 246, 249

EL. See Elastic limit

Elasomeric stamp, 313

Elastically, 82, 185, 199, 216, 591,

605–606, 610, 615, 636, 637

Elastic limit (EL), 199, 505

Elastic recoil detection analysis (ERDA),

636, 637

Elastic scattering, 73, 591–592, 610, 619,

620, 654

Elastomer, 2, 82, 313, 315, 351,

415–417

Electrochromic, 134–136, 418

Electrochromic devices (ECDs), 134, 135

Electrodeposition, 171, 173, 706, 707

Electrogalvanization, 171

Electroluminescence, 300, 323, 326, 675

Electromagnetic lenses, 592–593

Electrometallurgical, 163

Electron backscattering diffraction

(EBSD), 623

Electron compounds, 209

Electron energy-loss spectroscopy (EELS),

11, 612, 614–617, 632

Electron gun, 536, 593–594, 603, 627

Electron-hole pairs (EHP), 245, 323, 325,

326, 335, 337, 478

Electronic-grade silicon (EG-Si), 252, 717

Electron-loss near-edge structure (ELNES),

615–617, 632

Electron microscopy, 76, 264, 476, 588–629

Electron probe microanalyzer (EPMA), 608

Electrons, 10, 17, 172, 239, 358, 467, 584

Electron spectroscopy for chemical analysis

(ESCA), 629

Electron tunneling, 264, 595, 634

Electron velocity, 106

Electroreﬁning, 161

Elemental dot-mapping, 608, 611

ELNES. See Electron-loss near-edge

structure

Enantiotropic, 25

Endohedral fullerene(s), 493, 497

Energy-dispersive X-ray spectroscopy

(EDS), 11, 608–610, 612, 614, 617,

623–625, 627, 635

Energy-ﬁltered TEM (EF-TEM), 617

Environmental SEMs (ESEMs), 626, 627

epi, 273, 274

Episcopic light differential interference

contrast (DIC) microscopy, 586

Epitaxial growth, 184–185, 270

EPMA. See Electron probe microanalyzer

Epoxy, 219, 282, 283, 351–353, 358, 437,

444, 446, 448, 559–560, 600, 624, 673

ERDA. See Elastic recoil detection analysis

ESCA. See Electron spectroscopy for

chemical analysis

ESEMs. See Environmental SEMs

Etching, 6, 273, 274, 276, 281, 282, 288,

290–294, 316, 317, 472, 498, 501,

558, 588, 600, 625, 632, 643, 651,

683, 713–716

Eutectic, 178, 181–182, 552, 553, 706, 716

Eutectoid, 182, 183, 188, 190, 193

EUV. See Extreme UV

Evaporation, 13, 27, 117, 119, 120, 144,

296–298, 312, 313, 317, 439, 487,

489, 490, 498–502, 527, 545, 624,

627, 643, 645, 682, 687–688,

695–697, 709, 713

Evaporation system, 297, 489, 490

Everhart–Thornley detector, 620

724 Index

Ewald sphere, 73, 74, 603

EXAFS. See Extended X-ray absorption

ﬁne structure

EXAFS/ XAFS. See X-ray absorption

ﬁne structure

Exciton, 327, 328, 478, 479

Exciton Bohr radius (r

), 49, 478, 479,

486, 494

EXELFS. See Extended energy-loss

ﬁne structure

Exfoliation, 541, 559

Extended energy-loss ﬁne structure

(EXELFS), 615, 616

Extended X-ray absorption ﬁne

structure (EXAFS), 615, 632–633

Extractive metallurgy, 159

Extreme UV (EUV), 284–288, 313

Extrinsic semiconductors, 241–243

Fab. See Fabrication facility

Fabrication facility (Fab), 295

Face-centered cubic (Fcc), 33–41,

44–47, 63, 65, 77, 85–87, 111,

175, 178–181, 194, 196, 201,

206–208, 211, 212, 214, 215,

249, 277, 485, 521–522, 523, 524,

632, 716

Fcc. See Face-centered cubic

Feldspars, 89, 140, 157, 159, 251

Fermi-Dirac function, 106

Fermi function, 107, 241–242

Fermi level, 51–53, 55, 105–108,

205, 206, 241–243, 249, 262,

424–425, 484, 485, 561, 593

Ferrimagnetic, 224–225

Ferrite, 47, 48, 178–182, 187–190,

194–196, 201, 203, 221, 225

Ferrite stabilizers, 194

Ferritic, 196, 202, 203

Ferritic stainless steel, 202, 203

Ferroelectric, 102, 222

Ferromagnetic, 55, 216, 222–225,

430–433, 435, 436, 485

coupling, 222, 224, 432

ordering, 432, 435–436

Ferromagnets, 430–432

FET. See Field-effect transistor

Feynman, 468, 469, 609–610, 681

FIB. See Focused-ion beam

