Wiley, 2011, 563 p.
Bulk Growth of Mercury Cadmium Telluride (MCT).
Bulk Growth of CdZnTe/CdTe Crystals.
Properties of Cd(Zn)Te Relevant to Use as Substrates.
Substrates for the Epitaxial Growth of MCT.
Liquid Phase Epitaxy of MCT.
Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth.
MBE Growth of Mercury Cadmium Telluride.
Mechanical and Thermal Properties.
Optical Properties of MCT.
Diffusion in MCT.
Defects in HgCdTe – Fundamental.
Band Structure and Related Properties of HgCdTe.
Conductivity Type Conversion.
Extrinsic Doping.
Structure and Electrical Characteristics of Metal/MCT Interfaces.
MCT Superlattices for VLWIR Detectors and Focal Plane Arrays.
Dry Plasma Processing of Mercury Cadmium Telluride and Related II–VIs.
MCT Photoconductive Infrared Detectors.
HgCdTe Photovoltaic Infrared Detectors.
Nonequilibrium, Dual-Band and Emission Devices.
HgCdTe Electron Avalanche Photodiodes (EAPDs).
Room Temperature IR Photodetectors.
Bulk Growth of Mercury Cadmium Telluride (MCT).
Bulk Growth of CdZnTe/CdTe Crystals.
Properties of Cd(Zn)Te Relevant to Use as Substrates.
Substrates for the Epitaxial Growth of MCT.
Liquid Phase Epitaxy of MCT.
Metal-Organic Vapor Phase Epitaxy (MOVPE) Growth.
MBE Growth of Mercury Cadmium Telluride.
Mechanical and Thermal Properties.
Optical Properties of MCT.
Diffusion in MCT.
Defects in HgCdTe – Fundamental.
Band Structure and Related Properties of HgCdTe.
Conductivity Type Conversion.
Extrinsic Doping.
Structure and Electrical Characteristics of Metal/MCT Interfaces.
MCT Superlattices for VLWIR Detectors and Focal Plane Arrays.
Dry Plasma Processing of Mercury Cadmium Telluride and Related II–VIs.
MCT Photoconductive Infrared Detectors.
HgCdTe Photovoltaic Infrared Detectors.
Nonequilibrium, Dual-Band and Emission Devices.
HgCdTe Electron Avalanche Photodiodes (EAPDs).
Room Temperature IR Photodetectors.