Fick’s Law, 406

Field-effect transistor (FET), 256–270, 321,

418, 536, 537, 560

Field emission, 535, 594–595, 603, 612,

629, 697

Field emitter(s), 535, 595

Figure of merit, ZT, 330–331, 334

Fineness, 206–207, 468

Flame retardants, 161, 362, 412, 439–444

Float-zone (FZ), 252–254

Flory, 376, 506

Flotation, 159–160, 205

Fluidized bed (CVD), 300, 550

Fluorescence, 96, 98, 131, 132, 224, 322,

324, 328, 477–478, 480, 536, 593,

603, 612, 623, 709

Fluorite, 44–46, 89, 159

Fluorite structure, 44, 46

Focused-ion beam (FIB), 312–313, 525,

600–601, 643

lithographies, 312–313, 525, 600–601

Folded growth, 531, 554

Formvar, 597–598

Fracture, 82, 83, 90–91, 142, 199–200, 233,

398, 448, 541

Fracturing, 89–92, 184, 197

Frank-Kasper phases, 209

Free Gibbs energy, 200

Freeradical addition polymerization,

359–360, 362, 514

Free volume theory, 439–440

Frenkel defect, 76, 79–80, 292–293

Fuel cell(s), 6, 9, 79–80, 122, 144–148, 335,

362, 517, 617, 671, 676

Fullerene(s), 2, 18, 461–463, 466, 485–497,

526, 532, 533, 542–546, 556–557,

653, 675

Fullerene road, 491

Fully depleted SOI, 265–266

Functionalization, 317, 406, 461–463, 465,

466, 483, 485–486, 541–544, 559, 560

Fused silica, 126–128, 130–131, 499

FZ. See Float-zone

GaAs. See Gallium arsenide

Gallium arsenide (GaAs), 44, 242, 243,

246–247, 273–274, 316, 321, 322, 324,

325, 337, 560, 714

Galvanized, 169, 171, 218

Gamma loop, 194, 195, 203

Gangue, 157, 159–160

Index 725

Gas-chromic, 136

Gaseous secondary electron detector

(GSED), 627, 628

Gate, 260–268, 293, 294, 537, 561

oxide, 260, 263–268, 296, 304

stack, 268

voltage, 261–263, 536

Gel, 114–121, 123, 136–138, 141, 356, 358,

376, 391, 401, 406, 412, 512, 655

Gel-permeation chromatography (GPC),

356, 655, 656, 674

Gemstone, 2, 6, 76, 78, 93–94, 96, 98–99

Generation(s), 6, 144, 173, 200, 226,

230–232, 239, 262, 264–266, 287, 304,

312–321, 323–324, 330, 335, 359, 364,

367, 376, 378, 379, 384, 385, 390, 399,

428, 448, 466, 472, 505–508, 515, 527,

535, 536, 539, 540, 606, 612, 619, 640,

645, 651, 676, 687, 697

Gettering, 252

Glass(es), 2, 14, 158, 240, 349, 468, 586

Glass-transition temperature (T

), 14, 351,

352, 380, 388, 391, 403, 439–440, 541

Glide plane(s), 61–65, 70, 603

GNRs. See Graphene nanoribbons

GPC. See Gel-permeation chromatography

Graft copolymers, 354, 406

Grain boundaries, 76, 80–82, 84, 91–92, 139,

182, 186, 201, 212, 215, 218, 623

Grain size, 80, 168–169, 197–198

hardening, 185–191

Graphene, 473, 531–533, 538, 556, 559–564,

677, 678

sheet, 473, 531–533, 538, 559–562

Graphene nanoribbons (GNRs),

562–564, 678

Graphitic, 18, 19, 182, 184, 296, 491,

493, 531, 537, 541, 545, 553, 554,

558, 590, 694

Graphitizer, 184–185

Green body, 139, 140

Green density, 176

Grubbs’ catalyst, 444–446, 448

GSED. See Gaseous secondary electron

detector

Gypsum, 89, 138, 144, 159

HAADF detector. See High-angle annular

dark-ﬁeld detector

HAADF-STEM, 610, 612, 613

Half-Heusler alloys, 209, 331

Hamada vector, 531

Hardening, 77, 84, 126, 136, 138,

144, 185–201, 203, 204, 208,

211–213, 215, 225, 232, 233,

315, 351–353, 701

Hardness, 2, 18, 44, 80, 88–90, 114,

126, 139, 144, 164, 171, 176, 180,

186–189, 193, 194, 196, 197, 202,

203, 205, 213, 232–233, 349, 355,

470, 471, 600

Hcp. See Hexagonal close-packing

HDPE. See High-density polyethylene

Hemiisotactic, 354

Hermann-Mauguin symbols, 59, 62

Heteroepitaxy, 270, 273, 559

Heterogeneous catalysis, 41, 46, 364–366,

517, 553, 617, 623

Hexagonal close-packing (Hcp), 33–37,

39–45, 47–49, 85, 87, 94, 175, 208,

209, 212, 524

Hexamethyl disilazane (HMDS), 282

High-angle annular dark-ﬁeld (HAADF)

detector, 610, 612, 614

High-density polyethylene (HDPE),

390, 392

High-k dielectric gate oxide, 264, 266

High-pressure conversion (HiPCO),

549–550, 558

High-spin complex, 44, 435–436

High-temperature superconductors (HTS),

50, 53–56, 497

HiPCO. See High-pressure conversion

HiPCO CVD, 550–551

HMDS. See Hexamethyl disilazane

Hole-repairing mechanism, 447, 496, 497

Holes, 40, 211, 241, 420, 459, 587

Hole-trapping, 328, 339, 340

Holey carbon TEM grid, 597, 598

Homoepitaxy, 252, 273, 326

Homogeneous catalysis, 366–372

Homopolymer, 352

Hooke’s law, 82

Hot rolling, 168–170

Hot-walled, 302, 303, 550–551

Hot-wire CVD (HWCVD), 303

HTS. See High-temperature

superconductors

€

uckel rule, 491

Hume-Rothery phases, 209

Hume-Rothery rules, 77–78, 178, 207–209

HWCVD. See Hot-wire CVD

726 Index

Hydrides, 45, 50, 136, 226–231, 305,

371–373

Hydrogels, 321, 405–410, 674

Hydrogen (H

)

bonding, 15, 21, 23, 356, 357

storage, 226–231, 515

Hydrolysis, 114–115, 117, 118, 141, 308,

369, 382, 385, 392–396, 406, 502,

511–512, 517–518, 526

Hydrometallurgy, 161–163

Hydroxyapatite, 142–144

Hyperbranched dendritic, 352, 506

Hyperbranched polymer(s), 375–377, 506,

518, 675

Hypereutectoid, 182, 183, 193

Hysteresis, 102, 215, 223, 433

IC. See Integrated circuit

Igneous, 157, 158

Immersion lithography, 288, 289

Incandescence, 98, 323

Inclusion, 25, 126, 135, 175, 442, 526

Incompressibility (bulk modulus), 213

Incremental nanotechnology, 473

Index of refraction, 21, 99, 132–134, 289,

587, 588

Indium tin oxide (ITO), 328

Inelastic scattering, 591, 592, 597, 606, 610,

614, 619, 637

Ingot, 252–254, 274, 295

Iniferters, 362, 363, 365

Initiation, 99, 120, 138, 176, 189, 194,

203, 214, 272, 276, 323, 351,

359–362, 364, 367, 376, 378,

394, 401, 448, 457, 491, 511, 514,

519, 549, 554, 555, 557, 558, 565,

698, 711

Inoculation, 184

INS. See Ion neutralization spectroscopy

Insulator, 104, 113, 119, 141, 209, 239,

243, 263, 265, 266, 272, 419, 420,

484, 487, 620, 687

Integrated circuit (IC), 2, 6, 101, 141,

255–321, 457, 546, 697

Interaction volume, 619, 620, 623

Interconnects, 122, 146, 255, 271, 294–296,

385, 418–419, 535

Intermetallic, 41, 43, 45, 172, 207–211, 228,

231, 497, 508, 527, 528

Intersoliton hopping, 423, 426

Interstitial, 15, 37–46, 48, 76, 78, 79, 88, 136,

146, 175, 179, 180, 182–184, 191–194,

196, 197, 200, 201, 209, 213, 215, 218,

225, 228, 247, 280, 332

defects, 247

dopant, 179, 194, 197, 201, 225

sites, 15, 37–46, 48, 78, 79, 146, 175, 180,

182–183, 200, 209, 228, 280, 332

Intrinsic semiconductors, 241, 243

Inverse spinel, 46–48

Inversion layer, 262

Ion-bombardment, 198, 293, 501, 596, 600,

634–643

Ionic bonding, 15, 16, 19, 23, 44, 126, 229

Ion imaging, 644

Ion implantation, 272, 292–295

Ion microprobe, 643

Ion microscopy, 643

Ion neutralization spectroscopy (INS), 634

IPR. See Isolated Pentagon Rule

Iron age, 2

Iron carbide, 176, 182, 183, 187, 189, 191,

192, 194, 195, 197, 200, 208, 545, 554

Iron-carbon phase diagram, 181

Isolated Pentagon Rule (IPR), 488, 489,

491, 493

Isomorphs, 25, 180

Isotactic, 354, 355, 364, 365, 368, 390

Isotropic, 34, 99, 290, 291, 331, 417, 418,

422, 702, 704, 705

etching, 290

ITO. See Indium tin oxide

Kaminsky catalyst, 369

Kaolinite, 140, 159

Karat, 77, 206, 207

Kinetics vs. thermodynamics, 13–14, 23,

267, 300, 523

Kirkendall effect, 516, 517

Kubo gap, 483, 484

LaB

, 593–595, 608

Lacey grids, 599

LACVD. See Laser-assisted CVD

LaMer growth model, 520

Lanthanum hexaboride, 594

Lapis lazuli, 99

Large-scale integrated circuits (LSI), 257

Index 727